|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 78A TDSON-8 OptiMOS
- BSC0904NSI
- Infineon Technologies
-
1:
$1.16
-
9,773En existencias
-
Fin de vida útil
|
N.º de artículo de Mouser
726-BSC0904NSI
Fin de vida útil
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 78A TDSON-8 OptiMOS
|
|
9,773En existencias
|
|
|
$1.16
|
|
|
$0.727
|
|
|
$0.478
|
|
|
$0.371
|
|
|
$0.26
|
|
|
Ver
|
|
|
$0.307
|
|
|
$0.246
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
78 A
|
3.7 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
37 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC011N03LS
- Infineon Technologies
-
1:
$2.11
-
25,376En existencias
|
N.º de artículo de Mouser
726-BSC011N03LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
25,376En existencias
|
|
|
$2.11
|
|
|
$1.35
|
|
|
$0.935
|
|
|
$0.792
|
|
|
$0.587
|
|
|
Ver
|
|
|
$0.691
|
|
|
$0.578
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
230 A
|
1.1 mOhms
|
- 20 V, 20 V
|
2 V
|
72 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 63A TDSON-8 OptiMOS 3
- BSC109N10NS3 G
- Infineon Technologies
-
1:
$2.10
-
3,717En existencias
|
N.º de artículo de Mouser
726-BSC109N10NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 63A TDSON-8 OptiMOS 3
|
|
3,717En existencias
|
|
|
$2.10
|
|
|
$1.35
|
|
|
$0.908
|
|
|
$0.723
|
|
|
Ver
|
|
|
$0.56
|
|
|
$0.674
|
|
|
$0.651
|
|
|
$0.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
63 A
|
10.9 mOhms
|
- 20 V, 20 V
|
3.5 V
|
35 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
- BSC520N15NS3 G
- Infineon Technologies
-
1:
$1.49
-
7,781En existencias
-
10,000Se espera el 30/7/2026
|
N.º de artículo de Mouser
726-BSC520N15NS3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 21A TDSON-8 OptiMOS 3
|
|
7,781En existencias
10,000Se espera el 30/7/2026
|
|
|
$1.49
|
|
|
$0.972
|
|
|
$0.666
|
|
|
$0.539
|
|
|
$0.417
|
|
|
Ver
|
|
|
$0.496
|
|
|
$0.415
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
21 A
|
52 mOhms
|
- 20 V, 20 V
|
3 V
|
8.7 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ019N03LS
- Infineon Technologies
-
1:
$1.96
-
10,958En existencias
|
N.º de artículo de Mouser
726-BSZ019N03LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
10,958En existencias
|
|
|
$1.96
|
|
|
$1.25
|
|
|
$0.866
|
|
|
$0.734
|
|
|
$0.544
|
|
|
Ver
|
|
|
$0.64
|
|
|
$0.535
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
149 A
|
2 mOhms
|
- 20 V, 20 V
|
2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
- BSZ035N03MS G
- Infineon Technologies
-
1:
$1.36
-
6,218En existencias
|
N.º de artículo de Mouser
726-BSZ035N03MSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3M
|
|
6,218En existencias
|
|
|
$1.36
|
|
|
$0.858
|
|
|
$0.568
|
|
|
$0.466
|
|
|
$0.334
|
|
|
Ver
|
|
|
$0.403
|
|
|
$0.369
|
|
|
$0.319
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
113 A
|
3.4 mOhms
|
- 20 V, 20 V
|
2 V
|
56 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
- BSZ050N03LS G
- Infineon Technologies
-
1:
$1.03
-
6,251En existencias
|
N.º de artículo de Mouser
726-BSZ050N03LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TSDSON-8 OptiMOS 3
|
|
6,251En existencias
|
|
|
$1.03
|
|
|
$0.638
|
|
|
$0.416
|
|
|
$0.32
|
|
|
$0.228
|
|
|
Ver
|
|
|
$0.29
|
|
|
$0.269
|
|
|
$0.217
|
|
|
$0.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
40 A
|
6.2 mOhms
|
- 20 V, 20 V
|
2.2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
- BSZ0902NS
- Infineon Technologies
-
1:
$1.34
-
5,862En existencias
|
N.º de artículo de Mouser
726-BSZ0902NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TDSON-8 OptiMOS
|
|
5,862En existencias
|
|
|
$1.34
|
|
|
$0.841
|
|
|
$0.557
|
|
|
$0.435
|
|
|
Ver
|
|
|
$0.30
|
|
|
$0.369
|
|
|
$0.362
|
|
|
$0.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
106 A
|
2.8 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
- IPB108N15N3 G
- Infineon Technologies
-
1:
$3.90
-
2,683En existencias
|
N.º de artículo de Mouser
