Diodes Incorporated MMBT4401 Bipolar Junction Transistor
Diodes Incorporated MMBT4401 Bipolar Junction Transistor (BJT) with epitaxial planar die construction is a 40V NPN small signal transistor. The MMBT4401 is qualified to AEC-Q101 standards for high reliability, available in the SOT23 package. This transistor is constructed from molded plastic "Green" compound and complies with UL94V-0 flammability rating. Diodes Incorporated MMBT4401 features a wide storage and operating temperature range of -55ºC to 150ºC. This BJT is RoHS compliant. The MMBT4401 transistor is ideal for medium power amplification and switching.
Features
- Epitaxial planar die construction
- Complementary PNP type is MMBT4403
- Totally lead-free and fully RoHS compliant
- Halogen and antimony free “Green” device
- Qualified to AEC-Q101 standards for high reliability
- Production part approval process (PPAP) capable
Specifications
- 60V collector-base voltage
- 40V collector-emitter voltage
- 6.0V emitter-base voltage
- 1A peak collector current
- -55°C to +150°C operating and storage temperature range
- 6.5pF output capacitance
- 30pF input capacitance
Publicado: 2016-08-28
| Actualizado: 2022-03-11