|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
- STWA60N028T
- STMicroelectronics
-
1:
$7.07
-
328En existencias
-
1,200En pedido
-
Nuevo producto
|
N.º de artículo de Mouser
511-STWA60N028T
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 22 mOhm typ., 84 A STMESH trench T Power MOSFET
|
|
328En existencias
1,200En pedido
Existencias:
328 Se puede enviar inmediatamente
En pedido:
600 Se espera el 29/1/2027
600 Se espera el 12/2/2027
Plazo de entrega de fábrica:
26 Semanas
|
|
|
$7.07
|
|
|
$4.73
|
|
|
$3.80
|
|
|
$3.38
|
|
|
Ver
|
|
|
$2.78
|
|
|
$2.75
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
84 A
|
28 mOhms
|
30 V
|
4.2 V
|
164 nC
|
- 55 C
|
+ 150 C
|
481 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
$19.70
-
174En existencias
|
N.º de artículo de Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
174En existencias
|
|
|
$19.70
|
|
|
$15.01
|
|
|
$12.00
|
|
|
$12.00
|
|
Min.: 1
Mult.: 1
:
200
|
|
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
2 Channel
|
650 V
|
53 A
|
64 mOhms
|
25 V
|
4.75 V
|
80 nC
|
- 55 C
|
+ 150 C
|
424 W
|
Enhancement
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.061 Ohm 40 A Mdmesh M5
- STL57N65M5
- STMicroelectronics
-
1:
$12.69
-
2,439En existencias
|
N.º de artículo de Mouser
511-STL57N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.061 Ohm 40 A Mdmesh M5
|
|
2,439En existencias
|
|
|
$12.69
|
|
|
$7.27
|
|
|
$7.17
|
|
|
$7.03
|
|
|
$6.55
|
|
|
$6.55
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
650 V
|
22.5 A
|
61 mOhms
|
25 V
|
4 V
|
96 nC
|
- 55 C
|
+ 150 C
|
189 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
$20.40
-
172En existencias
|
N.º de artículo de Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
172En existencias
|
|
|
$20.40
|
|
|
$13.01
|
|
|
$12.14
|
|
|
$12.14
|
|
Min.: 1
Mult.: 1
:
200
|
|
|
Si
|
|
|
N-Channel
|
|
650 V
|
64 A
|
35 mOhms
|
|
|
|
|
|
|
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
- STW65N023M9-4
- STMicroelectronics
-
1:
$18.67
-
459En existencias
|
N.º de artículo de Mouser
511-STW65N023M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET
|
|
459En existencias
|
|
|
$18.67
|
|
|
$10.77
|
|
|
$10.76
|
|
|
$9.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
95 A
|
23 mOhms
|
30 V
|
4.2 V
|
230 nC
|
- 55 C
|
+ 150 C
|
463 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
- STW65N045M9-4
- STMicroelectronics
-
1:
$10.43
-
532En existencias
|
N.º de artículo de Mouser
511-STW65N045M9-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 39 mOhm typ., 54 A MDmesh M9 Power MOSFET
|
|
532En existencias
|
|
|
$10.43
|
|
|
$5.71
|
|
|
$5.57
|
|
|
$4.88
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
54 A
|
45 mOhms
|
30 V
|
4.2 V
|
80 nC
|
- 55 C
|
+ 150 C
|
312 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
- STL8N10F7
- STMicroelectronics
-
1:
$1.53
-
38,107En existencias
|
N.º de artículo de Mouser
511-STL8N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 17 mOhm typ., 8 A STripFET F7 Power MOSFET in a PowerFLAT 3.3x3
|
|
38,107En existencias
|
|
|
$1.53
|
|
|
$0.718
|
|
|
$0.639
|
|
|
$0.50
|
|
|
$0.471
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
17 mOhms
|
20 V
|
2.5 V
|
25 nC
|
- 55 C
|
+ 150 C
|
50 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
- STD80N340K6
- STMicroelectronics
-
1:
$4.61
-
2,368En existencias
|
N.º de artículo de Mouser
511-STD80N340K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 285 mOhm typ., 12 A MDmesh K6 Power MOSFET
|
|
2,368En existencias
|
|
|
$4.61
|
|
|
$2.37
|
|
|
$2.15
|
|
|
$1.84
|
|
|
$1.71
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
340 mOhms
|
10 V
|
3 V
|
17.8 nC
|
- 55 C
|
+ 150 C
|
92 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
- STL36DN6F7
- STMicroelectronics
