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Vishay Dual N-Channel TrenchFET® Power MOSFETs

Vishay Siliconix Dual N-Channel TrenchFET® Power MOSFETs offer co-packaged MOSFETs to reduce space and increase performance over two discrete. These Dual N-Channel TrenchFET Power MOSFETs combine two MOSFETs into a compact package. By combining the devices into one package the Vishay Siliconix Dual N-Channel TrenchFET Power MOSFETs simplify the layout, reduces parasitic inductance from PCB traces, increases efficiency, and reduces ringing. Typical applications include system power, POL, and synchronous buck converters in notebooks.

Features

  • TrenchFET Power MOSFETs
  • 100% Rg and UIS Tested
  • Halogen-free according to IEC 61249-2-21 definition
  • Compliant to RoHS Directive 2002/95/EC

Applications

  • System power
  • Notebook
  • Servers
  • POL
  • Synchronous Buck Converter

Associated Products

Vishay Semiconductors TrenchFET® Gen III Power MOSFETs

Offers low on-resistance and on-resistance times gate charge.

Learn Moreacerca de Vishay Semiconductors TrenchFET® Gen III Power MOSFETs View Productsrelacionado con Vishay Semiconductors TrenchFET® Gen III Power MOSFETs

Vishay / Siliconix TrenchFET® Gen IV MOSFETs

Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.

Learn Moreacerca de Vishay / Siliconix TrenchFET® Gen IV MOSFETs View Productsrelacionado con Vishay / Siliconix TrenchFET® Gen IV MOSFETs
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N.º de artículo Paquete / Cubierta Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Dp - Disipación de potencia Hoja de datos
SIZ340DT-T1-GE3 PowerPAIR-3x3-8 30 V 30 A, 40 A 9.5 mOhms, 5.1 mOhms 16.7 W, 31 W SIZ340DT-T1-GE3 Hoja de datos
SIZ998DT-T1-GE3 PowerPAIR-6x5-8 30 V 20 A, 60 A 4.7 mOhms, 2.2 mOhms 20.2 W, 32.9 W SIZ998DT-T1-GE3 Hoja de datos
Publicado: 2012-01-24 | Actualizado: 2024-08-15