ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes
ROHM Semiconductor AEC-Q101 SiC Schottky Barrier Diodes deliver breakdown voltages from 600V, far exceeding the upper limit for silicon SBDs. The AEC-Q101 Diodes utilize SiC, making them ideal for PFC circuits and inverters. Additionally, high-speed switching is enabled with ultra-small reverse recovery time. This minimizes both reverse recovery charge and switching loss, contributing to end-product miniaturization. ROHM AEC-Q101 SiC Schottky Barrier Diodes offer a reverse voltage range of 650V to 1200V, a continuous forward current range of 1.2µA to 260µA, and a total power dissipation range between 48W to 280W. The devices are available in TO-247 and TO-263 packages, with a max temperature of +175°C.Features
- AEC-Q100 qualified for automotive applications
- Reduced temperature dependence
- High-speed switching
- Low switching loss
- Shorter recovery time
Applications
- Automotive
- Switch-mode power supplies
- Solar inverters
- UPS
- EV chargers
Videos
SBD Voltage Chart
View Results ( 10 ) Page
| N.º de artículo | Hoja de datos | If - Corriente directa | Ifsm - Sobrecorriente en sentido directo | Ir - Corriente inversa | Paquete / Cubierta |
|---|---|---|---|---|---|
| SCS208AJHRTLL | ![]() |
8 A | 30 A | 160 uA | TO-263AB-3 |
| SCS220AE2HRC11 | ![]() |
20 A | 76 A | 200 uA | TO-247N-3 |
| SCS240AE2HRC11 | ![]() |
40 A | 130 A | 400 uA | TO-247N-3 |
| SCS210KE2HRC11 | ![]() |
10 A | 45 A | 100 uA | TO-247N-3 |
| SCS206AJHRTLL | ![]() |
6 A | 23 A | 120 uA | TO-263AB-3 |
| SCS210AJHRTLL | ![]() |
10 A | 38 A | 200 uA | TO-263AB-3 |
| SCS215AJHRTLL | ![]() |
15 A | 52 A | 300 uA | TO-263AB-3 |
| SCS212AJHRTLL | ![]() |
12 A | 43 A | 240 uA | TO-263AB-3 |
| SCS220AJHRTLL | ![]() |
20 A | 68 A | 400 uA | TO-263AB-3 |
| SCS220KE2HRC11 | ![]() |
20 A | 84 A | 200 uA | TO-247N-3 |
Publicado: 2019-03-22
| Actualizado: 2024-01-24