-
1:
$1.52
-
41,498En existencias
|
N.º de artículo de Mouser
511-STL36DN6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Dual N-channel 60 V, 23 mOhm typ., 33 A STripFET F7 Power MOSFET in a PowerFLAT
|
|
41,498En existencias
|
|
|
$1.52
|
|
|
$0.716
|
|
|
$0.637
|
|
|
$0.499
|
|
|
$0.391
|
|
|
Ver
|
|
|
$0.498
|
|
|
$0.374
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
2 Channel
|
60 V
|
33 A
|
23 mOhms, 23 mOhms
|
20 V
|
2 V
|
8 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STD12N60DM2AG
- STMicroelectronics
-
1:
$3.41
-
2,353En existencias
|
N.º de artículo de Mouser
511-STD12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
2,353En existencias
|
|
|
$3.41
|
|
|
$2.21
|
|
|
$1.53
|
|
|
$1.28
|
|
|
$1.24
|
|
|
$1.11
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
440 mOhms
|
25 V
|
3 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh M5
- STB31N65M5
- STMicroelectronics
-
1:
$5.91
-
840En existencias
|
N.º de artículo de Mouser
511-STB31N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.124 Ohm 22 A MDmesh M5
|
|
840En existencias
|
|
|
$5.91
|
|
|
$3.34
|
|
|
$2.89
|
|
|
$2.42
|
|
|
$2.18
|
|
|
$2.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
22 A
|
148 mOhms
|
25 V
|
3 V
|
45 nC
|
- 55 C
|
+ 150 C
|
150 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
- STL10LN80K5
- STMicroelectronics
-
1:
$4.31
-
3,053En existencias
|
N.º de artículo de Mouser
511-STL10LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.59 Ohm typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VH
|
|
3,053En existencias
|
|
|
$4.31
|
|
|
$2.58
|
|
|
$2.10
|
|
|
$1.76
|
|
|
$1.67
|
|
|
Ver
|
|
|
$1.68
|
|
|
$1.54
|
|
Min.: 1
Mult.: 1
:
3,000
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-VHV-8
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
660 mOhms
|
30 V
|
5 V
|
15 nC
|
- 55 C
|
+ 150 C
|
42 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
- PD57018S-E
- STMicroelectronics
-
1:
$32.58
-
498En existencias
|
N.º de artículo de Mouser
511-PD57018S-E
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) RF POWER transistor, N-channel enhancement-mode, lateral Transistor metal-óxido-semiconductor de efecto de campo (MOSFET)
|
|
498En existencias
|
|
|
$32.58
|
|
|
$23.91
|
|
|
$22.79
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerSO-10RF-2
|
N-Channel
|
1 Channel
|
65 V
|
2.5 A
|
760 mOhms
|
20 V
|
2 V
|
|
- 65 C
|
+ 165 C
|
31.7 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
- STB30N80K5
- STMicroelectronics
-
1:
$8.51
-
1,094En existencias
|
N.º de artículo de Mouser
511-STB30N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
1,094En existencias
|
|
|
$8.51
|
|
|
$4.62
|
|
|
$4.25
|
|
|
$4.17
|
|
|
$3.88
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
24 A
|
180 mOhms
|
30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STB38N65M5
- STMicroelectronics
-
1:
$7.45
-
757En existencias
|
N.º de artículo de Mouser
511-STB38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
757En existencias
|
|
|
$7.45
|
|
|
$3.99
|
|
|
$3.66
|
|
|
$3.49
|
|
|
$3.25
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
30 A
|
95 mOhms
|
25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 50 Amp
- STB55NF06T4
- STMicroelectronics
-
1:
$3.38
-
3,679En existencias
|
N.º de artículo de Mouser
511-STB55NF06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 50 Amp
|
|
3,679En existencias
|
|
|
$3.38
|
|
|
$1.69
|
|
|
$1.53
|
|
|
$1.24
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
18 mOhms
|
20 V
|
2 V
|
60 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
- STB9NK90Z
- STMicroelectronics
-
1:
$6.12
-
1,288En existencias
|
N.º de artículo de Mouser
511-STB9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
|
|
1,288En existencias
|
|
|
