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Vishay Semiconductors VS-HOT200C080 200A 80V Power MOSFET Module

Vishay Semiconductor VS-HOT200C080 200A 80V Power MOSFET Module is an integrated device that features half-bridge MOSFETs with best-in-class RDS(ON) in a compact transfer-mold FlatPAK HC0 package. This device has a drain-to-source voltage (VDSS) of 80V and a continuous drain current (ID) of 195A at +80°C. To increase efficiency, the low on-resistance of the power module’s MOSFETs reduces conduction losses by 32% compared to competing solutions. The device reduces board space requirements by up to 15% compared to standard discrete solutions. The Vishay Semiconductor VS-HOT200C080 integrates 80V MOSFETs in a half-bridge configuration, a shunt resistor for current reading, bypass capacitors for improved switching performance, and an NTC for temperature sensing.

Features

  • Insulated 30mm x 22.8mm transfer-mold FlatPAK HC0 package
  • 80V drain to source voltage
  • 0.45mΩ (typ.) on-resistance, Q1 (chip level) [RDS(ON)]
  • Continuous drain current of 195A at +80°C
  • Half bridge inverter
  • Current and temperature sensing
  • Electrically isolated exposed DBC substrate
  • C snubber for low EMI
  • Qualified according to AQG324 guidelines
  • PPAP capable
  • Epoxy compound UL 94V-0 certified

Applications

  • Automotive electrification (belt-start generators/recuperation systems for MHEVs)
  • Micro mobility (48V traction inverters)

Specifications

  • 1050A pulsed drain current (IDM) (TC = +25°C, tp = 250μs, square waveform)
  • 1530A pulsed source current (body diode) (ISM) (TC = +150°C, tp = 1ms, square waveform)
  • 194W power dissipation (PD) TC = +25°C
  • ±20V gate to source voltage (VGS)
  • 130nC (typ.) total gate charge (Qg) with ID = 80A, VDS = 48V, VGS = 0V/10V
  • 39nC (typ.) gate to source charge (Qgs) with ID = 80A, VDS = 48V, VGS = 0V/10V
  • 24nC (typ.) gate to drain (“Miller”) charge (Qgd) with ID = 80A, VDS = 48V, VGS = 0V/10V
  • -55 to +175°C junction temperature range (TJ)
  • -40 to +150°C storage temperature range (TStg)
  • -40 to +150°C operating temperature range (Top)

Additional Resources

Circuit Configuration

Schematic - Vishay Semiconductors VS-HOT200C080 200A 80V Power MOSFET Module

Dimensions

Mechanical Drawing - Vishay Semiconductors VS-HOT200C080 200A 80V Power MOSFET Module
Publicado: 2026-03-31 | Actualizado: 2026-04-02