726-IP726-B108N15N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 83A D2PAK-2 OptiMOS 3
|
|
2,683En existencias
|
|
|
$3.90
|
|
|
$2.59
|
|
|
$1.86
|
|
|
$1.69
|
|
|
$1.40
|
|
|
Ver
|
|
|
$1.39
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
83 A
|
10.8 mOhms
|
- 20 V, 20 V
|
2 V
|
41 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8 OptiMOS 3
- BSC031N06NS3 G
- Infineon Technologies
-
1:
$2.99
-
12,350En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC031N06NS3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8 OptiMOS 3
|
|
12,350En existencias
|
|
|
$2.99
|
|
|
$1.94
|
|
|
$1.34
|
|
|
$1.12
|
|
|
Ver
|
|
|
$0.911
|
|
|
$1.07
|
|
|
$1.04
|
|
|
$0.911
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.1 mOhms
|
- 20 V, 20 V
|
4 V
|
130 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
- BSC060N10NS3 G
- Infineon Technologies
-
1:
$2.72
-
16,231En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC060N10NS3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 3
|
|
16,231En existencias
|
|
|
$2.72
|
|
|
$1.74
|
|
|
$1.19
|
|
|
$0.987
|
|
|
$0.797
|
|
|
Ver
|
|
|
$0.939
|
|
|
$0.776
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
5.3 mOhms
|
- 20 V, 20 V
|
2 V
|
68 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
- IPB081N06L3 G
- Infineon Technologies
-
1:
$2.03
-
522En existencias
|
N.º de artículo de Mouser
726-IPB081N06L3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
|
|
522En existencias
|
|
|
$2.03
|
|
|
$1.30
|
|
|
$0.898
|
|
|
$0.761
|
|
|
$0.635
|
|
|
Ver
|
|
|
$0.586
|
|
|
$0.555
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
6.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
29 nC
|
- 55 C
|
+ 175 C
|
79 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 120A D2PAK-2 OptiMOS 3
- IPB029N06N3 G
- Infineon Technologies
-
1:
$2.99
-
261En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPB029N06N3G
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 120A D2PAK-2 OptiMOS 3
|
|
261En existencias
|
|
|
$2.99
|
|
|
$1.93
|
|
|
$1.38
|
|
|
$1.16
|
|
|
$0.989
|
|
|
Ver
|
|
|
$0.939
|
|
|
$0.933
|
|
|
$0.908
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
120 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
165 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
- BSC019N04NS G
- Infineon Technologies
-
1:
$1.85
-
265En existencias
-
5,000Se espera el 3/2/2027
|
N.º de artículo de Mouser
726-BSC019N04NSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 OptiMOS 3
|
|
265En existencias
5,000Se espera el 3/2/2027
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.794
|
|
|
$0.628
|
|
|
Ver
|
|
|
$0.49
|
|
|
$0.579
|
|
|
$0.57
|
|
|
$0.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
29 A
|
1.9 mOhms
|
- 20 V, 20 V
|
4 V
|
108 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 58A TDSON-8 OptiMOS
- BSC050NE2LS
- Infineon Technologies
-
1:
$1.06
-
10,250En existencias
|
N.º de artículo de Mouser
726-BSC050NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 58A TDSON-8 OptiMOS
|
|
10,250En existencias
|
|
|
$1.06
|
|
|
$0.661
|
|
|
$0.431
|
|
|
$0.332
|
|
|
$0.236
|
|
|
Ver
|
|
|
$0.30
|
|
|
$0.279
|
|
|
$0.225
|
|
|
$0.218
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
58 A
|
5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
10.4 nC
|
- 55 C
|
+ 150 C
|
28 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC067N06LS3 G
- Infineon Technologies
-
1:
$1.96
-
20,052En existencias
|
N.º de artículo de Mouser
726-BSC067N06LS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
|
|
20,052En existencias
|
|
|
$1.96
|
|
|
$1.26
|
|
|
$0.868
|
|
|
$0.736
|
|
|
$0.625
|
|
|
$0.531
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
6.7 mOhms
|
- 20 V, 20 V
|
1.2 V
|
67 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0901NS
- Infineon Technologies
-
1:
$1.28
-
46En existencias
|
N.º de artículo de Mouser
726-BSC0901NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
46En existencias
|
|
|
$1.28
|
|
|
$0.803
|