$6.12
|
|
|
$3.22
|
|
|
$2.94
|
|
|
$2.77
|
|
|
$2.54
|
|
Min.: 1
Mult.: 1
:
1,000
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.3 Ohms
|
30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
- STD13N60DM2
- STMicroelectronics
-
1:
$2.47
-
3,084En existencias
|
N.º de artículo de Mouser
511-STD13N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.310 Ohm typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
3,084En existencias
|
|
|
$2.47
|
|
|
$1.21
|
|
|
$1.09
|
|
|
$0.864
|
|
|
$0.817
|
|
|
$0.732
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
310 mOhms
|
25 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
- STD13N65M2
- STMicroelectronics
-
1:
$2.33
-
3,053En existencias
|
N.º de artículo de Mouser
511-STD13N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
|
|
3,053En existencias
|
|
|
$2.33
|
|
|
$1.13
|
|
|
$0.921
|
|
|
$0.793
|
|
|
$0.687
|
|
|
Ver
|
|
|
$0.723
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
10 A
|
370 mOhms
|
25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.2 mOhm typ., 80 A STripFET F7 Power MOSFET in
- STD170N4F7AG
- STMicroelectronics
-
1:
$2.94
-
2,235En existencias
|
N.º de artículo de Mouser
511-STD170N4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.2 mOhm typ., 80 A STripFET F7 Power MOSFET in
|
|
2,235En existencias
|
|
|
$2.94
|
|
|
$1.90
|
|
|
$1.30
|
|
|
$1.06
|
|
|
$0.946
|
|
|
Ver
|
|
|
$0.981
|
|
|
$0.914
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
80 A
|
2.2 mOhms
|
20 V
|
2 V
|
63 nC
|
- 55 C
|
+ 175 C
|
172 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 35 Amp
- STD35NF06T4
- STMicroelectronics
-
1:
$1.98
-
5,459En existencias
|
N.º de artículo de Mouser
511-STD35NF06
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60 Volt 35 Amp
|
|
5,459En existencias
|
|
|
$1.98
|
|
|
$0.948
|
|
|
$0.847
|
|
|
$0.671
|
|
|
$0.599
|
|
|
$0.507
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
35 A
|
18 mOhms
|
20 V
|
2 V
|
60 nC
|
- 55 C
|
+ 175 C
|
55 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 950 VDSS <3.5 RDS 4A ID 90W Pw
- STD5N95K3
- STMicroelectronics
-
1:
$3.37
-
6,491En existencias
|
N.º de artículo de Mouser
511-STD5N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 950 VDSS <3.5 RDS 4A ID 90W Pw
|
|
6,491En existencias
|
|
|
$3.37
|
|
|
$2.04
|
|
|
$1.75
|
|
|
$1.53
|
|
|
$1.50
|
|
|
$1.42
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
950 V
|
4 A
|
3 Ohms
|
30 V
|
3 V
|
19 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
- STD80N240K6
- STMicroelectronics
-
1:
$5.95
-
2,544En existencias
|
N.º de artículo de Mouser
511-STD80N240K6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET in a DPAK package
|
|
2,544En existencias
|
|
|
$5.95
|
|
|
$3.12
|
|
|
$2.85
|
|
|
$2.59
|
|
|
$2.41
|
|
|
$2.41
|
|
Min.: 1
Mult.: 1
:
2,500
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 Ohms
|
30 V
|
4 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
105 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
- STF12N65M5
- STMicroelectronics
-
1:
$3.49
-
1,667En existencias
|
N.º de artículo de Mouser
511-STF12N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
|
|
1,667En existencias
|
|
|
$3.49
|
|
|
$2.03
|
|
|
$1.57
|
|
|
$1.31
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
8.5 A
|
430 mOhms
|
25 V
|
4 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 900V-1.1ohms Zener SuperMESH 8A
- STF9NK90Z
- STMicroelectronics
-
1:
$6.15
-
782En existencias
|
N.º de artículo de Mouser
511-STF9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 900V-1.1ohms Zener SuperMESH 8A
|
|
782En existencias
|
|
|
$6.15
|
|
|
$3.24
|
|
|
$2.96
|
|
|
$2.52
|
|
|
$2.47
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.3 Ohms
|
30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
