3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations. The proprietary TAP SiC MOSFET technology offers improved performance, reliability, and avalanche robustness. The TAP architecture performs a multi-step e-field management profile to significantly reduce voltage stress and improve voltage blocking capabilities compared to trench and traditional-planar SiC MOSFETs. Navitas 3300V and 2300V SiC MOSFETs are ideal for AI data centers, grid and energy infrastructure, and industrial electrification, including energy storage, renewable, and megawatt-scale fast-charging applications.

Resultados: 8
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Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Paquete / Cubierta
Vds - Tensión disruptiva entre drenaje y fuente
Id - Corriente de drenaje continua
Rds On - Resistencia entre drenaje y fuente
Temperatura de trabajo mínima
Temperatura de trabajo máxima
Serie
Empaquetado
GeneSiC Semiconductor Módulos MOSFET 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module Plazo de entrega no en existencias 26 Semanas
$331.64
Min.: 48
Mult.: 48
2.3 kV 296 A N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor Módulos MOSFET 2300V 5.8m Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Plazo de entrega no en existencias 26 Semanas
$339.64
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor Módulos MOSFET 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module
Hoja de datos
Plazo de entrega no en existencias 26 Semanas
$480.88
Min.: 48
Mult.: 48
SiCPAK G+ 2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor Módulos MOSFET 2300V 8.0m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM
Hoja de datos
Plazo de entrega no en existencias 26 Semanas
$488.88
Min.: 48
Mult.: 48
2.3 kV 8 mOhms - 55 C + 150 C N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4
GeneSiC Semiconductor Módulos MOSFET 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Plazo de entrega no en existencias 26 Semanas
$334.52
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H11MT23GB4-T
GeneSiC Semiconductor Módulos MOSFET 2300V 11.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Plazo de entrega no en existencias 26 Semanas
$342.52
Min.: 48
Mult.: 48
2.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4
GeneSiC Semiconductor Módulos MOSFET 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module Plazo de entrega no en existencias 26 Semanas
$464.62
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray
GeneSiC Semiconductor G4H22MT33GB4-T
GeneSiC Semiconductor Módulos MOSFET 3300V 22.5m Full-Bridge / Dual-Half-Bridge SiCPAK G+ SiC Power Module, with Pre-Applied TIM Plazo de entrega no en existencias 26 Semanas
$472.62
Min.: 48
Mult.: 48
3.3 kV N-Channel Silicon Carbide (SiC) Power MOSFET Tray