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onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs

onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs use the novel field stop 7th generation IGBT technology and a Gen7 diode in a 4-lead package. This 1200V collector-to-emitter (VCES) rated IGBT comes in a TO-247-4LD package. It is rated at 1.66V collector-to-emitter saturation voltage (VCE(SAT)) and a collector current (IC) of 60A. The onsemi AFGH4L60T120RWx-STD offers good performance with low on-state voltage and low switching losses for both hard and soft switching topologies in automotive applications.

Features

  • Extremely efficient trench with field stop technology
  • +175°C maximum junction temperature (TJ)
  • Short circuit rated and low saturation voltage
  • Fast switching and tightened parameter distribution
  • AEC-Q101 qualified, PPAP available upon request
  • Pb−free, Halogen-free/BFR-free, and RoHS-compliant

Applications

  • Automotive E-compressors
  • Automotive EV PTC heaters
  • OBCs

Specifications

  • 1200V collector-to-emitter voltage (VCE)
  • ±20V gate-to-emitter voltage (VGE)
  • ±30V transient gate-to-emitter voltage (VGE)
  • Collector current (IC) of 73A (TC = +25°C), 60A (TC = +100°C)
  • Power dissipation (PD) of 287W (TC = +25°C), 114W (TC = +100°C)
  • 180A pulsed collector current (ICM) (TC = +25°C)
  • Diode forward current (IF) of 84A (TC = +25°C), 60A (TC = +100°C)
  • 180A pulsed diode maximum forward current (IFM) (TC = +25°C)
  • -55°C to +175°C operating junction/storage temperature range (TJ, Tstg)
  • +260°C lead temperature for soldering purposes (TL)

Datasheets

Circuit Diagrams

Schematic - onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs
Schematic - onsemi AFGH4L60T120RWx-STD N-Channel Field Stop VII IGBTs
Publicado: 2025-09-30 | Actualizado: 2025-10-13