|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.6A DPAK-2
- IPD60R380P6ATMA1
- Infineon Technologies
-
1:
$2.08
-
7,256En existencias
|
N.º de artículo de Mouser
726-IPD60R380P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.6A DPAK-2
|
|
7,256En existencias
|
|
|
$2.08
|
|
|
$1.32
|
|
|
$0.889
|
|
|
$0.721
|
|
|
$0.566
|
|
|
Ver
|
|
|
$0.646
|
|
|
$0.534
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10.6 A
|
380 mOhms
|
- 20 V, 20 V
|
3.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPL60R180P6AUMA1
- Infineon Technologies
-
1:
$3.40
-
3,881En existencias
|
N.º de artículo de Mouser
726-IPL60R180P6AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
3,881En existencias
|
|
|
$3.40
|
|
|
$2.41
|
|
|
$1.89
|
|
|
$1.66
|
|
|
$1.36
|
|
|
Ver
|
|
|
$1.57
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22.4 A
|
162 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 40 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R099P6XKSA1
- Infineon Technologies
-
1:
$6.58
-
714En existencias
|
N.º de artículo de Mouser
726-IPP60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
714En existencias
|
|
|
$6.58
|
|
|
$4.11
|
|
|
$3.22
|
|
|
$2.47
|
|
|
Ver
|
|
|
$2.40
|
|
|
$2.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPA60R190P6
- Infineon Technologies
-
1:
$3.15
-
524En existencias
|
N.º de artículo de Mouser
726-IPA60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
524En existencias
|
|
|
$3.15
|
|
|
$2.05
|
|
|
$1.41
|
|
|
$1.17
|
|
|
Ver
|
|
|
$1.09
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 Ohms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPP60R190P6
- Infineon Technologies
-
1:
$3.49
-
737En existencias
|
N.º de artículo de Mouser
726-IPP60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
737En existencias
|
|
|
$3.49
|
|
|
$2.28
|
|
|
$1.60
|
|
|
$1.33
|
|
|
Ver
|
|
|
$1.23
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_PRC/PRFRM
- IPA60R600P6
- Infineon Technologies
-
1:
$2.25
-
430En existencias
|
N.º de artículo de Mouser
726-IPA60R600P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_PRC/PRFRM
|
|
430En existencias
|
|
|
$2.25
|
|
|
$1.43
|
|
|
$0.963
|
|
|
$0.779
|
|
|
Ver
|
|
|
$0.698
|
|
|
$0.653
|
|
|
$0.624
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
540 mOhms
|
- 20 V, 20 V
|
3.5 V
|
12 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPW60R190P6
- Infineon Technologies
-
1:
$4.21
-
575En existencias
|
N.º de artículo de Mouser
726-IPW60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
575En existencias
|
|
|
$4.21
|
|
|
$2.76
|
|
|
$2.06
|
|
|
$1.72
|
|
|
Ver
|
|
|
$1.59
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
171 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPD60R600P6ATMA1
- Infineon Technologies
-
1:
$1.80
-
1,986En existencias
|
N.º de artículo de Mouser
726-IPD60R600P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
1,986En existencias
|
|
|
$1.80
|
|
|
$1.13
|
|
|
$0.743
|
|
|
$0.59
|
|
|
$0.478
|
|
|
Ver
|
|
|
$0.524
|
|
|
$0.46
|
|
|
$0.413
|
|
|
$0.403
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
4 V
|
12 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPW60R160P6
- Infineon Technologies
-
1:
$5.01
-
804En existencias
|
N.º de artículo de Mouser
726-IPW60R160P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
804En existencias
|
|
|
$5.01
|
|
|
$3.28
|
|
|
$2.45
|
|
|
$2.04
|
|
|
Ver
|
|
|
$1.90
|
|
|
$1.79
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER PRICE/PERFORM
- IPL60R210P6
- Infineon Technologies
-
1:
$3.67
-
242En existencias
-
3,000Se espera el 15/7/2026
|
N.º de artículo de Mouser
726-IPL60R210P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER PRICE/PERFORM
|
|
242En existencias
3,000Se espera el 15/7/2026
|
|
|
$3.67
|
|
|
$2.39
|
|
|
$1.68
|
|
|
$1.41
|
|
|
$1.36
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
ThinPAK-5
|
N-Channel
|
1 Channel
|
600 V
|
19.2 A
|
189 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 40 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R125P6
- Infineon Technologies
-
1:
$5.38
-
450En existencias
|
N.º de artículo de Mouser
726-IPP60R125P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
450En existencias
|
|
|
$5.38
|
|
|
$3.53
|
|
|
$2.63
|
|
|
$2.20
|
|
|
Ver
|
|
|
$2.04
|
|
|
$1.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R125P6XKSA1
- Infineon Technologies
-
1:
$4.74
-
822En existencias
|
N.º de artículo de Mouser
726-IPA60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
822En existencias
|
|
|
$4.74
|
|
|
$2.96
|
|
|
$2.32
|
|
|
