Texas Instruments LMG3616 650V GaN Power FET

Texas Instruments LMG3616 650V GaN Power FET offers 270mΩ resistance with integrated driver and protection for switch-mode power-supply applications. This GaN FET incorporates a simplified design and reduces component count by integrating the GaN FET and gate driver in an 8mm by 5.3mm QFN package. The LMG3616 GaN FET features programmable turn-on slew rates that provide EMI and ringing control. The transistor's internal gate driver regulates the drive voltage for optimum GaN FET on-resistance. The internal driver reduces total gate inductance and GaN FET common-source inductance for improved switching performance, including Common-Mode Transient Immunity (CMTI). Typical applications include power supplies of AC/DC USB wall outlets, AC/DC auxiliary, television, SMPS for TV, mobile wall charger design, and USB wall power outlets.