|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER PRICE/PERFORM
- IPL60R210P6
- Infineon Technologies
-
1:
$3.36
-
1,510En existencias
|
N.º de artículo de Mouser
726-IPL60R210P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER PRICE/PERFORM
|
|
1,510En existencias
|
|
|
$3.36
|
|
|
$2.19
|
|
|
$1.68
|
|
|
$1.41
|
|
|
$1.30
|
|
|
$1.22
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
ThinPAK-5
|
N-Channel
|
1 Channel
|
600 V
|
19.2 A
|
189 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 40 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPW60R160P6
- Infineon Technologies
-
1:
$4.40
-
844En existencias
|
N.º de artículo de Mouser
726-IPW60R160P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
844En existencias
|
|
|
$4.40
|
|
|
$2.94
|
|
|
$2.26
|
|
|
$2.00
|
|
|
Ver
|
|
|
$1.78
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.6A DPAK-2
- IPD60R380P6ATMA1
- Infineon Technologies
-
1:
$1.92
-
7,306En existencias
|
N.º de artículo de Mouser
726-IPD60R380P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.6A DPAK-2
|
|
7,306En existencias
|
|
|
$1.92
|
|
|
$1.23
|
|
|
$0.83
|
|
|
$0.659
|
|
|
$0.52
|
|
|
Ver
|
|
|
$0.602
|
|
|
$0.50
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10.6 A
|
380 mOhms
|
- 20 V, 20 V
|
3.5 V
|
19 nC
|
- 55 C
|
+ 150 C
|
31 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R099P6XKSA1
- Infineon Technologies
-
1:
$5.85
-
1,307En existencias
|
N.º de artículo de Mouser
726-IPW60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
1,307En existencias
|
|
|
$5.85
|
|
|
$3.30
|
|
|
$2.54
|
|
|
$2.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPA60R190P6
- Infineon Technologies
-
1:
$2.95
-
598En existencias
|
N.º de artículo de Mouser
726-IPA60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
598En existencias
|
|
|
$2.95
|
|
|
$1.91
|
|
|
$1.41
|
|
|
$1.17
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 Ohms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPP60R190P6
- Infineon Technologies
-
1:
$3.20
-
873En existencias
|
N.º de artículo de Mouser
726-IPP60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
873En existencias
|
|
|
$3.20
|
|
|
$2.09
|
|
|
$1.60
|
|
|
$1.33
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
190 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
- IPW60R190P6
- Infineon Technologies
-
1:
$3.94
-
595En existencias
|
N.º de artículo de Mouser
726-IPW60R190P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRC/PRFRM
|
|
595En existencias
|
|
|
$3.94
|
|
|
$2.58
|
|
|
$1.90
|
|
|
$1.68
|
|
|
$1.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
20.2 A
|
171 mOhms
|
- 20 V, 20 V
|
3.5 V
|
37 nC
|
- 55 C
|
+ 150 C
|
151 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPP60R160P6
- Infineon Technologies
-
1:
$3.55
-
401En existencias
|
N.º de artículo de Mouser
726-IPP60R160P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
401En existencias
|
|
|
$3.55
|
|
|
$2.31
|
|
|
$1.77
|
|
|
$1.47
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_PRC/PRFRM
- IPA60R600P6
- Infineon Technologies
-
1:
$2.08
-
430En existencias
|
N.º de artículo de Mouser
726-IPA60R600P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_PRC/PRFRM
|
|
430En existencias
|
|
|
$2.08
|
|
|
$1.33
|
|
|
$0.921
|
|
|
$0.779
|
|
|
Ver
|
|
|
$0.651
|
|
|
$0.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
540 mOhms
|
- 20 V, 20 V
|
3.5 V
|
12 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPL60R180P6AUMA1
- Infineon Technologies
-
1:
$2.65
-
3,881En existencias
|
N.º de artículo de Mouser
726-IPL60R180P6AUMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
3,881En existencias
|
|
|
$2.65
|
|
|
$2.01
|
|
|
$1.65
|
|
|
$1.52
|
|
|
Ver
|
|
|
$1.27
|
|
|
$1.46
|
|
|
$1.27
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
VSON-4
|
N-Channel
|
1 Channel
|
600 V
|
22.4 A
|
162 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 40 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R125P6XKSA1
- Infineon Technologies
-
1:
$4.14
-
854En existencias
|
N.º de artículo de Mouser
726-IPA60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
854En existencias
|
|
|
$4.14
|
|
|
$2.14
|
|
|
$1.94
|
|
|
$1.52
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
- IPD60R600P6ATMA1
- Infineon Technologies
-
1:
$1.72
-
1,986En existencias
|
N.º de artículo de Mouser
726-IPD60R600P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_LEGACY
|
|
1,986En existencias
|
|
|
$1.72
|
|
|
$1.09
|
|
|
$0.727
|
|
|
$0.572
|
|
|
$0.467
|
|
|
Ver
|
|
|
$0.522
|
|
|
$0.444
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
7.3 A
|
600 mOhms
|
- 20 V, 20 V
|
4 V
|
12 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R125P6
- Infineon Technologies
-
1:
$4.69
-
500En existencias
|
N.º de artículo de Mouser
726-IPP60R125P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
