|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT026N10N5ATMA1
- Infineon Technologies
-
1:
$4.26
-
28,963En existencias
|
N.º de artículo de Mouser
726-IPT026N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
28,963En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.81
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
202 A
|
2.6 mOhms
|
- 20 V, 20 V
|
3.8 V
|
96 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT022N10NF2SATMA1
- Infineon Technologies
-
1:
$3.46
-
1,667En existencias
|
N.º de artículo de Mouser
726-IPT022N10NF2SATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,667En existencias
|
|
|
$3.46
|
|
|
$2.26
|
|
|
$1.58
|
|
|
$1.37
|
|
|
$1.28
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
:
1,800
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
236 A
|
2.25 mOhms
|
- 20 V, 20 V
|
2.2 V
|
103 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R105CFD7XTMA1
- Infineon Technologies
-
1:
$4.31
-
1,354En existencias
|
N.º de artículo de Mouser
726-IPT60R105CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,354En existencias
|
|
|
$4.31
|
|
|
$2.88
|
|
|
$2.03
|
|
|
$1.87
|
|
|
$1.74
|
|
|
$1.74
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
24 A
|
105 mOhms
|
- 20 V, 20 V
|
4 V
|
36 nC
|
- 55 C
|
+ 150 C
|
140 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
- IPT019N08N5ATMA1
- Infineon Technologies
-
1:
$4.76
-
2,636En existencias
|
N.º de artículo de Mouser
726-IPT019N08N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET > 60-80V
|
|
2,636En existencias
|
|
|
$4.76
|
|
|
$3.16
|
|
|
$2.24
|
|
|
$2.10
|
|
|
$1.96
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
247 A
|
1.9 mOhms
|
- 20 V, 20 V
|
3.8 V
|
101 nC
|
- 55 C
|
+ 175 C
|
231 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT020N10N3ATMA1
- Infineon Technologies
-
1:
$5.62
-
1,507En existencias
|
N.º de artículo de Mouser
726-IPT020N10N3ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,507En existencias
|
|
|
$5.62
|
|
|
$3.67
|
|
|
$2.67
|
|
|
$2.31
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
156 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R080G7XTMA1
- Infineon Technologies
-
1:
$7.12
-
1,800En existencias
|
N.º de artículo de Mouser
726-IPT60R080G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,800En existencias
|
|
|
$7.12
|
|
|
$4.73
|
|
|
$3.83
|
|
|
$3.41
|
|
|
$3.01
|
|
|
$3.01
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
29 A
|
80 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
167 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT200N08S5N023ATMA1
- Infineon Technologies
-
1:
$4.21
-
6,045En existencias
|
N.º de artículo de Mouser
726-IAUT200N08S5N023
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,045En existencias
|
|
|
$4.21
|
|
|
$2.75
|
|
|
$2.05
|
|
|
$1.68
|
|
|
$1.67
|
|
|
$1.56
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
200 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.2 V
|
110 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT012N06NATMA1
- Infineon Technologies
-
1:
$4.87
-
1,127En existencias
|
N.º de artículo de Mouser
726-IPT012N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
1,127En existencias
|
|
|
$4.87
|
|
|
$3.23
|
|
|
$2.30
|
|
|
$2.16
|
|
|
$2.04
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
60 V
|
313 A
|
1.2 mOhms
|
- 20 V, 20 V
|
2.1 V
|
106 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R075CFD7XTMA1
- Infineon Technologies
-
1:
$7.20
-
2,000En existencias
|
N.º de artículo de Mouser
726-IPT60R075CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,000En existencias
|
|
|
$7.20
|
|
|
$4.78
|
|
|
$3.87
|
|
|
$3.44
|
|
|
$3.05
|
|
|
$3.05
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
33 A
|
75 mOhms
|
