|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 36A TDSON-8 OptiMOS
- BSZ0909NS
- Infineon Technologies
-
1:
$0.86
-
532En existencias
-
10,000Se espera el 2/2/2027
|
N.º de artículo de Mouser
726-BSZ0909NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 36A TDSON-8 OptiMOS
|
|
532En existencias
10,000Se espera el 2/2/2027
|
|
|
$0.86
|
|
|
$0.533
|
|
|
$0.346
|
|
|
$0.265
|
|
|
$0.163
|
|
|
Ver
|
|
|
$0.217
|
|
|
$0.161
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
34 V
|
36 A
|
12 mOhms
|
- 20 V, 20 V
|
2 V
|
13 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
- BSZ100N03MS G
- Infineon Technologies
-
1:
$0.99
-
1,180En existencias
|
N.º de artículo de Mouser
726-BSZ100N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
|
|
1,180En existencias
|
|
|
$0.99
|
|
|
$0.612
|
|
|
$0.419
|
|
|
$0.329
|
|
|
$0.215
|
|
|
Ver
|
|
|
$0.274
|
|
|
$0.254
|
|
|
$0.204
|
|
|
$0.192
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
7.3 mOhms
|
- 20 V, 20 V
|
1 V
|
23 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
- BSZ100N06LS3 G
- Infineon Technologies
-
1:
$1.63
-
8,543En existencias
|
N.º de artículo de Mouser
726-BSZ100N06LS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
|
|
8,543En existencias
|
|
|
$1.63
|
|
|
$1.04
|
|
|
$0.689
|
|
|
$0.565
|
|
|
Ver
|
|
|
$0.407
|
|
|
$0.495
|
|
|
$0.48
|
|
|
$0.407
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
20 A
|
7.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 35A TSDSON-8 OptiMOS 3
- BSZ130N03LS G
- Infineon Technologies
-
1:
$0.91
-
2,913En existencias
|
N.º de artículo de Mouser
726-BSZ130N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 35A TSDSON-8 OptiMOS 3
|
|
2,913En existencias
|
|
|
$0.91
|
|
|
$0.567
|
|
|
$0.369
|
|
|
$0.283
|
|
|
$0.20
|
|
|
Ver
|
|
|
$0.232
|
|
|
$0.178
|
|
|
$0.176
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
35 A
|
16.8 mOhms
|
- 20 V, 20 V
|
2.2 V
|
9.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 13A TSDSON-8 OptiMOS 3
- BSZ900N15NS3 G
- Infineon Technologies
-
1:
$1.94
-
2,025En existencias
|
N.º de artículo de Mouser
726-BSZ900N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 13A TSDSON-8 OptiMOS 3
|
|
2,025En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.821
|
|
|
$0.673
|
|
|
Ver
|
|
|
$0.498
|
|
|
$0.589
|
|
|
$0.587
|
|
|
$0.498
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
13 A
|
74 mOhms
|
- 20 V, 20 V
|
2 V
|
7 nC
|
- 55 C
|
+ 150 C
|
38 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
- IPB042N10N3 G
- Infineon Technologies
-
1:
$2.72
-
967En existencias
|
N.º de artículo de Mouser
726-IPB042N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
|
|
967En existencias
|
|
|
$2.72
|
|
|
$1.75
|
|
|
$1.25
|
|
|
$1.06
|
|
|
$0.897
|
|
|
Ver
|
|
|
$0.852
|
|
|
$0.846
|
|
|
$0.824
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.2 mOhms
|
- 20 V, 20 V
|
2 V
|
88 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
- BSC027N04LS G
- Infineon Technologies
-
1:
$1.51
-
5,756En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC027N04LSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
|
|
5,756En existencias
|
|
|
$1.51
|
|
|
$0.946
|
|
|
$0.628
|
|
|
$0.496
|
|
|
Ver
|
|
|
$0.357
|
|
|
$0.447
|
|
|
$0.422
|
|
|
$0.357
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
1.2 V
|
85 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
OptiMOS 5
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
- BSC035N04LS G
- Infineon Technologies
-
1:
$1.43
-
294En existencias
-
5,000Se espera el 26/11/2026
-
NRND
|
N.º de artículo de Mouser
726-BSC035N04LSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
|
|
294En existencias
5,000Se espera el 26/11/2026
|
|
|
$1.43
|
|
|
$0.896
|
|
|
$0.595
|
|
|
$0.47
|
|
|
Ver
|
|
|
$0.349
|
|
|
$0.423
|
|
|
$0.349
|
|
|
$0.349
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
2.9 mOhms
|
- 20 V, 20 V
|
1.2 V
|
64 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
- BSZ160N10NS3 G
- Infineon Technologies
-
1:
$2.12
-
1,165En existencias
|
N.º de artículo de Mouser
726-BSZ160N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TSDSON-8 OptiMOS 3
|
|
1,165En existencias
|
|
|
$2.12
|
|
|
$1.36
|
|
|
$0.938
|
|
|
$0.795
|
|
|
Ver
|
|
|
$0.589
|
|
|
$0.664
|
|
|
$0.613
|
|
|
$0.589
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
14 mOhms
|
- 20 V, 20 V
|
2 V
|
25 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
- BSZ067N06LS3 G
- Infineon Technologies
-
1:
$2.06
-
1,525En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSZ067N06LS3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
|
|
1,525En existencias
|
|
|
$2.06
|
|
|
$1.31
|
|
|
$0.87
|
|
|
$0.713
|
|
|
Ver
|
|
|
$0.514
|
|
|
$0.624
|
|
|
$0.606
|
|
|
$0.514
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
20 A
|
5.3 mOhms
|
- 20 V, 20 V
|
1.7 V
|
51 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
- BSC030N03MS G
- Infineon Technologies
-
1:
$1.36
-
5,000Se espera el 13/8/2026
|
N.º de artículo de Mouser
726-BSC030N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
|
|
5,000Se espera el 13/8/2026
|
|
|
$1.36
|
|
|
$0.857
|
|
|
$0.568
|
|
|
$0.466
|
|
|
Ver
|
|
|
$0.318
|
|
|
$0.403
|
|
|
$0.375
|
|
|
$0.318
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.5 mOhms
|
- 20 V, 20 V
|
1 V
|
73 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 40A TSDSON-8 OptiMOS 3
- BSZ040N04LS G
- Infineon Technologies
-
1:
$1.45
-
10,000Se espera el 27/8/2026
|
N.º de artículo de Mouser
726-BSZ040N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 40A TSDSON-8 OptiMOS 3
|
|
10,000Se espera el 27/8/2026
|
|
|
$1.45
|
|
|
$0.911
|
|
|
$0.605
|
|
|
$0.478
|
|
|
Ver
|
|
|
$0.355
|
|
|
$0.431
|
|
|
$0.395
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
105 A
|
4.5 mOhms
|
- 20 V, 20 V
|
2 V
|
48 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
- BSZ110N06NS3 G
- Infineon Technologies
-
1:
$1.28
-
24,995En pedido
|
N.º de artículo de Mouser
726-BSZ110N06NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 20A TSDSON-8 OptiMOS 3
|
|
24,995En pedido
En pedido:
14,995 Se espera el 31/12/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$1.28
|
|
|
$0.793
|
|
|
$0.524
|
|
|
$0.408
|
|
|
Ver
|
|
|
$0.295
|
|
|
$0.359
|
|
|
$0.341
|
|
|
$0.295
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
20 A
|
8.8 mOhms
|
- 20 V, 20 V
|
3 V
|
25 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|