|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STP24N60DM2
- STMicroelectronics
-
1:
$3.98
-
853En existencias
|
N.º de artículo de Mouser
511-STP24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
853En existencias
|
|
|
$3.98
|
|
|
$2.03
|
|
|
$1.80
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
- STP20NM60FD
- STMicroelectronics
-
1:
$7.51
-
5,313En existencias
|
N.º de artículo de Mouser
511-STP20NM60FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
|
|
5,313En existencias
|
|
|
$7.51
|
|
|
$4.10
|
|
|
$3.76
|
|
|
$3.65
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
290 mOhms
|
- 30 V, 30 V
|
3 V
|
54 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
- STB24N60DM2
- STMicroelectronics
-
1:
$3.74
-
1,418En existencias
|
N.º de artículo de Mouser
511-STB24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in D2PAK package
|
|
1,418En existencias
|
|
|
$3.74
|
|
|
$2.45
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
FDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STP20NM50FD
- STMicroelectronics
-
1:
$7.99
-
374En existencias
|
N.º de artículo de Mouser
511-STP20NM50FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
374En existencias
|
|
|
$7.99
|
|
|
$4.34
|
|
|
$3.99
|
|
|
$3.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STW20NM50FD
- STMicroelectronics
-
1:
$8.11
-
506En existencias
|
N.º de artículo de Mouser
511-STW20NM50FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
506En existencias
|
|
|
$8.11
|
|
|
$5.17
|
|
|
$4.47
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
53 nC
|
- 65 C
|
+ 150 C
|
214 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
- STW20NM60FD
- STMicroelectronics
-
1:
$7.21
-
830En existencias
|
N.º de artículo de Mouser
511-STW20NM60FD
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
|
|
830En existencias
|
|
|
$7.21
|
|
|
$4.16
|
|
|
$3.48
|
|
|
$3.42
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
290 mOhms
|
- 30 V, 30 V
|
3 V
|
37 nC
|
- 65 C
|
+ 150 C
|
214 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STB20NM50FDT4
- STMicroelectronics
-
1:
$6.99
-
2,058En existencias
-
NRND
|
N.º de artículo de Mouser
511-STB20NM50FD
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
2,058En existencias
|
|
|
$6.99
|
|
|
$4.72
|
|
|
$3.51
|
|
|
$3.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
5 V
|
38 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
FDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
- STP11NM60ND
- STMicroelectronics
-
1:
$5.04
-
497En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
|
|
497En existencias
|
|
|
$5.04
|
|
|
$2.64
|
|
|
$2.29
|
|
|
$2.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
450 mOhms
|
- 25 V, 25 V
|
3 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
- STW24N60DM2
- STMicroelectronics
-
1:
$4.36
-
485En existencias
|
N.º de artículo de Mouser
511-STW24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
|
|
485En existencias
|
|
|
$4.36
|
|
|
$2.43
|
|
|
$2.23
|
|
|
$1.75
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
200 mOhms
|
- 25 V, 25 V
|
4 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-0.37ohms FDMesh 10A
- STF11NM60ND
- STMicroelectronics
-
1:
$5.20
-
107En existencias
-
NRND
|
N.º de artículo de Mouser
511-STF11NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-0.37ohms FDMesh 10A
|
|
107En existencias
|
|
|
$5.20
|
|
|
$2.78
|
|
|
$2.49
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
450 mOhms
|
- 25 V, 25 V
|
4 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
FDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
- STD11NM60ND
- STMicroelectronics
-
1:
$4.57
-
Plazo de entrega no en existencias 14 Semanas
-
NRND
|
N.º de artículo de Mouser
511-STD11NM60ND
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600V, 10A FDMesh II
|
|
Plazo de entrega no en existencias 14 Semanas
|
|
|
$4.57
|
|
|
$3.04
|
|
|
$2.20
|
|
|
$2.12
|
|
|
$1.95
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
450 mOhms
|
- 25 V, 25 V
|
3 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
FDmesh
|
Reel, Cut Tape, MouseReel
|
|