ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs

ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs are AEC-Q101-rated automotive IGBTs available in 1200V and 650V variants. These IGBTs deliver class-leading low conduction loss that reduces the size and improves the efficiency of applications. The RGS IGBTs utilize original trench-gate and thin-wafer technologies. These technologies help to achieve low collector-emitter saturation voltage (VCE(sat)) with reduced switching losses. ROHM Semiconductor RGS IGBTs provide increased energy savings in various high voltage and high current applications.

Features

  • Class-leading low conduction loss
  • High efficiency
  • Reduce size
  • Available in both 1200V and 600V ratings
  • Utilize trench-gate and thin-wafer technologies
  • Offer low collector-emitter saturation voltage
  • Reduced switching losses
  • Increase the energy savings
  • AEC-Q101 qualified
  • TO-247N package

Applications

  • General inverter for automotive and industrial use
  • Positive Temperature Coefficient (PTC) heater
  • Electric compressors

Performance Graphs

Performance Graph - ROHM Semiconductor RGS Field Stop Trench Automotive IGBTs
Publicado: 2020-07-07 | Actualizado: 2024-10-01