InterFET IFND89 N-Channel JFET

InterFET IFND89 N-Channel JFET offers low noise and high gain with integrated back-to-back diodes on the gate. It is packaged in either an SC70-5 or TO-72 package and is well suited to applications requiring high gain, low noise, and low pinch-off voltage (less than 0.9 volts). It provides over-voltage protection by clipping transient spikes, and the low current/low voltage capability makes the IFND89 ideal for battery operation.

Features

  • InterFET N0014EU geometry
  • Low 5nV/√Hz (typical) noise
  • Low 2pA (typical) leakage
  • Low 2.3pF (typical) Ciss
  • Surface mount, through hole, and bare die package options
  • RoHS compliant

Applications

  • Hearing aids
  • Mini microphones
  • Infrared detector amplifiers
  • Battery powered amplifiers
  • High-gain/low-noise amplifiers
  • Replacement for IFND89

Layout

InterFET IFND89 N-Channel JFET
Publicado: 2014-07-09 | Actualizado: 2023-01-19