|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 80 V 3.5 mOhm typ 90 A
- STP140N8F7
- STMicroelectronics
-
1:
$3.07
-
329En existencias
-
1,000Se espera el 15/6/2026
|
N.º de artículo de Mouser
511-STP140N8F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 80 V 3.5 mOhm typ 90 A
|
|
329En existencias
1,000Se espera el 15/6/2026
|
|
|
$3.07
|
|
|
$1.53
|
|
|
$1.49
|
|
|
$1.12
|
|
|
$1.09
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
80 V
|
90 A
|
4.3 mOhms
|
- 20 V, 20 V
|
4.5 V
|
96 nC
|
- 55 C
|
+ 175 C
|
200 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package
- STP14N80K5
- STMicroelectronics
-
1:
$4.32
-
89En existencias
|
N.º de artículo de Mouser
511-STP14N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
89En existencias
|
|
|
$4.32
|
|
|
$2.84
|
|
|
$2.13
|
|
|
$1.89
|
|
|
$1.67
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
445 mOhms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 packa
- STP160N3LL
- STMicroelectronics
-
1:
$1.89
-
678En existencias
|
N.º de artículo de Mouser
511-STP160N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2.5 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 packa
|
|
678En existencias
|
|
|
$1.89
|
|
|
$0.978
|
|
|
$0.81
|
|
|
$0.756
|
|
|
Ver
|
|
|
$0.493
|
|
|
$0.465
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
120 A
|
3.2 mOhms
|
- 20 V, 20 V
|
2.5 V
|
42 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 12 Amp
- STP16N65M5
- STMicroelectronics
-
1:
$3.83
-
376En existencias
|
N.º de artículo de Mouser
511-STP16N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 12 Amp
|
|
376En existencias
|
|
|
$3.83
|
|
|
$1.95
|
|
|
$1.76
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
299 mOhms
|
- 25 V, 25 V
|
3 V
|
31 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh V
- STP18N65M5
- STMicroelectronics
-
1:
$3.79
-
657En existencias
|
N.º de artículo de Mouser
511-STP18N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.198 Ohm 15 A MDmesh V
|
|
657En existencias
|
|
|
$3.79
|
|
|
$1.99
|
|
|
$1.80
|
|
|
$1.48
|
|
|
$1.37
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
9.4 A
|
220 mOhms
|
- 25 V, 25 V
|
3 V
|
31 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.27 ohm 13A MDmesh
- STP18NM60N
- STMicroelectronics
-
1:
$3.39
-
913En existencias
|
N.º de artículo de Mouser
511-STP18NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.27 ohm 13A MDmesh
|
|
913En existencias
|
|
|
$3.39
|
|
|
$1.71
|
|
|
$1.54
|
|
|
$1.26
|
|
|
$1.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
260 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
- STP200N3LL
- STMicroelectronics
-
1:
$2.01
-
836En existencias
-
2,000Se espera el 24/3/2026
|
N.º de artículo de Mouser
511-STP200N3LL
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 30 V, 2 mOhm typ., 120 A, STripFET H6 Power MOSFET in a TO-220 package
|
|
836En existencias
2,000Se espera el 24/3/2026
|
|
|
$2.01
|
|
|
$1.12
|
|
|
$0.856
|
|
|
$0.825
|
|
|
Ver
|
|
|
$0.758
|
|
|
$0.549
|
|
|
$0.511
|
|
|
$0.506
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
30 V
|
120 A
|
2.15 mOhms
|
- 20 V, 20 V
|
1 V
|
53 nC
|
- 55 C
|
+ 175 C
|
176.5 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
- STP20NM50
- STMicroelectronics
-
1:
$6.39
-
149En existencias
-
1,000Se espera el 13/4/2026
|
N.º de artículo de Mouser
511-STP20NM50
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 20 Amp
|
|
149En existencias
1,000Se espera el 13/4/2026
|
|
|
$6.39
|
|
|
$3.52
|
|
|
$3.22
|
|
|
$3.04
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
20 A
|
250 mOhms
|
- 30 V, 30 V
|
3 V
|
56 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
- STP23NM50N
- STMicroelectronics
-
1:
$5.93
-
212En existencias
|
