onsemi NTMFS0D7N04XM Single N-Channel Power MOSFET
onsemi NTMFS0D7N04XM Single N-Channel Power MOSFET is a standard 40V gate level power MOSFET with leading on-resistance for motor driver applications. The lower on-resistance and gate charge can reduce conduction and driving losses. Good softness control for body diode reverse recovery can reduce voltage spike stress without an extra snubber circuit in an application.
Features
- Low RDS(on) to minimize conduction losses
- Low capacitance to minimize driver losses
- Small footprint (5mm x 6mm) with compact design
- Pb-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- Motor drives
- Battery protection
- O-rings
Specifications
- 40V maximum drain-to-source voltage
- ±20V maximum gate-to-source voltage
- 38.5A to 323A maximum continuous drain current range
- 134W maximum power dissipation
- 2201A maximum pulsed drain current
- 202A maximum body diode source current
- 987mJ maximum single avalanche energy
- 72.1nC typical total gate charge
- 13.6nC typical threshold gate charge
- 20.6nC typical gate-to-source charge
- 13.3nC typical gate-to-drain charge
- 139nC typical reverse recovery charge
- -55°C to +175°C operating junction temperature range
- Typical switching time
- 25.8ns turn-on delay
- 8.12ns rise
- 39.1ns turn-off delay
- 6.32ns fall
- Typical capacitances
- 4621pF input
- 3328pF output
- 68.2pF reverse transfer
- Thermal resistance
- 1.11°C/W junction-to-case
- 39.3°C/W junction-to-ambient
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Publicado: 2024-02-19
| Actualizado: 2024-06-14