Diotec Semiconductor DIF065SIC0x0 Silicon Carbide (SiC) MOSFETs
Diotec Semiconductor DIF065SIC0x0 Silicon Carbide (SiC) MOSFETs offer fast switching times and reduced noise levels in a SiC-wide bandgap material. The DIF065SIC0x0 features a low gate charge and on-state resistance. The devices operate at a 650V drain-source voltage with a junction temperature of -55°C to +175°C.
The Diotec DIF065SIC0x0 SiC MOSFETs are available in a TO-247-4L package and are ideal for various applications.
Features
- SiC wide bandgap material
- Large clearance and creepage
- Kelvin source for fast switching and reduced noise level at the gate
- Low on-state resistance
- Fast switching times
- Low gate charge
- Avalanche rated
- RoHS Compliant
Applications
- DC/DC converters
- Power supplies
- DC drives
- Power tools
- Commercial/industrial grade
- EV charging stations
- Solar inverter
- Battery charger
Specifications
- 650V drain-source voltage
- -10V to 22V, -5V to 18V gate-source-voltage
- 550W power dissipation
- 150A drain current continuous
- 150A (DIF065SIC030) source current continuous
- 260A (DIF065SIC030), 300A (DIF065SIC020) peak drain current
- Junction temperature of -55°C to +175°C
- Storage temperature of -55°C to +175°C
Datasheets
Typical Application
Publicado: 2024-09-19
| Actualizado: 2025-01-20