N.º de artículo de Mouser
511-STP23NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.162 Ohm MDmesh II 17A Switch
|
|
212En existencias
|
|
|
$5.93
|
|
|
$3.68
|
|
|
$3.26
|
|
|
$2.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
17 A
|
162 mOhms
|
- 25 V, 25 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
- STP25N60M2-EP
- STMicroelectronics
-
1:
$3.57
-
491En existencias
|
N.º de artículo de Mouser
511-STP25N60M2-EP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh M2 EP Power MOSFET in a TO-220 pack
|
|
491En existencias
|
|
|
$3.57
|
|
|
$1.85
|
|
|
$1.67
|
|
|
$1.37
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
188 mOhms
|
- 25 V, 25 V
|
2 V
|
29 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
- STP26N60DM6
- STMicroelectronics
-
1:
$4.55
-
486En existencias
|
N.º de artículo de Mouser
511-STP26N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 165 mOhm typ., 18 A MDmesh DM6 Power MOSFET in a TO-220 package
|
|
486En existencias
|
|
|
$4.55
|
|
|
$3.01
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
195 mOhms
|
- 25 V, 25 V
|
3.25 V
|
24 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STP28N60M2
- STMicroelectronics
-
1:
$3.72
-
512En existencias
|
N.º de artículo de Mouser
511-STP28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
512En existencias
|
|
|
$3.72
|
|
|
$1.92
|
|
|
$1.74
|
|
|
$1.42
|
|
|
$1.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24 A
|
120 mOhms
|
- 25 V, 25 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
- STP28N65M2
- STMicroelectronics
-
1:
$3.64
-
498En existencias
|
N.º de artículo de Mouser
511-STP28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220 package
|
|
498En existencias
|
|
|
$3.64
|
|
|
$1.92
|
|
|
$1.69
|
|
|
$1.44
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
150 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
170 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 4.2Ohm typ 2A Zener-protected
- STP2N95K5
- STMicroelectronics
-
1:
$2.05
-
930En existencias
|
N.º de artículo de Mouser
511-STP2N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 4.2Ohm typ 2A Zener-protected
|
|
930En existencias
|
|
|
$2.05
|
|
|
$1.01
|
|
|
$0.895
|
|
|
$0.717
|
|
|
Ver
|
|
|
$0.643
|
|
|
$0.603
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
2 A
|
4.2 Ohms
|
- 30 V, 30 V
|
4 V
|
10 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 2.4 A Zener SuperMESH
- STP3NK60Z
- STMicroelectronics
-
1:
$2.21
-
1,990En existencias
|
N.º de artículo de Mouser
511-STP3NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 2.4 A Zener SuperMESH
|
|
1,990En existencias
|
|
|
$2.21
|
|
|
$1.08
|
|
|
$0.963
|
|
|
$0.768
|
|
|
Ver
|
|
|
$0.699
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
2.4 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
11.8 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A
- STP3NK60ZFP
- STMicroelectronics
-
1:
$2.50
-
672En existencias
|
N.º de artículo de Mouser
511-STP3NK60ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 600V-3.3ohms Zener SuperMESH 2.4A
|
|
672En existencias
|
|
|
$2.50
|
|
|
$1.23
|
|
|
$1.11
|
|
|
$0.885
|
|
|
$0.802
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
600 V
|
2.4 A
|
3.6 Ohms
|
- 25 V, 25 V
|
3 V
|
11.8 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 3 Amp Zener SuperMESH
- STP3NK90Z
- STMicroelectronics
-
1:
$2.82
-
911En existencias
|
N.º de artículo de Mouser
511-STP3NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 900 Volt 3 Amp Zener SuperMESH
|
|
911En existencias
|
|
|
$2.82
|
|
|
$1.40
|
|
|
$1.26
|
|
|
$1.14
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
3 A
|
4.8 Ohms
|
- 30 V, 30 V
|
3 V
|
22.7 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package
- STP3NK90ZFP
