|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
- IPB090N06N3 G
- Infineon Technologies
-
1:
$2.02
-
3,534En existencias
|
N.º de artículo de Mouser
726-IPB090N06N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
|
|
3,534En existencias
|
|
|
$2.02
|
|
|
$1.29
|
|
|
$0.849
|
|
|
$0.673
|
|
|
$0.574
|
|
|
Ver
|
|
|
$0.551
|
|
|
$0.495
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
9 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
- BSC054N04NS G
- Infineon Technologies
-
1:
$1.51
-
121,213En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC054N04NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
|
|
121,213En existencias
|
|
|
$1.51
|
|
|
$0.928
|
|
|
$0.611
|
|
|
$0.48
|
|
|
$0.321
|
|
|
Ver
|
|
|
$0.411
|
|
|
$0.379
|
|
|
$0.318
|
|
|
$0.31
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
81 A
|
5.4 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
- IPB108N15N3 G
- Infineon Technologies
-
1:
$4.02
-
2,619En existencias
|
N.º de artículo de Mouser
726-IP726-B108N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
|
|
2,619En existencias
|
|
|
$4.02
|
|
|
$2.53
|
|
|
$2.00
|
|
|
$1.78
|
|
|
$1.68
|
|
|
Ver
|
|
|
$1.58
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
10.8 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
- IPB027N10N3 G
- Infineon Technologies
-
1:
$6.10
-
4,861En existencias
|
N.º de artículo de Mouser
726-IPB027N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
|
|
4,861En existencias
|
|
|
$6.10
|
|
|
$4.00
|
|
|
$2.95
|
|
|
$2.62
|
|
|
$2.34
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
206 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
- BSC360N15NS3 G
- Infineon Technologies
-
1:
$2.85
-
4,900En existencias
-
5,000En pedido
|
N.º de artículo de Mouser
726-BSC360N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 33A TDSON-8 OptiMOS 3
|
|
4,900En existencias
5,000En pedido
|
|
|
$2.85
|
|
|
$1.83
|
|
|
$1.24
|
|
|
$1.05
|
|
|
Ver
|
|
|
$0.842
|
|
|
$0.937
|
|
|
$0.886
|
|
|
$0.842
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
33 A
|
36 mOhms
|
- 20 V, 20 V
|
3 V
|
12 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
- BSZ440N10NS3 G
- Infineon Technologies
-
1:
$1.40
-
76,288En existencias
|
N.º de artículo de Mouser
726-BSZ440N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 18A TSDSON-8 OptiMOS 3
|
|
76,288En existencias
|
|
|
$1.40
|
|
|
$0.864
|
|
|
$0.569
|
|
|
$0.447
|
|
|
$0.307
|
|
|
Ver
|
|
|
$0.382
|
|
|
$0.347
|
|
|
$0.296
|
|
|
$0.289
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
18 A
|
38 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
- BSC030N03MS G
- Infineon Technologies
-
1:
$1.71
-
5,000En existencias
|
N.º de artículo de Mouser
726-BSC030N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS 3M
|
|
5,000En existencias
|
|
|
$1.71
|
|
|
$1.06
|
|
|
$0.694
|
|
|
$0.546
|
|
|
$0.374
|
|
|
Ver
|
|
|
$0.467
|
|
|
$0.423
|
|
|
$0.362
|
|
|
$0.355
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.5 mOhms
|
- 20 V, 20 V
|
1 V
|
73 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
- BSZ018NE2LS
- Infineon Technologies
-
1:
$1.67
-
5,900En existencias
|
N.º de artículo de Mouser
726-BSZ018NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
|
|
5,900En existencias
|
|
|
$1.67
|
|
|
$1.12
|
|
|
$0.684
|
|
|
$0.578
|
|
|
$0.421
|
|
|
Ver
|
|
|
$0.513
|
|
|
$0.483
|
|
|
$0.417
|
|
|
$0.406
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
153 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2 V
|
39 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
- BSZ050N03LS G
- Infineon Technologies
-
1:
$1.13
-
5,341En existencias
|
N.º de artículo de Mouser
726-BSZ050N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
|
|
5,341En existencias
|
|
|
$1.13
|
|
|
$0.698
|
|
|
$0.459
|
|
|
$0.361
|
|
|
$0.247
|
|
|
Ver
|
|
|
$0.317
|
