|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN70R2K0P7SATMA1
- Infineon Technologies
-
1:
$0.92
-
1,465En existencias
-
12,000Se espera el 22/10/2026
|
N.º de artículo de Mouser
726-IPN70R2K0P7SATM1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,465En existencias
12,000Se espera el 22/10/2026
|
|
|
$0.92
|
|
|
$0.42
|
|
|
$0.37
|
|
|
$0.284
|
|
|
$0.22
|
|
|
Ver
|
|
|
$0.21
|
|
|
$0.191
|
|
|
$0.187
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
700 V
|
3 A
|
1.64 Ohms
|
16 V
|
2.5 V
|
3.8 nC
|
- 40 C
|
+ 150 C
|
6 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 13A TO220-3 CoolMOS CE
- IPP50R280CE
- Infineon Technologies
-
1:
$1.96
-
98En existencias
-
500Se espera el 12/11/2026
|
N.º de artículo de Mouser
726-IPP50R280CE
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 13A TO220-3 CoolMOS CE
|
|
98En existencias
500Se espera el 12/11/2026
|
|
|
$1.96
|
|
|
$1.11
|
|
|
$0.818
|
|
|
$0.629
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
13 A
|
280 mOhms
|
20 V
|
2.5 V
|
32.6 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPN60R1K5CEATMA1
- Infineon Technologies
-
1:
$0.84
-
1,737En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPN60R1K5CEATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
1,737En existencias
|
|
|
$0.84
|
|
|
$0.384
|
|
|
$0.339
|
|
|
$0.259
|
|
|
$0.257
|
|
|
$0.199
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
SOT-223-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
3.51 Ohms
|
20 V
|
2.5 V
|
9.4 nC
|
- 40 C
|
+ 150 C
|
5 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
- SPP20N60C3XKSA1
- Infineon Technologies
-
1:
$4.65
-
818En existencias
-
NRND
|
N.º de artículo de Mouser
726-SPP20N60C3XKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 20.7A TO220-3
|
|
818En existencias
|
|
|
$4.65
|
|
|
$2.39
|
|
|
$2.17
|
|
|
$1.78
|
|
|
$1.75
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.7 A
|
190 mOhms
|
20 V
|
2.1 V
|
87 nC
|
- 55 C
|
+ 150 C
|
208 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPD90R1K2C3ATMA2
- Infineon Technologies
-
1:
$2.36
-
2,500Se espera el 8/7/2027
-
NRND
|
N.º de artículo de Mouser
726-IPD90R1K2C3ATMA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
2,500Se espera el 8/7/2027
|
|
|
$2.36
|
|
|
$1.15
|
|
|
$1.03
|
|
|
$0.817
|
|
|
$0.773
|
|
|
$0.694
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
900 V
|
5.1 A
|
1.2 Ohms
|
20 V
|
3 V
|
28 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6XKSA1
- Infineon Technologies
-
1:
$3.85
-
990Se espera el 29/10/2026
|
N.º de artículo de Mouser
726-IPA60R160P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
990Se espera el 29/10/2026
|
|
|
$3.85
|
|
|
$1.95
|
|
|
$1.76
|
|
|
$1.43
|
|
|
$1.35
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
$2.81
-
1,000Se espera el 8/9/2026
|
N.º de artículo de Mouser
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
1,000Se espera el 8/9/2026
|
|
|
$2.81
|
|
|
$1.38
|
|
|
$1.24
|
|
|
$0.997
|
|
|
Ver
|
|
|
$0.916
|
|
|
$0.90
|
|
|
$0.883
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPA70R360P7SXKSA1
- Infineon Technologies
-
1:
$2.11
-
2,500Se espera el 22/10/2026
|
N.º de artículo de Mouser
726-IPA70R360P7XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,500Se espera el 22/10/2026
|
|
|
$2.11
|
|
|
$1.33
|
|
|
$0.871
|
|
|
$0.69
|
|
|
$0.651
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
700 V
|
12.5 A
|
300 mOhms
|
16 V
|
2.5 V
|
16.4 nC
|
- 40 C
|
+ 150 C
|
26.5 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
- IPD60R650CEAUMA1
- Infineon Technologies
-
1:
$1.43
-
2,462Se espera el 28/9/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD60R650CEAUMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER
|
|
2,462Se espera el 28/9/2026
|
|
|
$1.43
|
|
|
$0.669
|
|
|
$0.594
|
|
|
$0.462
|
|
|
$0.422
|
|
|
$0.353
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
9.9 A
|
540 mOhms
|
20 V
|
2.5 V
|
20.5 nC
|
- 40 C
|
+ 150 C
|
82 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V TO-220FP-3
- IPA65R650CEXKSA1
- Infineon Technologies
-
1:
$1.85
-
Plazo de entrega 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPA65R650CEXKSA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V TO-220FP-3
|
|
Plazo de entrega 8 Semanas
|
|
|
$1.85
|
|
|
$0.88
|
|
|
$0.683
|
|
|
$0.605
|
|
|
Ver
|
|
|
$0.537
|
|
|
$0.534
|
|
|
$0.519
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
10.1 A
|
650 mOhms
|
20 V
|
3 V
|
23 nC
|
- 40 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPA60R190P6XKSA1
- Infineon Technologies
-
500:
$1.17
-
Plazo de entrega no en existencias 17 Semanas
|
N.º de artículo de Mouser
726-IPA60R190P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
Plazo de entrega no en existencias 17 Semanas
|
|
|
$1.17
|
|
|
$1.13
|
|
|
$1.07
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
|
|
|
|
|
|
|
|
|
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPP90R1K2C3XKSA2
- Infineon Technologies
-
1:
$2.74
-
Plazo de entrega no en existencias 13 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPP90R1K2C3XKSA2
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
Plazo de entrega no en existencias 13 Semanas
|
|
|
$2.74
|
|
|
$1.76
|
|
|
$1.20
|
|
|
$0.874
|
|
|
Ver
|
|
|
$0.85
|
|
|
$0.827
|
|
|
$0.807
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
5.1 A
|
1.2 Ohms
|
20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|