- STMicroelectronics
-
1:
$1.95
-
1,194En existencias
|
N.º de artículo de Mouser
511-STP3NK90ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 4.1 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220FP package
|
|
1,194En existencias
|
|
|
$1.95
|
|
|
$0.948
|
|
|
$0.848
|
|
|
$0.725
|
|
|
Ver
|
|
|
$0.63
|
|
|
$0.576
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
3 A
|
4.8 Ohms
|
- 30 V, 30 V
|
3 V
|
22.7 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
- STP43N60DM2
- STMicroelectronics
-
1:
$5.92
-
10En existencias
-
3,000Se espera el 27/4/2026
|
N.º de artículo de Mouser
511-STP43N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.085 Ohm typ., 34 A MDmesh DM2 Power MOSFET in TO-220 package
|
|
10En existencias
3,000Se espera el 27/4/2026
|
|
|
$5.92
|
|
|
$3.16
|
|
|
$2.89
|
|
|
$2.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
34 A
|
93 mOhms
|
- 25 V, 25 V
|
3 V
|
56 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V 0 013 Ohm typ 45 A
- STP45N10F7
- STMicroelectronics
-
1:
$1.98
-
21En existencias
-
5,000Se espera el 6/4/2026
|
N.º de artículo de Mouser
511-STP45N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V 0 013 Ohm typ 45 A
|
|
21En existencias
5,000Se espera el 6/4/2026
|
|
|
$1.98
|
|
|
$0.956
|
|
|
$0.855
|
|
|
$0.679
|
|
|
Ver
|
|
|
$0.635
|
|
|
$0.594
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
100 V
|
45 A
|
18 mOhms
|
- 20 V, 20 V
|
4.5 V
|
25 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
|
STripFET
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
- STP4N52K3
- STMicroelectronics
-
1:
$1.52
-
715En existencias
|
N.º de artículo de Mouser
511-STP4N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 525V 2.5A 2.1 Ohm SuperMESH3
|
|
715En existencias
|
|
|
$1.52
|
|
|
$0.956
|
|
|
$0.729
|
|
|
$0.576
|
|
|
Ver
|
|
|
$0.518
|
|
|
$0.475
|
|
|
$0.422
|
|
|
$0.415
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
525 V
|
2.5 A
|
2.1 Ohms
|
- 30 V, 30 V
|
3.75 V
|
11 nC
|
|
|
20 W
|
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 2.1Ohm 3A Zener-protected
- STP4N80K5
- STMicroelectronics
-
1:
$2.21
-
908En existencias
|
N.º de artículo de Mouser
511-STP4N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 2.1Ohm 3A Zener-protected
|
|
908En existencias
|
|
|
$2.21
|
|
|
$1.08
|
|
|
$0.962
|
|
|
$0.867
|
|
|
Ver
|
|
|
$0.704
|
|
|
$0.689
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
2.1 Ohms
|
- 30 V, 30 V
|
4 V
|
10.5 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PowerMESH Zener SuperMESH
- STP4NK60ZFP
- STMicroelectronics
-
1:
$2.63
-
1,119En existencias
|
N.º de artículo de Mouser
511-STP4NK60ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) PowerMESH Zener SuperMESH
|
|
1,119En existencias
|
|
|
$2.63
|
|
|
$1.30
|
|
|
$1.17
|
|
|
$0.938
|
|
|
$0.877
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
4 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package
- STP50N60DM6
- STMicroelectronics
-
1:
$6.19
-
209En existencias
|
N.º de artículo de Mouser
511-STP50N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in a TO-220 package
|
|
209En existencias
|
|
|
$6.19
|
|
|
$3.52
|
|
|
$3.23
|
|
|
$2.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
|
N-Channel
|
1 Channel
|
650 V
|
36 A
|
80 mOhms
|
- 25 V, 25 V
|
4.75 V
|
55 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
- STP5N80K5
- STMicroelectronics
-
1:
$2.30
-
1,143En existencias
|
N.º de artículo de Mouser
511-STP5N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
1,143En existencias
|
|
|
$2.30
|
|
|
$1.09
|
|
|
$0.883
|
|
|
$0.767
|
|
|
$0.709
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.5 Ohms
|
- 30 V, 30 V
|
3 V
|
5 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|