|
|
$0.28
|
|
|
$0.239
|
|
|
$0.235
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
6.2 mOhms
|
- 20 V, 20 V
|
2.2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0902NSI
- Infineon Technologies
-
1:
$1.27
-
7,936En existencias
|
N.º de artículo de Mouser
726-BSC0902NSI
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
7,936En existencias
|
|
|
$1.27
|
|
|
$0.72
|
|
|
$0.514
|
|
|
$0.427
|
|
|
$0.314
|
|
|
Ver
|
|
|
$0.368
|
|
|
$0.356
|
|
|
$0.308
|
|
|
$0.271
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
2 V
|
16.2 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
- BSC0906NS
- Infineon Technologies
-
1:
$1.00
-
9,659En existencias
|
N.º de artículo de Mouser
726-BSC0906NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
|
|
9,659En existencias
|
|
|
$1.00
|
|
|
$0.662
|
|
|
$0.439
|
|
|
$0.33
|
|
|
$0.215
|
|
|
Ver
|
|
|
$0.278
|
|
|
$0.249
|
|
|
$0.198
|
|
|
$0.171
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
63 A
|
4.5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
13 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
- BSC118N10NS G
- Infineon Technologies
-
1:
$2.46
-
4,302En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC118N10NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
|
|
4,302En existencias
|
|
|
$2.46
|
|
|
$1.58
|
|
|
$1.07
|
|
|
$0.914
|
|
|
Ver
|
|
|
$0.73
|
|
|
$0.809
|
|
|
$0.766
|
|
|
$0.73
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
11 A
|
11.8 mOhms
|
- 20 V, 20 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
- IPB037N06N3 G
- Infineon Technologies
-
1:
$3.45
-
839En existencias
|
N.º de artículo de Mouser
726-IPB037N06N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A D2PAK-2 OptiMOS 3
|
|
839En existencias
|
|
|
$3.45
|
|
|
$2.23
|
|
|
$1.54
|
|
|
$1.28
|
|
|
$1.19
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
3 mOhms
|
- 20 V, 20 V
|
2 V
|
98 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC076N06NS3 G
- Infineon Technologies
-
1:
$2.05
-
3,368En existencias
|
N.º de artículo de Mouser
726-BSC076N06NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
|
|
3,368En existencias
|
|
|
$2.05
|
|
|
$1.29
|
|
|
$0.845
|
|
|
$0.67
|
|
|
$0.523
|
|
|
Ver
|
|
|
$0.596
|
|
|
$0.544
|
|
|
$0.511
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
6.2 mOhms
|
- 20 V, 20 V
|
2 V
|
50 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC011N03LS
- Infineon Technologies
-
1:
$2.29
-
18,767En existencias
|
N.º de artículo de Mouser
726-BSC011N03LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
18,767En existencias
|
|
|
$2.29
|
|
|
$1.45
|
|
|
$0.977
|
|
|
$0.792
|
|
|
Ver
|
|
|
$0.638
|
|
|
$0.71
|
|
|
$0.664
|
|
|
$0.638
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
230 A
|
1.1 mOhms
|
- 20 V, 20 V
|
2 V
|
72 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSF G
- Infineon Technologies
-
1:
$1.92
-
2,155En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
2,155En existencias
|
|
|
$1.92
|
|
|
$1.19
|
|
|
$0.779
|
|
|
$0.613
|
|
|
$0.42
|
|
|
Ver
|
|
|
$0.524
|
|
|
$0.475
|
|
|
$0.406
|
|
|
$0.399
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0902NS
- Infineon Technologies
-
1:
$1.60
-
3,911En existencias
|
N.º de artículo de Mouser
726-BSC0902NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
3,911En existencias
|
|
|
$1.60
|
|
|
$0.986
|
|
|
$0.65
|
|
|
$0.511
|
|
|
$0.35
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.396
|
|
|
$0.339
|
|
|
$0.332
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC110N06NS3 G
- Infineon Technologies
-
1:
$1.82
-
49,552En existencias
|
N.º de artículo de Mouser
726-BSC110N06NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
|
|
49,552En existencias
|
|
|
$1.82
|
|
|
$1.13
|
|
|
$0.738
|
|
|
$0.58
|
|
|
$0.388
|
|
|
Ver
|
|
|
$0.496
|
|
|
$0.458
|
|
|
$0.385
|
|
|
$0.375