$1.69
|
|
|
$1.57
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRICE/PERFORM
- IPB60R160P6ATMA1
- Infineon Technologies
-
1:
$4.48
-
3,027En existencias
-
2,000Se espera el 15/7/2026
|
N.º de artículo de Mouser
726-IPB60R160P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRICE/PERFORM
|
|
3,027En existencias
2,000Se espera el 15/7/2026
|
|
|
$4.48
|
|
|
$2.94
|
|
|
$2.13
|
|
|
$1.77
|
|
|
$1.63
|
|
|
Ver
|
|
|
$1.60
|
|
|
$1.34
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
160 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R099P6XKSA1
- Infineon Technologies
-
1:
$6.05
-
879En existencias
|
N.º de artículo de Mouser
726-IPA60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
879En existencias
|
|
|
$6.05
|
|
|
$3.54
|
|
|
$2.92
|
|
|
$2.74
|
|
|
Ver
|
|
|
$2.20
|
|
|
$2.15
|
|
|
$2.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R099P6XKSA1
- Infineon Technologies
-
1:
$7.21
-
1,197En existencias
|
N.º de artículo de Mouser
726-IPW60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
1,197En existencias
|
|
|
$7.21
|
|
|
$4.08
|
|
|
$3.38
|
|
|
$2.87
|
|
|
Ver
|
|
|
$2.54
|
|
|
$2.23
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6
- Infineon Technologies
-
1:
$3.87
-
30En existencias
|
N.º de artículo de Mouser
726-IPA60R160P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
30En existencias
|
|
|
$3.87
|
|
|
$2.52
|
|
|
$1.77
|
|
|
$1.47
|
|
|
Ver
|
|
|
$1.37
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6XKSA1
- Infineon Technologies
-
1:
$4.15
-
8En existencias
-
1,000Se espera el 1/10/2026
|
N.º de artículo de Mouser
726-IPA60R160P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
8En existencias
1,000Se espera el 1/10/2026
|
|
|
$4.15
|
|
|
$2.27
|
|
|
$1.92
|
|
|
$1.52
|
|
|
Ver
|
|
|
$1.42
|
|
|
$1.38
|
|
|
$1.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6
- Infineon Technologies
-
1:
$2.83
-
39En existencias
-
500Se espera el 15/7/2026
|
N.º de artículo de Mouser
726-IPA60R280P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
39En existencias
500Se espera el 15/7/2026
|
|
|
$2.83
|
|
|
$1.82
|
|
|
$1.24
|
|
|
$1.04
|
|
|
Ver
|
|
|
$0.927
|
|
|
$0.877
|
|
|
$0.838
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6XKSA1
- Infineon Technologies
-
1:
$3.03
-
736En existencias
|
N.º de artículo de Mouser
726-IPA60R280P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
736En existencias
|
|
|
$3.03
|
|
|
$1.62
|
|
|
$1.34
|
|
|
$1.09
|
|
|
Ver
|
|
|
$0.899
|
|
|
$0.877
|
|
|
$0.793
|
|
|
$0.766
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R125P6XKSA1
- Infineon Technologies
-
1:
$6.18
-
113En existencias
|
N.º de artículo de Mouser
726-IPW60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
113En existencias
|
|
|
$6.18
|
|
|
$3.67
|
|
|
$2.98
|
|
|
$2.32
|
|
|
Ver
|
|
|
$2.12
|
|
|
$2.05
|
|
|
$1.96
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPW60R160P6FKSA1
- Infineon Technologies
-
1:
$5.32
-
343En existencias
|
N.º de artículo de Mouser
726-IPW60R160P6FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
343En existencias
|
|
|
$5.32
|
|
|
$3.18
|
|
|
$2.67
|
|
|
$1.99
|
|
|
Ver
|
|
|
$1.80
|
|
|
$1.74
|
|
|
$1.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R099P6
- Infineon Technologies
-
1:
$5.87
-
383En existencias
|
N.º de artículo de Mouser
726-IPA60R099P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
383En existencias
|
|
|
$5.87
|
|
|
$3.85
|
|
|
$2.89
|
|
|
$2.45
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
- IPA60R230P6XKSA1
- Infineon Technologies
-
1:
$3.28
-
520En existencias
|
N.º de artículo de Mouser
726-IPA60R230P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
|
|
520En existencias
|
|
|
$3.28
|
|
|
$1.78
|
|
|
$1.64
|
|
|
$1.32
|
|
|
Ver
|
|
|
$0.994
|
|
|
$0.976
|
|
|
$0.885
|
|
|
$0.857
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16.8 A
|
538 mOhms
|
- 20 V, 20 V
|
4 V
|
31 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R099P6
- Infineon Technologies
-
1:
$6.67
-
500En existencias
|
N.º de artículo de Mouser
726-IPP60R099P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
500En existencias
|
|
|
$6.67
|
|
|
$4.37
|
|
|
$3.28
|
|
|
$2.78
|
|
|
$2.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R125P6XKSA1
- Infineon Technologies
-
1:
$6.16
-
276En existencias
|
N.º de artículo de Mouser
726-IPP60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
276En existencias
|
|
|
$6.16
|
|
|
$3.53
|
|
|
$2.90
|
|
|
$2.08
|
|
|
Ver
|
|
|
$1.90
|
|
|
$1.84
|
|
|
$1.73
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|