Nuevos Transistores de efecto de campo de unión (JFET) y radiofrecuencia (RF)
CEL Low Noise FETs and ICs exhibit low noise figures and high associated gains, delivering exceptional noise figure performance at frequencies past 20GHz. These products are available in both ceramic and plastic packages that uphold the renowned Japanese manufacturing quality and reliability. The low-noise FETs and amplifier ICs offer better RF performance than other pHEMTs. Target markets for the devices include Digital Broadcast Systems (DBS), Low Noise Block (LNB) downconverters, and Very Small Aperture Terminal Satellite (VSAT) communication systems. Other typical applications include microwave communication systems, motion detectors, traffic monitoring, collision avoidance, and presence detections.
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CEL Low Noise FETs & ICsDeliver exceptional noise performance even beyond 20GHz with high associated gains.7/9/2023
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Qorvo pHEMT GaAs discreto de 1600 µm QPD2160DOfrece 32.5 dBm de potencia de salida a P1dB, ganancia de 10.4 dB y eficiencia de potencia agregada del 63 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 1200 µm QPD2120DOfrece 31 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 57 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 800 µm QPD2080DOfrece 29.5 dBm de potencia de salida a P1dB, ganancia de 11.5 dB y eficiencia de potencia agregada del 56 % a 1 dB.4/19/2022 -
Qorvo pHEMT GaAs discreto de 600 µm QPD2060DOfrece 28 dBm de potencia de salida a P1dB, ganancia de 12 dB y eficiencia de potencia agregada del 55 % a 1 dB.4/19/2022 -
Qorvo QPD2040D 400um Discrete GaAs pHEMT DieDesigned using Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022 -
Qorvo QPD2018D 180um Discrete GaAs pHEMT DieUtilizes Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022 -
Qorvo QPD2025D 250um Discrete GaAs pHEMT DieDeveloped using Qorvo's proven standard 0.25um power pHEMT production process.2/14/2022