|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.07 Ohm typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package
- STW65N80K5
- STMicroelectronics
-
1:
$15.21
-
164En existencias
|
N.º de artículo de Mouser
511-STW65N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.07 Ohm typ., 46 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
164En existencias
|
|
|
$15.21
|
|
|
$9.33
|
|
|
$9.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
800 V
|
46 A
|
80 mOhms
|
- 30 V, 30 V
|
4 V
|
92 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 1 Ohm 9A Zener MDmesh K5
- STW6N95K5
- STMicroelectronics
-
1:
$3.22
-
1,908En existencias
|
N.º de artículo de Mouser
511-STW6N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V 1 Ohm 9A Zener MDmesh K5
|
|
1,908En existencias
|
|
|
$3.22
|
|
|
$1.75
|
|
|
$1.43
|
|
|
$1.19
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
9 A
|
1.25 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
- STW70N60DM2
- STMicroelectronics
-
1:
$10.90
-
832En existencias
|
N.º de artículo de Mouser
511-STW70N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in a TO-247 package
|
|
832En existencias
|
|
|
$10.90
|
|
|
$6.51
|
|
|
$5.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
66 A
|
42 mOhms
|
- 25 V, 25 V
|
3 V
|
121 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in
- STW72N60DM2AG
- STMicroelectronics
-
1:
$8.53
-
372En existencias
|
N.º de artículo de Mouser
511-STW72N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 37 mOhm typ., 66 A MDmesh DM2 Power MOSFET in
|
|
372En existencias
|
|
|
$8.53
|
|
|
$5.00
|
|
|
$4.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
66 A
|
42 mOhms
|
- 25 V, 25 V
|
4 V
|
121 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
- STW7N90K5
- STMicroelectronics
-
1:
$3.53
-
1,397En existencias
|
N.º de artículo de Mouser
511-STW7N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.72 Ohm typ., 7 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
1,397En existencias
|
|
|
$3.53
|
|
|
$1.95
|
|
|
$1.59
|
|
|
$1.46
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
7 A
|
720 mOhms
|
- 30 V, 30 V
|
3 V
|
17.7 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package
- STW8N120K5
- STMicroelectronics
-
1:
$7.23
-
815En existencias
|
N.º de artículo de Mouser
511-STW8N120K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-247 package
|
|
815En existencias
|
|
|
$7.23
|
|
|
$4.22
|
|
|
$3.97
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
13.7 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 1500V HI-VOLT PWRMESH PWR MOSFET
- STW9N150
- STMicroelectronics
-
1:
$9.48
-
589En existencias
|
N.º de artículo de Mouser
511-STW9N150
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 1500V HI-VOLT PWRMESH PWR MOSFET
|
|
589En existencias
|
|
|
$9.48
|
|
|
$5.59
|
|
|
$4.91
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
1.5 kV
|
8 A
|
2.5 Ohms
|
- 30 V, 30 V
|
3 V
|
89.3 nC
|
- 55 C
|
+ 150 C
|
320 W
|
Enhancement
|
|
PowerMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 8 Amp Zener SuperMESH
- STW9NK90Z
- STMicroelectronics
-
1:
$4.88
-
964En existencias
|
N.º de artículo de Mouser
511-STW9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 8 Amp Zener SuperMESH
|
|
964En existencias
|
|
|
$4.88
|
|
|
$2.99
|
|
|
$2.48
|
|
|
$2.33
|
|
|
$2.27
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.3 Ohms
|
- 30 V, 30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long l
- STWA48N60DM2
- STMicroelectronics
-
1:
$9.76
-
385En existencias
|
N.º de artículo de Mouser
511-STWA48N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long l
|
|
385En existencias
|
|
|
$9.76
|
|
|
$7.15
|
|
|
$5.85
|
|
|
$4.96
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
40 A
|
65 mOhms
|
- 25 V, 25 V
|
3 V
|
70 nC
|
- 55 C
|
+ 150 C
|
300 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in
- STWA65N65DM2AG
- STMicroelectronics
-
1:
$10.05
-
447En existencias
|
N.º de artículo de Mouser
511-STWA65N65DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 42 mOhm typ., 60 A MDmesh DM2 Power MOSFET in
|
|
447En existencias
|
|
|
$10.05
|
|
|
$6.92
|
|
|
$5.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
60 A
|
50 mOhms
|
- 25 V, 25 V
|
3 V
|
120 nC
|
- 55 C
|
+ 150 C
|
446 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.014 Ohm Mdmesh M5 130A
- STY139N65M5
- STMicroelectronics
-
1:
$31.41
-
135En existencias
|
N.º de artículo de Mouser
511-STY139N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.014 Ohm Mdmesh M5 130A
|
|
135En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
650 V
|
130 A
|
17 mOhms
|
- 25 V, 25 V
|
3 V
|
363 nC
|
- 55 C
|
+ 150 C
|
625 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
- STY145N65M5
- STMicroelectronics
-
1:
$34.32
-
286En existencias
-
1,200Se espera el 27/7/2026
|
N.º de artículo de Mouser
511-STY145N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.012 Ohm 138 A MDmesh M5
|
|
286En existencias
1,200Se espera el 27/7/2026
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
650 V
|
138 A
|
15 mOhms
|
- 25 V, 25 V
|
4 V
|
414 nC
|
- 55 C
|
+ 150 C
|
625 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 60 Amp
- STY60NM60
- STMicroelectronics
-
1:
$24.08
-
461En existencias
|
N.º de artículo de Mouser
511-STY60NM60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 60 Amp
|
|
