onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Modules
onsemi NXH240B120H3Q1x1G Si/SiC Hybrid Power Integrated Modules (PIMs) contain a three-channel 1200V IGBT + SiC Boost module and an NTC thermistor. Each channel consists of a fast-switching 80A IGBT, a 30A SiC diode, a bypass diode, and an IGBT protection diode. Integrated field stop trench IGBTs and SiC diodes provide lower conduction losses and switching losses, enabling high efficiency and superior reliability.
Features
- 1200V ultra field stop IGBTs
- Low reverse recovery and fast switching SiC diodes
- Low inductive layout
- Press-fit pins/solder pins
- Thermistor
Applications
- Solar inverters
- Environmental Stress Screening (ESS)
Specifications
- IGBT (T11, T21, T31)
- 1200V maximum collector-emitter voltage
- ±20V maximum gate-emitter voltage
- 92A maximum continuous collector current
- 276A maximum pulsed collector current
- 266W maximum power dissipation
- Protection diode (D11, D21, D31)
- 1200V maximum peak repetitive reverse voltage
- 41A maximum continuous forward current
- 123A maximum repetitive peak forward current
- 54W maximum power dissipation
- 3000VRMS maximum isolation test voltage
- 12.7mm maximum creepage distance
- Silicon carbide boost diode (D12, D22, D32)
- 1200V maximum peak repetitive reverse voltage
- 37A maximum continuous forward current
- 111A maximum repetitive peak forward current
- 99W maximum power dissipation
- Bypass diode (D13, D23, D33)
- 1200V maximum peak repetitive reverse voltage
- 54A maximum continuous forward current
- 162A maximum repetitive peak forward current
- 64W maximum power dissipation
- -40°C to +150°V operating temperature range
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Publicado: 2024-01-26
| Actualizado: 2024-06-18