Vishay / Siliconix SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs

Vishay / Siliconix SiSS52DN and SiSS54DN N-Channel TrenchFET Gen V Power MOSFETs enable higher power density with very low RDS(on). These power MOSFETs offer 30V VDS and very low RDS x Qg Figure-of-Merit (FOM). The Vishay / Siliconix SiSS52DN N-Channel MOSFET typically features 162A ID and 19.9nC Qg. Meanwhile, the SiSS54DN N-Channel MOSFET typically features 185.6A ID and 21nC Qg. This 100% Rg and Unclamped Inductive Switching (UIS) tested MOSFET comes in a thermally enhanced compact PowerPAK® 1212-8S package with a single configuration. Typical applications include DC/DC converters, Point-of-Loads (POLs), synchronous rectification, power and load switches, and battery management.

Features

  • TrenchFET® Gen V power MOSFET
  • Very low RDS x Qg Figure-of-Merit (FOM)
  • Enables higher power density with very low RDS(on) 
  • Thermally enhanced compact PowerPAK® 1212-8S package with a single configuration
  • 100% Rg and UIS tested

Applications

  • DC/DC converters
  • Point-of-Loads (POLs)
  • Synchronous rectification
  • Battery management
  • Power and load switches

Package Style

Application Circuit Diagram - Vishay / Siliconix SiSS52DN & SiSS54DN N-Ch TrenchFET® Gen V MOSFETs
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N.º de artículo Hoja de datos Paquete / Cubierta Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Qg - Carga de puerta Dp - Disipación de potencia
SIJH5100E-T1-GE3 SIJH5100E-T1-GE3 Hoja de datos PowerPAK-4 100 V 277 A 1.89 mOhms 85 nC 333 W
SIR5607DP-T1-RE3 SIR5607DP-T1-RE3 Hoja de datos SO-8 60 V 90.9 A 7 mOhms 31.7 nC 104 W
SISS54DN-T1-GE3 SISS54DN-T1-GE3 Hoja de datos PowerPAK-1212-8S 30 V 185.6 A 1.06 mOhms 47.5 nC 65.7 W
SISS52DN-T1-GE3 SISS52DN-T1-GE3 Hoja de datos PowerPAK1212-8S 30 V 162 A 1.2 mOhms 65 nC 57 W
Publicado: 2020-10-06 | Actualizado: 2024-12-12