STMicroelectronics STP50N60DM6 MDmesh™ DM6 Power MOSFET
STMicroelectronics STP50N60DM6 MDmesh™ DM6 Power MOSFET is a high-voltage N-channel power MOSFET with extremely high dv/dt ruggedness. This power MOSFET is a fast-recovery body diode that is Zener-protected and 100% avalanche-tested. The STMicroelectronics STP50N60DM6 power MOSFET offers low gate charge, low input capacitance, low resistance, and lower RDS(on) per area compared to the previous generation. This MOSFET combines very low recovery charge (Qrr), recovery time (trr), and excellent improvement in RDS(on) per area with one of the most effective switching behavior. The STP50N60DM6 MDmesh DM6 power MOSFET is ideal for switching applications.Features
- Fast-recovery body diode
- Lower RDS(on) per area compared to the previous generation
- Low gate charge, input capacitance, and resistance
- 100% avalanche tested
- Extremely high dv/dt ruggedness
- Zener-protected
Overview
Publicado: 2020-08-12
| Actualizado: 2025-01-14
