CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

Resultados: 186
Seleccionar Imagen N.° de pieza Fabricante: Descripción Hoja de datos Disponibilidad Precio: (USD) Filtre los resultados en la tabla por precio unitario en función de su cantidad. Cantidad RoHS Modelo ECAD Tecnología Estilo de montaje Paquete / Cubierta Polaridad del transistor Número de canales Vds - Tensión disruptiva entre drenaje y fuente Id - Corriente de drenaje continua Rds On - Resistencia entre drenaje y fuente Vgs - Tensión entre puerta y fuente Vgs th - Tensión umbral entre puerta y fuente Qg - Carga de puerta Temperatura de trabajo mínima Temperatura de trabajo máxima Dp - Disipación de potencia Modo canal Nombre comercial Empaquetado
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 64,583En existencias
$1.64
$0.774
$0.689
$0.545
$0.414
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 600 mOhms 16 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2,346En existencias
$12.99
$7.20
$6.87
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 50 A 34 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,768En existencias
Cinta cortada
$3.37
$1.69
$1.52
$1.23
$1.20
Envase tipo carrete
$1.13
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 13 A 310 mOhms 20 V 2.5 V 30 nC - 55 C + 150 C 84 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS 998En existencias
$12.13
$7.80
$6.81
$6.21
Min.: 1
Mult.: 1
Si Through Hole TO-220FP-3 N-Channel 1 Channel 650 V 18 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 323En existencias
$10.37
$6.93
$6.41
$6.32
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 50 A 40 mOhms 20 V 3 V 107 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 46A TO220-3 CoolMOS C7 743En existencias
$12.19
$8.82
$7.35
$6.54
$6.19
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 46 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 227 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 6,555En existencias
Cinta cortada
$3.33
$1.76
$1.42
$1.22
$1.20
Envase tipo carrete
$1.20
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 13 A 180 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2,138En existencias
Cinta cortada
$3.71
$1.89
$1.71
$1.39
$1.37
Envase tipo carrete
$1.31
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 650 V 13 A 168 mOhms 20 V 3 V 23 nC - 55 C + 150 C 72 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1,029En existencias
Cinta cortada
$9.02
$4.93
$4.53
$4.50
Envase tipo carrete
$4.25
Min.: 1
Mult.: 1
: 1,000
Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 35 A 60 mOhms 20 V 1.7 V 68 nC - 55 C + 150 C 162 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 2,280En existencias
Cinta cortada
$4.04
$2.34
$1.84
$1.57
$1.51
Envase tipo carrete
$1.42
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 13 A 185 mOhms 20 V 3 V 24 nC - 40 C + 150 C 77 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1,158En existencias
Cinta cortada
$7.83
$3.51
Envase tipo carrete
$3.51
Min.: 1
Mult.: 1
: 1,700
Si SMD/SMT HDSOP-10 N-Channel 1 Channel 600 V 29 A 80 mOhms 20 V 3 V 42 nC - 55 C + 150 C 174 W Enhancement Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 8,670En existencias
Cinta cortada
$1.79
$0.851
$0.759
$0.598
Envase tipo carrete
$0.486
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 4.5 A 1 Ohms 20 V 2.5 V 11 nC - 55 C + 150 C 37 W Enhancement CoolMOS Reel, Cut Tape

Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3,510En existencias
$7.06
$3.68
$3.37
$3.07
Min.: 1
Mult.: 1
Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 37 A 69 mOhms 20 V 3 V 51 nC - 55 C + 150 C 129 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 4,850En existencias
$1.71
$0.809
$0.721
$0.566
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 8.5 A 490 mOhms 30 V 2.5 V 10.5 nC - 40 C + 150 C 24.9 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 9,128En existencias
Cinta cortada
$1.39
$0.652
$0.58
$0.452
Envase tipo carrete
$0.362
Ver
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 2.5 A 2 Ohms 20 V 2.5 V 7.5 nC - 55 C + 150 C 22 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 4,448En existencias
Cinta cortada
$2.17
$1.05
$0.937
$0.745
$0.691
Envase tipo carrete
$0.62
Min.: 1
Mult.: 1
: 2,500
Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 800 V 7 A 640 mOhms 20 V 2.5 V 17 nC - 55 C + 150 C 51 W Enhancement CoolMOS Reel, Cut Tape
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1,872En existencias
$4.43
$2.27
$2.06
$1.68
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 26 A 100 mOhms 20 V 3 V 36 nC - 55 C + 150 C 28 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 3,453En existencias
Cinta cortada
$8.07
$4.38
$4.02
$3.91
$3.69
Envase tipo carrete
$3.69
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 41 A 53 mOhms 20 V 3 V 67 nC - 40 C + 150 C 201 W Enhancement CoolMOS Reel, Cut Tape, MouseReel
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 808En existencias
$5.69
$3.52
$3.09
$2.83
$2.82
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 22 A 85 mOhms 20 V 3 V 42 nC - 55 C + 150 C 110 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER BEST IN CLASS 168En existencias
$12.22
$8.84
$7.37
$6.56
$6.21
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 18 A 40 mOhms 20 V 3 V 93 nC - 55 C + 150 C 35 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LOW POWER_NEW 1,266En existencias
$2.27
$1.10
$0.984
$0.75
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 800 V 6 A 770 mOhms 20 V 2.5 V 15 nC - 55 C + 150 C 26 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 850En existencias
$3.90
$1.98
$1.79
$1.45
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 13 A 155 mOhms 20 V 3 V 24 nC - 55 C + 150 C 68 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 688En existencias
$5.14
$2.66
$2.42
$2.12
$1.99
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 600 V 11 A 125 mOhms 20 V 3.5 V 36 nC - 55 C + 150 C 32 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) CONSUMER 1,649En existencias
$2.01
$0.964
$0.862
$0.694
Ver
Min.: 1
Mult.: 1
Si Through Hole TO-220-3 N-Channel 1 Channel 700 V 12.5 A 300 mOhms 30 V 2.5 V 16.4 nC - 40 C + 150 C 26.5 W Enhancement CoolMOS Tube
Infineon Technologies Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) HIGH POWER_NEW 1,578En existencias
Cinta cortada
$7.56
$4.06
$3.72
$3.57
$3.37
Envase tipo carrete
$3.37
Min.: 1
Mult.: 1
: 3,000
Si SMD/SMT VSON-4 N-Channel 1 Channel 600 V 33 A 66 mOhms 20 V 3.5 V 67 nC - 40 C + 150 C 189 W Enhancement CoolMOS Reel, Cut Tape