|
|
$0.531
|
|
|
$0.437
|
|
|
Ver
|
|
|
$0.306
|
|
|
$0.377
|
|
|
$0.361
|
|
|
$0.306
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.6 mOhms
|
- 20 V, 20 V
|
1.2 V
|
44 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
- BSC0902NS
- Infineon Technologies
-
1:
$1.28
-
5,127En existencias
|
N.º de artículo de Mouser
726-BSC0902NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 100A TDSON-8 OptiMOS
|
|
5,127En existencias
|
|
|
$1.28
|
|
|
$0.803
|
|
|
$0.531
|
|
|
$0.437
|
|
|
$0.306
|
|
|
Ver
|
|
|
$0.377
|
|
|
$0.361
|
|
|
$0.298
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
- BSC0906NS
- Infineon Technologies
-
1:
$0.83
-
5,007En existencias
|
N.º de artículo de Mouser
726-BSC0906NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 63A TDSON-8 OptiMOS
|
|
5,007En existencias
|
|
|
$0.83
|
|
|
$0.518
|
|
|
$0.336
|
|
|
$0.257
|
|
|
$0.181
|
|
|
Ver
|
|
|
$0.21
|
|
|
$0.16
|
|
|
$0.155
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
63 A
|
4.5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
13 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 49A TDSON-8 OptiMOS 3
- BSC093N04LS G
- Infineon Technologies
-
1:
$0.98
-
42,178En existencias
|
N.º de artículo de Mouser
726-BSC093N04LSG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 49A TDSON-8 OptiMOS 3
|
|
42,178En existencias
|
|
|
$0.98
|
|
|
$0.602
|
|
|
$0.412
|
|
|
$0.324
|
|
|
$0.211
|
|
|
Ver
|
|
|
$0.27
|
|
|
$0.25
|
|
|
$0.20
|
|
|
$0.188
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
49 A
|
9.3 mOhms
|
- 20 V, 20 V
|
1.2 V
|
18 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
- BSC100N06LS3 G
- Infineon Technologies
-
1:
$1.71
-
18,110En existencias
|
N.º de artículo de Mouser
726-BSC100N06LS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A TDSON-8 OptiMOS 3
|
|
18,110En existencias
|
|
|
$1.71
|
|
|
$1.09
|
|
|
$0.723
|
|
|
$0.592
|
|
|
Ver
|
|
|
$0.427
|
|
|
$0.519
|
|
|
$0.504
|
|
|
$0.427
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
7.8 mOhms
|
- 20 V, 20 V
|
1.2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TDSON-8 OptiMOS 3
- BSC190N15NS3 G
- Infineon Technologies
-
1:
$2.86
-
4,303En existencias
|
N.º de artículo de Mouser
726-BSC190N15NS3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 150V 50A TDSON-8 OptiMOS 3
|
|
4,303En existencias
|
|
|
$2.86
|
|
|
$1.85
|
|
|
$1.32
|
|
|
$1.11
|
|
|
Ver
|
|
|
$0.868
|
|
|
$1.03
|
|
|
$0.868
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
150 V
|
50 A
|
16 mOhms
|
- 20 V, 20 V
|
2 V
|
31 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSF G
- Infineon Technologies
-
1:
$1.75
-
1,599En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
1,599En existencias
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.739
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.437
|
|
|
$0.531
|
|
|
$0.515
|
|
|
$0.437
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
- BSZ060NE2LS
- Infineon Technologies
-
1:
$0.97
-
12,859En existencias
|
N.º de artículo de Mouser
726-BSZ060NE2LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 25V 40A TDSON-8 OptiMOS
|
|
12,859En existencias
|
|
|
$0.97
|
|
|
$0.596
|
|
|
$0.408
|
|
|
$0.32
|
|
|
$0.209
|
|
|
Ver
|
|
|
$0.267
|
|
|
$0.247
|
|
|
$0.198
|
|
|
$0.187
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
40 A
|
6.5 mOhms
|
- 20 V, 20 V
|
2 V
|
9.1 nC
|
- 55 C
|
+ 150 C
|
26 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 36A TDSON-8 OptiMOS
- BSZ0909NS
- Infineon Technologies
-
1:
$0.86
-
402En existencias
-
10,000Se espera el 17/12/2026
|
N.º de artículo de Mouser
726-BSZ0909NS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 36A TDSON-8 OptiMOS
|
|
402En existencias
10,000Se espera el 17/12/2026
|
|
|
$0.86
|
|
|
$0.533
|
|
|
$0.346
|
|
|
$0.265
|
|
|
$0.163
|
|
|
Ver
|
|
|
$0.217
|
|
|
$0.161
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
34 V
|
36 A
|
12 mOhms
|
- 20 V, 20 V
|
2 V
|
13 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|