- 20 V, 20 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IAUT150N10S5N035ATMA1
- Infineon Technologies
-
1:
$3.74
-
6,839En existencias
|
N.º de artículo de Mouser
726-IAUT150N10S5N035
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
6,839En existencias
|
|
|
$3.74
|
|
|
$2.32
|
|
|
$1.80
|
|
|
$1.58
|
|
|
$1.51
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
150 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
67 nC
|
- 55 C
|
+ 175 C
|
166 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R055CFD7XTMA1
- Infineon Technologies
-
1:
$6.15
-
2,523En existencias
|
N.º de artículo de Mouser
726-IPT60R055CFD7XTM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
2,523En existencias
|
|
|
$6.15
|
|
|
$4.38
|
|
|
$3.19
|
|
|
$3.18
|
|
|
$3.08
|
|
|
$2.98
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
44 A
|
55 mOhms
|
- 20 V, 20 V
|
4 V
|
67 nC
|
- 55 C
|
+ 150 C
|
236 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
- IPT60R102G7XTMA1
- Infineon Technologies
-
1:
$5.80
-
1,603En existencias
|
N.º de artículo de Mouser
726-IPT60R102G7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER NEW
|
|
1,603En existencias
|
|
|
$5.80
|
|
|
$3.87
|
|
|
$2.77
|
|
|
$2.41
|
|
|
$2.25
|
|
|
$2.25
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
23 A
|
88 mOhms
|
- 20 V, 20 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
141 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPT020N10N3
- Infineon Technologies
-
1:
$5.11
-
1,993En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPT020N10N3
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
1,993En existencias
|
|
|
$5.11
|
|
|
$3.40
|
|
|
$2.75
|
|
|
$2.44
|
|
|
$2.37
|
|
|
$2.16
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
156 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 650V FRFET HF 82MOHM KELVIN SENSE TOLL
- NTBL082N65S3HF
- onsemi
-
1:
$6.00
-
1,688En existencias
|
N.º de artículo de Mouser
863-NTBL082N65S3HF
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SF3 650V FRFET HF 82MOHM KELVIN SENSE TOLL
|
|
1,688En existencias
|
|
|
$6.00
|
|
|
$5.24
|
|
|
$4.94
|
|
|
$4.93
|
|
|
$4.93
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
650 V
|
40 A
|
82 mOhms
|
- 30 V, 30 V
|
5 V
|
79 nC
|
- 55 C
|
+ 150 C
|
313 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPLU300N04S41R1XTMA1
- Infineon Technologies
-
1:
$4.81
-
1,675En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPLU300N04S41R1X
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,675En existencias
|
|
|
$4.81
|
|
|
$3.19
|
|
|
$2.26
|
|
|
$2.01
|
|
|
$1.95
|
|
|
$1.88
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
40 V
|
300 A
|
1.15 mOhms
|
- 20 V, 20 V
|
3 V
|
151 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPLU250N04S41R7XTMA1
- Infineon Technologies
-
1:
$3.75
-
1,069En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPLU250N04S41R7X
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
1,069En existencias
|
|
|
$3.75
|
|
|
$2.47
|
|
|
$1.75
|
|
|
$1.54
|
|
|
$1.42
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
40 V
|
250 A
|
1.7 mOhms
|
- 20 V, 20 V
|
3 V
|
100 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET, TOLL, 100V, 280A, 175C, N
- DI280N10TL
- Diotec Semiconductor
-
1:
$4.34
-
4,284En existencias
|
N.º de artículo de Mouser
637-DI280N10TL
|
Diotec Semiconductor
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET, TOLL, 100V, 280A, 175C, N
|
|
4,284En existencias
|
|
|
$4.34
|
|
|
$2.89
|
|
|
$2.11
|
|
|
$1.93
|
|
|
$1.58
|
|
|
$1.58
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
280 A
|
2 mOhms
|
- 20 V, 20 V
|
2.3 V
|
122 nC
|
- 55 C
|
+ 175 C
|
425 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
- IAUT165N08S5N029ATMA2
- Infineon Technologies
-
1:
$3.74
-
962En existencias
|
