STW24N60DM2

STMicroelectronics
511-STW24N60DM2
STW24N60DM2

Mfr.:

Description:
MOSFETs N-Ch 600V 0.175 Ohm typ. 18A MDmesh DM2
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Datasheet:
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Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
Through Hole
TO-247-3
N-Channel
1 Channel
600 V
18 A
200 mOhms
- 25 V, 25 V
4 V
29 nC
- 55 C
+ 150 C
150 W
Enhancement
FDmesh
Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 15 ns
Product Type: MOSFETs
Rise Time: 8.7 ns
Series: STW24N60DM2
Factory Pack Quantity: 600
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 6 g
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Attributes selected: 0

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
Singapore
Assembly Country of Origin:
Singapore
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low RDS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.

MDmesh™ DM2 Power MOSFETs

STMicroelectronics MDmesh™ DM2 Power MOSFETs are silicon-based MOSFETs with a fast recovery intrinsic diode optimized for ZVS phase-shift bridge topologies. STMicroelectronics MDmesh DM2 MOSFETS feature a very low recovery charge and time (Qrr, trr) and shows 20% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40V/ns) ensures improved system reliability.

In Stock: 325

Stock:
325
Can Ship Immediately
On Order:
600
Expected 2/26/2027
Factory Lead-Time:
26
Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$4.68 $4.68
$2.35 $23.50
$2.14 $214.00
$1.80 $1,080.00
$1.79 $2,148.00
$1.77 $9,558.00

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