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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R090CFD7XKSA1
- Infineon Technologies
-
1:
$5.02
-
818En existencias
|
N.º de artículo de Mouser
726-IPP60R090CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
818En existencias
|
|
|
$5.02
|
|
|
$2.62
|
|
|
$2.49
|
|
|
$2.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
25 A
|
90 mOhms
|
- 20 V, 20 V
|
3.5 V
|
51 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R125CFD7XKSA1
- Infineon Technologies
-
1:
$4.18
-
778En existencias
|
N.º de artículo de Mouser
726-IPP60R125CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
778En existencias
|
|
|
$4.18
|
|
|
$2.14
|
|
|
$2.01
|
|
|
$1.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
125 mOhms
|
- 20 V, 20 V
|
3.5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R070CFD7XKSA1
- Infineon Technologies
-
1:
$6.04
-
1,087En existencias
|
N.º de artículo de Mouser
726-IPP60R070CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,087En existencias
|
|
|
$6.04
|
|
|
$3.21
|
|
|
$2.93
|
|
|
$2.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
31 A
|
57 mOhms
|
- 20 V, 20 V
|
3.5 V
|
67 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
- IPP60R280CFD7XKSA1
- Infineon Technologies
-
1:
$2.78
-
212En existencias
-
500Se espera el 27/3/2026
|
N.º de artículo de Mouser
726-IPP60R280CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW
|
|
212En existencias
500Se espera el 27/3/2026
|
|
|
$2.78
|
|
|
$1.38
|
|
|
$1.25
|
|
|
$1.00
|
|
|
$0.984
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
237 mOhms
|
- 20 V, 20 V
|
3.5 V
|
18 nC
|
- 55 C
|
+ 150 C
|
52 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R145CFD7XKSA1
- Infineon Technologies
-
1:
$3.84
-
25En existencias
-
500Se espera el 15/10/2026
|
N.º de artículo de Mouser
726-IPP60R145CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
25En existencias
500Se espera el 15/10/2026
|
|
|
$3.84
|
|
|
$2.26
|
|
|
$1.71
|
|
|
$1.46
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
16 A
|
145 mOhms
|
- 20 V, 20 V
|
3.5 V
|
31 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R170CFD7XKSA1
- Infineon Technologies
-
1:
$3.06
-
1,199En existencias
|
N.º de artículo de Mouser
726-IPP60R170CFD7XKS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
1,199En existencias
|
|
|
$3.06
|
|
|
$1.53
|
|
|
$1.15
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
14 A
|
144 mOhms
|
- 20 V, 20 V
|
3.5 V
|
28 nC
|
- 55 C
|
+ 150 C
|
75 W
|
Enhancement
|
CoolMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
- IPP60R105CFD7XKSA1
- Infineon Technologies
-
500:
$1.95
-
Plazo de entrega no en existencias 8 Semanas
-
NRND
|
N.º de artículo de Mouser
726-IPP60R105CFD7XKS
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW
|
|
Plazo de entrega no en existencias 8 Semanas
|
|
Min.: 500
Mult.: 500
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
21 A
|
105 mOhms
|
- 20 V, 20 V
|
3.5 V
|
42 nC
|
- 55 C
|
+ 150 C
|
106 W
|
Enhancement
|
|
Tube
|
|
