SemiQ 1200V SiC MOSFET Six-Pack Modules
SemiQ 1200V SiC MOSFET Six-Pack Modules are highly efficient modules designed to boost cost-efficiency and allow more compact system-level designs. These SemiQ high-speed switching SiC MOSFETs implement a planar technology with rugged gate oxide and feature a reliable body diode. These design elements are arranged in a three-phase bridge topology. 1200V SiC MOSFET Six-Pack Modules also feature split DC negative terminals, press-fit terminal connections, and a Kelvin reference for stable operation. The high-power-density modules offer low switching losses and low junction-to-case thermal resistance. All parts are tested beyond 1350V with 100% wafer-level burn-in (WLBI).Features
- High-speed switching SiC MOSFETs
- Reliable body diode
- All parts tested to >1350V
- Kelvin reference for stable operation
- Press-fit terminal connections
- Split DC negative terminals
Applications
- AC/DC converters
- Power-factor correction (PFC) boost converters
- Battery chargers
- Energy storage systems
- Motor drives
Specifications
- 30A current
- 1200VDC voltage rating
- 263W power dissipation
- -40°C to +175°C junction temperature range
- B2 package
Schematic
Publicado: 2025-04-18
| Actualizado: 2025-07-14