461En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
600 V
|
60 A
|
50 mOhms
|
- 30 V, 30 V
|
|
|
- 65 C
|
+ 150 C
|
560 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 20A OmniFET
- VNB20N07TR-E
- STMicroelectronics
-
1:
$4.13
-
2,970En existencias
|
N.º de artículo de Mouser
511-VNB20N07TR-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 20A OmniFET
|
|
2,970En existencias
|
|
|
$4.13
|
|
|
$2.72
|
|
|
$1.92
|
|
|
$1.73
|
|
|
$1.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
70 V
|
20 A
|
50 mOhms
|
|
3 V
|
60 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 5A OmniFET
- VND5N07TR-E
- STMicroelectronics
-
1:
$2.95
-
13,590En existencias
|
N.º de artículo de Mouser
511-VND5N07TR-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 5A OmniFET
|
|
13,590En existencias
|
|
|
$2.95
|
|
|
$1.92
|
|
|
$1.33
|
|
|
$1.10
|
|
|
$1.06
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
70 V
|
5 A
|
200 mOhms
|
|
3 V
|
18 nC
|
- 40 C
|
+ 150 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 42V 6A OmniFET
- VND7NV04TR-E
- STMicroelectronics
-
1:
$2.67
-
9,959En existencias
|
N.º de artículo de Mouser
511-VND7NV04TR-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 42V 6A OmniFET
|
|
9,959En existencias
|
|
|
$2.67
|
|
|
$1.71
|
|
|
$1.19
|
|
|
$0.958
|
|
|
$0.895
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
45 V
|
6 A
|
60 mOhms
|
|
2.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 35A OmniFET
- VNP35N07-E
- STMicroelectronics
-
1:
$5.39
-
4,946En existencias
|
N.º de artículo de Mouser
511-VNP35N07-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 70V 35A OmniFET
|
|
4,946En existencias
|
|
|
$5.39
|
|
|
$3.07
|
|
|
$2.81
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
70 V
|
35 A
|
28 mOhms
|
|
3 V
|
100 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
AEC-Q100
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STB20NM50FDT4
- STMicroelectronics
-
1:
$6.99
-
2,058En existencias
-
NRND
|
N.º de artículo de Mouser
511-STB20NM50FD
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
2,058En existencias
|
|
|
$6.99
|
|
|
$4.72
|
|
|
$3.51
|
|
|
$3.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
5 V
|
38 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
FDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
- STP11NM60ND
- STMicroelectronics
-
1:
$5.04
-
498En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
|
|
498En existencias
|
|
|
$5.04
|
|
|
$2.64
|
|
|
$2.29
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
450 mOhms
|
- 25 V, 25 V
|
3 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 120 Amp
- STP200NF03
- STMicroelectronics
-
1:
$3.02
-
936En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP200NF03
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 120 Amp
|
|
936En existencias
|
|
|
$3.02
|
|
|
$1.56
|
|
|
$1.40
|
|
|
$1.14
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
120 A
|
3.2 mOhms
|
- 20 V, 20 V
|
|
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200 Volt 10 Amp
- IRF630
- STMicroelectronics
-
1:
$1.64
-
1,715En existencias
|
N.º de artículo del Fabricante
IRF630
N.º de artículo de Mouser
511-IRF630
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200 Volt 10 Amp
|
|
1,715En existencias
|
|
|
$1.64
|
|
|
$1.03
|
|
|
$0.767
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.545
|
|
|
$0.50
|
|
|
$0.451
|
|
|
$0.437
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
200 V
|
9 A
|
400 mOhms
|
- 20 V, 20 V
|
2 V
|
31 nC
|
- 65 C
|
+ 150 C
|
75 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 120Amp
- STB120NF10T4
- STMicroelectronics
-
1:
$4.09
-
909En existencias
|
N.º de artículo de Mouser
511-STB120NF10
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100 Volt 120Amp
|
|
909En existencias
|
|
|
$4.09
|
|
|
$2.62
|
|
|
$2.00
|
|
|
$1.68
|
|
|
$1.43
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
110 A
|
10.5 mOhms
|
- 20 V, 20 V
|
2 V
|
172 nC
|
- 55 C
|
+ 175 C
|
312 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 16 Amp
- STB16NF06LT4
- STMicroelectronics
-
1:
$1.89
-
1,323En existencias
|
N.º de artículo de Mouser
511-STB16NF06L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 16 Amp
|
|
1,323En existencias
|
|
|
$1.89
|
|
|
$1.21
|
|
|
$0.812
|
|
|
$0.644
|
|
|
$0.589
|
|
|
$0.557
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
16 A
|
90 mOhms
|
- 20 V, 20 V
|
1 V
|
7.3 nC
|
- 55 C
|
+ 175 C
|
45 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 1500V 2.5A Pwr MOSFET
- STB30NF20
- STMicroelectronics
-
1:
$2.74
-
1,393En existencias
|
N.º de artículo de Mouser
511-STB30NF20
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 1500V 2.5A Pwr MOSFET
|
|
1,393En existencias
|
|
|
$2.74
|
|
|
$1.77
|
|
|
$1.25
|
|
|
$1.04
|
|
|
$0.904
|
|
|
$0.883
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
30 A
|
75 mOhms
|
- 20 V, 20 V
|
2 V
|
38 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 0.065 Ohm 30A STripFET 150W
- STB30NF20L
- STMicroelectronics
-
1:
$2.90
-
1,119En existencias
|
N.º de artículo de Mouser
511-STB30NF20L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 0.065 Ohm 30A STripFET 150W
|
|
1,119En existencias
|
|
|
$2.90
|
|
|
$1.88
|
|
|
$1.30
|
|
|
$1.07
|
|
|
$0.975
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
30 A
|
65 mOhms
|
- 20 V, 20 V
|
1 V
|
65 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
