TRSx65H SiC Schottky Barrier Diodes

Toshiba TRSx65H Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs) are 650V devices based on third-generation technology utilizing Schottky metal. These components optimize the junction barrier Schottky (JBS) structure of the second-generation products, lowering the electric field at the Schottky interface and reducing leakage current, delivering enhanced efficiency. TRSx65H achieves a 17% lower forward voltage (1.2V typical) and improves trade-offs between the forward voltage and the total capacitive charge (17nC typical) than 2nd-Gen devices. With an enhanced forward voltage and reverse current ratio, a typical 1.1µA insulation resistance is achieved. Other features include forward DC current of up to 12A and square-wave non-repetitive surge currents of up to 640A.

Resultados: 12
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Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad.
Cantidad RoHS Modelo ECAD Estilo de montaje
Paquete / Cubierta
If - Corriente directa
Vrrm - Tensión inversa repetitiva
Vf - Tensión directa
Ifsm - Sobrecorriente en sentido directo
Ir - Corriente inversa
Empaquetado
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A DFN8x8
Hoja de datos
6,822En existencias
Cinta cortada
$2.33
$1.13
$1.02
$0.976
Envase tipo carrete
$0.976
$0.676
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 4 A 650 V 1.2 V 230 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A DFN8x8
Hoja de datos
4,789En existencias
Cinta cortada
$2.76
$1.36
$1.22
$1.13
Envase tipo carrete
$1.13
$0.85
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 6 A 650 V 1.2 V 310 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A DFN8x8
Hoja de datos
2,134En existencias
Cinta cortada
$3.32
$1.73
$1.49
$1.34
Envase tipo carrete
$1.12
$1.04
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 8 A 650 V 1.2 V 410 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A DFN8x8
Hoja de datos
1,933En existencias
Cinta cortada
$3.69
$1.97
$1.69
$1.56
Envase tipo carrete
$1.19
$1.17
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 10 A 650 V 1.2 V 510 A 2 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 3A TO-220-2L
Hoja de datos
1En existencias
$2.54
$1.48
$0.916
$0.846
Min.: 1
Mult.: 1
Through Hole TO-220-2L 3 A 650 V 1.2 V 170 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A DFN8x8
Hoja de datos
1,033En existencias
Cinta cortada
$3.82
$2.23
$1.82
$1.77
Envase tipo carrete
$1.77
$1.33
Min.: 1
Mult.: 1
: 2,500
SMD/SMT DFN-8 12 A 650 V 1.2 V 640 A 2.4 uA Reel, Cut Tape
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 10A TO-220-2L
Hoja de datos
50En existencias
$3.48
$1.75
$1.68
$1.27
Ver
Min.: 1
Mult.: 1
Through Hole TO-220-2L 10 A 650 V 1.2 V 510 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 12A TO-220-2L
Hoja de datos
63En existencias
150En pedido
$3.81
$2.31
$1.92
Min.: 1
Mult.: 1
Through Hole TO-220-2L 12 A 650 V 1.2 V 640 A 2.4 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 4A TO-220-2L
Hoja de datos
208En existencias
$2.33
$1.13
$1.12
$0.968
Min.: 1
Mult.: 1
Through Hole TO-220-2L 4 A 650 V 1.2 V 230 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 6A TO-220-2L
Hoja de datos
127En existencias
$2.75
$1.35
$1.34
$1.22
Min.: 1
Mult.: 1
Through Hole TO-220-2L 6 A 650 V 1.2 V 310 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 8A TO-220-2L
Hoja de datos
21En existencias
$3.31
$1.64
$1.47
$1.46
Min.: 1
Mult.: 1
Through Hole TO-220-2L 8 A 650 V 1.2 V 410 A 2 uA Tube
Toshiba Diodos Schottky de SiC G3 SiC-SBD 650V 2A TO-220-2L
Hoja de datos
172En pedido
$2.21
$1.13
$0.805
$0.733
Min.: 1
Mult.: 1
Through Hole TO-220-2L 2 A 650 V 1.2 V 120 A 2 uA Tube