CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs

Infineon Technologies CoolSiC™ Automotive 1200V G1 SiC Trench MOSFETs offer increased power density, higher efficiency, and improved reliability. The granular portfolio features 1200V SiC MOSFETs in TO-247-3pin, TO-247-4pin, and D2PAK-7pin packages with an RDS(on) ranging from 8.7mΩ to 160mΩ, and ID at +25°C, maximum of 17A to 205A. High power density, superior efficiency, bi-directional charging capabilities, and significant reductions in system costs make the Infineon Technologies 1200V Automotive CoolSiC™ MOSFET Modules an ideal choice for onboard charger and DC-DC applications. The TO- and SMD components also come with Kelvin-source pins for optimized switching performance.

Resultados: 29
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 799En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 7 V, + 23 V 5.7 V 31 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 274En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 35 mOhms - 7 V, + 23 V 4.5 V 59 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 192En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 33 A 80 mOhms - 7 V, + 20 V 5.7 V 28 nC - 55 C + 175 C 150 mW Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 1,356En existencias
Min.: 1
Mult.: 1
Carrete: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 27 A 80 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 2,534En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 116 A 25 mOhms - 10 V, + 25 V 5.1 V 82 nC - 55 C + 175 C 577 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 3,473En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 78 A 38 mOhms - 10 V, + 25 V 5.1 V 57 nC - 55 C + 175 C 417 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC Tailored to address OBC/DC-DC applications for 800V Automotive architecture 2,670En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 44 A 75 mOhms - 10 V, + 25 V 5.1 V 32 nC - 55 C + 175 C 259 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC CoolSiC Automotive MOSFET 1200 V 1,974En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 61 A 50 mOhms - 10 V, + 25 V 5.1 V 43 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 805En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 24 A 150 mOhms - 10 V, + 25 V 5.1 V 18 nC - 55 C + 175 C 161 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 632En existencias
960Se espera el 2/4/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 202 A 8.7 mOhms - 5 V, + 23 V 5.1 V 178 nC - 55 C + 175 C 750 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC Tailored to address OBC/DC-DC applications for 800V Automotive architecture 178En existencias
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 34 A 100 mOhms - 10 V, + 25 V 5.1 V 24 nC - 55 C + 175 C 211 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 169En existencias
1,500Se espera el 23/3/2026
Min.: 1
Mult.: 1
Carrete: 750

SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 18.6 A 200 mOhms - 10 V, + 25 V 5.1 V 14 nC - 55 C + 175 C 125 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 829En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 52 A 59 mOhms - 7 V, + 20 V 5.7 V 57 nC - 55 C + 175 C 228 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 393En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 19 mOhms - 5 V, + 23 V 5.1 V 82 nC - 55 C + 175 C 429 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 188En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 30 mOhms - 5 V, + 23 V 5.1 V 57 nC - 55 C + 175 C 326 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 276En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 100 A 19 mOhms - 5 V, + 23 V 5.1 V 82 nC - 55 C + 175 C 429 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 924En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 23 V 5.1 V 43 nC - 55 C + 175 C 268 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 151En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 60 mOhms - 5 V, + 23 V 5.1 V 32 nC - 55 C + 175 C 197 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 153En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 22 A 117 mOhms - 5 V, + 23 V 5.1 V 18 nC - 55 C + 175 C 133 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 80mohm 110En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 5 V, + 23 V 5.1 V 24 nC - 55 C + 175 C 169 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE 3En existencias
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17 A 160 mOhms - 5 V, + 23 V 5.1 V 14 nC - 55 C + 175 C 109 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE
844Se espera el 28/5/2026
Min.: 1
Mult.: 1
Carrete: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 48 A 40 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE
480Se espera el 30/4/2026
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 55 A 40 mOhms - 5 V, + 23 V 5.1 V 43 nC - 55 C + 175 C 268 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE Plazo de entrega no en existencias 26 Semanas
Min.: 1
Mult.: 1
Carrete: 1,000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 187 A 9 mOhms - 20 V, + 20 V 4.5 V - 55 C + 175 C 714 W Enhancement CoolSiC
Infineon Technologies MOSFETs de SiC SIC_DISCRETE Plazo de entrega no en existencias 26 Semanas
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 31 A 80 mOhms - 5 V, + 23 V 5.1 V 24 nC - 55 C + 175 C 169 W Enhancement CoolSiC