500En existencias
|
|
|
$4.69
|
|
|
$3.10
|
|
|
$2.43
|
|
|
$2.06
|
|
|
Ver
|
|
|
$1.91
|
|
|
$1.90
|
|
|
$1.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRICE/PERFORM
- IPB60R160P6ATMA1
- Infineon Technologies
-
1:
$4.00
-
4,037En existencias
|
N.º de artículo de Mouser
726-IPB60R160P6ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_PRICE/PERFORM
|
|
4,037En existencias
|
|
|
$4.00
|
|
|
$2.62
|
|
|
$1.84
|
|
|
$1.65
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
160 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R099P6XKSA1
- Infineon Technologies
-
1:
$5.60
-
881En existencias
|
N.º de artículo de Mouser
726-IPA60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
881En existencias
|
|
|
$5.60
|
|
|
$2.92
|
|
|
$2.67
|
|
|
$2.51
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6
- Infineon Technologies
-
1:
$3.55
-
30En existencias
|
N.º de artículo de Mouser
726-IPA60R160P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
30En existencias
|
|
|
$3.55
|
|
|
$2.31
|
|
|
$1.77
|
|
|
$1.47
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
- IPA60R160P6XKSA1
- Infineon Technologies
-
1:
$3.37
-
8En existencias
|
N.º de artículo de Mouser
726-IPA60R160P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 10.4A TO220FP-3
|
|
8En existencias
|
|
|
$3.37
|
|
|
$1.70
|
|
|
$1.54
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPP60R099P6XKSA1
- Infineon Technologies
-
1:
$5.70
-
214En existencias
-
500Se espera el 9/7/2026
|
N.º de artículo de Mouser
726-IPP60R099P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
214En existencias
500Se espera el 9/7/2026
|
|
|
$5.70
|
|
|
$3.53
|
|
|
$3.22
|
|
|
$2.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
278 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R041P6
- Infineon Technologies
-
1:
$9.88
-
37En existencias
-
480Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPW60R041P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
37En existencias
480Se espera el 2/7/2026
|
|
|
$9.88
|
|
|
$7.73
|
|
|
$6.44
|
|
|
$5.73
|
|
|
$5.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
77.5 A
|
37 mOhms
|
- 20 V, 20 V
|
3.5 V
|
170 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R041P6FKSA1
- Infineon Technologies
-
1:
$9.84
-
151En existencias
-
480Se espera el 2/7/2026
|
N.º de artículo de Mouser
726-IPW60R041P6FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
151En existencias
480Se espera el 2/7/2026
|
|
|
$9.84
|
|
|
$5.83
|
|
|
$5.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
77.5 A
|
37 mOhms
|
- 20 V, 20 V
|
3.5 V
|
170 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPW60R125P6XKSA1
- Infineon Technologies
-
1:
$4.90
-
115En existencias
|
N.º de artículo de Mouser
726-IPW60R125P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
115En existencias
|
|
|
$4.90
|
|
|
$2.75
|
|
|
$2.27
|
|
|
$2.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
113 mOhms
|
- 20 V, 20 V
|
3.5 V
|
56 nC
|
- 55 C
|
+ 150 C
|
219 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
- IPW60R160P6FKSA1
- Infineon Technologies
-
1:
$4.29
-
343En existencias
|
N.º de artículo de Mouser
726-IPW60R160P6FKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_LEGACY
|
|
343En existencias
|
|
|
$4.29
|
|
|
$2.38
|
|
|
$2.26
|
|
|
$1.78
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
23.8 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
176 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
- IPA60R099P6
- Infineon Technologies
-
1:
$5.87
-
383En existencias
|
N.º de artículo de Mouser
726-IPA60R099P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER PRICE/PERFORM
|
|
383En existencias
|
|
|
$5.87
|
|
|
$3.85
|
|
|
$2.89
|
|
|
$2.45
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
37.9 A
|
89 mOhms
|
- 20 V, 20 V
|
3.5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
34 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
- IPA60R230P6XKSA1
- Infineon Technologies
-
1:
$2.70
-
544En existencias
|
N.º de artículo de Mouser
726-IPA60R230P6XKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 8.6A TO220FP-3
|
|
544En existencias
|
|
|
$2.70
|
|
|
$1.34
|
|
|
$1.20
|
|
|
$0.944
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16.8 A
|
538 mOhms
|
- 20 V, 20 V
|
4 V
|
31 nC
|
- 55 C
|
+ 150 C
|
33 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
- IPA60R280P6
- Infineon Technologies
-
1:
$2.65
-
49En existencias
|
N.º de artículo de Mouser
726-IPA60R280P6
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 7.7A TO220FP-3
|
|
49En existencias
|
|
|
$2.65
|
|
|
$1.70
|
|
|
$1.16
|
|
|
$0.961
|
|
|
Ver
|
|
|
$0.846
|
|
|
$0.833
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13.8 A
|
252 mOhms
|
- 20 V, 20 V
|
3.5 V
|
25.5 nC
|
- 55 C
|
+ 150 C
|
32 W
|
Enhancement
|
CoolMOS
|
Tube
|
|