N.º de artículo de Mouser
726-IAUT165N08S5N029
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V,120V(
|
|
962En existencias
|
|
|
$3.74
|
|
|
$2.46
|
|
|
$1.72
|
|
|
$1.52
|
|
|
$1.42
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
165 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPT60R040S7XTMA1
- Infineon Technologies
-
1:
$9.02
-
1,485En existencias
|
N.º de artículo de Mouser
726-IPT60R040S7XTMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,485En existencias
|
|
|
$9.02
|
|
|
$6.37
|
|
|
$4.86
|
|
|
$4.73
|
|
|
$4.42
|
|
|
$4.42
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
40 mOhms
|
- 20 V, 20 V
|
4.5 V
|
83 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
- IMT44R011M2HXTMA2
- Infineon Technologies
-
1:
$16.47
-
1,362En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IMT44R011M2HXTMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
|
|
1,362En existencias
|
|
|
$16.47
|
|
|
$11.64
|
|
|
$10.38
|
|
|
$10.37
|
|
|
$9.69
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
SiC
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
440 V
|
144 A
|
14.4 mOhms
|
- 7 V, 23 V
|
4.5 V
|
85 nC
|
- 55 C
|
+ 175 C
|
429 W
|
Enhancement
|
|
CoolSiC
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
- IMT44R015M2HXTMA2
- Infineon Technologies
-
1:
$13.20
-
1,600En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IMT44R015M2HXTMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
|
|
1,600En existencias
|
|
|
$13.20
|
|
|
$9.21
|
|
|
$7.65
|
|
|
$7.50
|
|
|
$7.14
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
SiC
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
440 V
|
111 A
|
19.1 mOhms
|
- 7 V, 23 V
|
4.5 V
|
62 nC
|
- 55 C
|
+ 175 C
|
341 W
|
Enhancement
|
|
CoolSiC
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
- IMT44R025M2HXTMA2
- Infineon Technologies
-
1:
$8.97
-
1,588En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
726-IMT44R025M2HXTMA
Nuevo producto
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) SILICON CARBIDE MOSFET
|
|
1,588En existencias
|
|
|
$8.97
|
|
|
$6.62
|
|
|
$5.39
|
|
|
$5.37
|
|
|
$5.32
|
|
|
$5.01
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
SiC
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
440 V
|
68 A
|
32.1 mOhms
|
- 7 V, 23 V
|
4.5 V
|
36 nC
|
- 55 C
|
+ 175 C
|
214 W
|
|
|
CoolSiC
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
- IPT029N08N5ATMA1
- Infineon Technologies
-
1:
$4.91
-
2,157En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPT029N08N5ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
|
|
2,157En existencias
|
|
|
$4.91
|
|
|
$3.26
|
|
|
$2.34
|
|
|
$2.20
|
|
|
$2.06
|
|
|
$2.04
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
169 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPT017N12NM6ATMA1
- Infineon Technologies
-
1:
$6.04
-
6,272En existencias
|
N.º de artículo de Mouser
726-IPT017N12NM6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
6,272En existencias
|
|
|
$6.04
|
|
|
$4.08
|
|
|
$2.94
|
|
|
$2.92
|
|
|
$2.87
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
120 V
|
331 A
|
1.7 mOhms
|
- 20 V, 20 V
|
2.6 V
|
113 nC
|
- 55 C
|
+ 175 C
|
395 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >150 - 400V
- IPT067N20NM6ATMA1
- Infineon Technologies
-
1:
$8.17
-
5,381En existencias
-
2,000Se espera el 11/6/2026
|
N.º de artículo de Mouser
726-IPT067N20NM6ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >150 - 400V
|
|
5,381En existencias
2,000Se espera el 11/6/2026
|
|
|
$8.17
|
|
|
$5.74
|
|
|
$4.41
|
|
|
$4.33
|
|
|
$4.17
|
|
|
$4.04
|
|
Min.: 1
Mult.: 1
:
2,000
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
200 V
|
137 A
|
6.7 mOhms
|
- 20 V, 20 V
|
3.7 V
|
71 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|