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
9 mOhms
|
- 20 V, 20 V
|
2 V
|
33 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
- BSC520N15NS3 G
- Infineon Technologies
-
1:
$2.17
-
4,836En existencias
-
29,935En pedido
|
N.º de artículo de Mouser
726-BSC520N15NS3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
|
|
4,836En existencias
29,935En pedido
Existencias:
4,836 Se puede enviar inmediatamente
En pedido:
14,935 Se espera el 3/8/2026
15,000 Se espera el 3/9/2026
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$2.17
|
|
|
$1.38
|
|
|
$0.929
|
|
|
$0.753
|
|
|
Ver
|
|
|
$0.606
|
|
|
$0.675
|
|
|
$0.631
|
|
|
$0.606
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
21 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
8.7 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
- BSZ035N03MS G
- Infineon Technologies
-
1:
$1.72
-
4,407En existencias
|
N.º de artículo de Mouser
726-BSZ035N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
|
|
4,407En existencias
|
|
|
$1.72
|
|
|
$1.08
|
|
|
$0.707
|
|
|
$0.554
|
|
|
$0.386
|
|
|
Ver
|
|
|
$0.467
|
|
|
$0.436
|
|
|
$0.373
|
|
|
$0.328
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
113 A
|
3.4 mOhms
|
- 20 V, 20 V
|
2 V
|
56 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 40A TSDSON-8 OptiMOS 3
- BSZ097N04LS G
- Infineon Technologies
-
1:
$1.41
-
157,005En existencias
|
N.º de artículo de Mouser
726-BSZ097N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 40A TSDSON-8 OptiMOS 3
|
|
157,005En existencias
|
|
|
$1.41
|
|
|
$0.867
|
|
|
$0.571
|
|
|
$0.449
|
|
|
$0.30
|
|
|
Ver
|
|
|
$0.384
|
|
|
$0.354
|
|
|
$0.297
|
|
|
$0.29
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
14.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
18 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
- IPB081N06L3 G
- Infineon Technologies
-
1:
$2.20
-
477En existencias
|
N.º de artículo de Mouser
726-IPB081N06L3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
|
|
477En existencias
|
|
|
$2.20
|
|
|
$1.40
|
|
|
$0.939
|
|
|
$0.778
|
|
|
$0.661
|
|
|
Ver
|
|
|
$0.636
|
|
|
$0.608
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
6.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
- BSC019N04NS G
- Infineon Technologies
-
1:
$2.32
-
339En existencias
-
10,000En pedido
|
N.º de artículo de Mouser
726-BSC019N04NSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
|
|
339En existencias
10,000En pedido
Existencias:
339 Se puede enviar inmediatamente
En pedido:
5,000 Se espera el 28/1/2027
5,000 Se espera el 16/6/2027
Plazo de entrega de fábrica:
52 Semanas
|
|
|
$2.32
|
|
|
$1.48
|
|
|
$0.992
|
|
|
$0.764
|
|
|
Ver
|
|
|
$0.578
|
|
|
$0.669
|
|
|
$0.642
|
|
|
$0.578
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
29 A
|
1.9 mOhms
|
- 20 V, 20 V
|
4 V
|
108 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 84A TDSON-8 OptiMOS
- BSC032NE2LS
- Infineon Technologies
-
1:
$1.50
-
3,067En existencias
|
N.º de artículo de Mouser
726-BSC032NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 84A TDSON-8 OptiMOS
|
|
3,067En existencias
|
|
|
$1.50
|
|
|
$0.922
|
|
|
$0.607
|
|
|
$0.477
|
|
|
$0.319
|
|
|
Ver
|
|
|
$0.408
|
|
|
$0.377
|
|
|
$0.316
|
|
|
$0.308
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
84 A
|
2.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 93A TDSON-8 OptiMOS 3
- BSC042N03LS G
- Infineon Technologies
-
1:
$1.51
-
4,097En existencias
-
5,000Se espera el 19/11/2026
|
N.º de artículo de Mouser
726-BSC042N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 93A TDSON-8 OptiMOS 3
|
|
4,097En existencias
5,000Se espera el 19/11/2026
|
|
|
$1.51
|
|
|
$0.949
|
|
|
$0.63
|
|
|
$0.492
|
|
|
$0.411
|
|
|
$0.374
|
|
Min.: 1
Mult.: 1
:
5,000
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
93 A
|
4.2 mOhms
|
- 20 V, 20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|