STGY80H65DFB

STMicroelectronics
511-STGY80H65DFB
STGY80H65DFB

Mfr.:

Description:
IGBTs Trench gte FieldStop IGBT 650V 80A
Complete Your Design

Lifecycle:
End of Life:
Scheduled for obsolescence and will be discontinued by the manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about STMicroelectronics STGY80H65DFB

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: IGBTs
RoHS:  
Si
Max247-3
Through Hole
Single
650 V
1.9 V
- 20 V, 20 V
120 A
469 W
- 55 C
+ 175 C
STGY80H65
Tube
Brand: STMicroelectronics
Continuous Collector Current Ic Max: 80 A
Gate-Emitter Leakage Current: 250 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 5 g
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Attributes selected: 0

Datasheet

PCN

Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
8541290100
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
85412999
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

In Stock: 28

Stock:
28 Can Ship Immediately
Quantities greater than 28 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$13.14 $13.14
$9.28 $92.80

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