|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D6N04XMT1G
- onsemi
-
1:
$3.48
-
125En existencias
-
4,500Se espera el 18/6/2027
|
N.º de artículo de Mouser
863-NTMFS0D6N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
125En existencias
4,500Se espera el 18/6/2027
|
|
|
$3.48
|
|
|
$2.07
|
|
|
$1.59
|
|
|
$1.27
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
Máx.: 1,500
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
380 A
|
570 uOhms
|
20 V
|
3.5 V
|
86.4 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS0D7N04XMT1G
- onsemi
-
1:
$2.80
-
738En existencias
-
19,500En pedido
|
N.º de artículo de Mouser
863-NTMFS0D7N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
738En existencias
19,500En pedido
Existencias:
738 Se puede enviar inmediatamente
En pedido:
12,000 Se espera el 24/11/2026
7,500 Se espera el 13/10/2027
Plazo de entrega de fábrica:
53 Semanas
|
|
|
$2.80
|
|
|
$1.80
|
|
|
$1.25
|
|
|
$1.02
|
|
|
$0.85
|
|
|
$0.85
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
323 A
|
700 uOhms
|
20 V
|
3.5 V
|
72.1 nC
|
- 55 C
|
+ 175 C
|
134 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D1N04XMT1G
- onsemi
-
1:
$2.55
-
9En existencias
-
3,000Se espera el 6/10/2026
|
N.º de artículo de Mouser
863-NTMFS1D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
9En existencias
3,000Se espera el 6/10/2026
|
|
|
$2.55
|
|
|
$1.48
|
|
|
$1.11
|
|
|
$0.881
|
|
|
$0.76
|
|
|
$0.76
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
233 A
|
1.05 mOhms
|
20 V
|
3.5 V
|
49.1 nC
|
- 55 C
|
+ 175 C
|
104 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS1D3N04XMT1G
- onsemi
-
1:
$2.29
-
62En existencias
-
6,000Se espera el 23/10/2026
|
N.º de artículo de Mouser
863-NTMFS1D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
62En existencias
6,000Se espera el 23/10/2026
|
|
|
$2.29
|
|
|
$1.46
|
|
|
$0.979
|
|
|
$0.793
|
|
|
$0.711
|
|
|
$0.711
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
195 A
|
1.3 mOhms
|
20 V
|
3.5 V
|
38.5 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS2D3N04XMT1G
- onsemi
-
1:
$1.76
-
62En existencias
|
N.º de artículo de Mouser
863-NTMFS2D3N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
62En existencias
|
|
|
$1.76
|
|
|
$0.834
|
|
|
$0.744
|
|
|
$0.607
|
|
|
$0.492
|
|
|
Ver
|
|
|
$0.54
|
|
|
$0.473
|
|
|
$0.463
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
111 A
|
2.35 mOhms
|
20 V
|
3.5 V
|
22.1 nC
|
- 55 C
|
+ 175 C
|
53 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
- NTMFS3D1N04XMT1G
- onsemi
-
1:
$1.92
-
26En existencias
-
1,500Se espera el 16/10/2026
|
N.º de artículo de Mouser
863-NTMFS3D1N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL PACKAGE
|
|
26En existencias
1,500Se espera el 16/10/2026
|
|
|
$1.92
|
|
|
$1.19
|
|
|
$0.609
|
|
|
$0.511
|
|
|
$0.425
|
|
|
$0.425
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
83 A
|
3.1 mOhms
|
20 V
|
3.5 V
|
15.6 nC
|
- 55 C
|
+ 175 C
|
39 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D5N04XMT1G
- onsemi
-
1:
$3.84
-
16,500Se espera el 15/2/2028
|
N.º de artículo de Mouser
863-NTMFS0D5N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
16,500Se espera el 15/2/2028
|
|
|
$3.84
|
|
|
$2.24
|
|
|
$1.75
|
|
|
$1.44
|
|
|
$1.27
|
|
|
$1.27
|
|
Min.: 1
Mult.: 1
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
414 A
|
520 uOhms
|
20 V
|
3.5 V
|
97.5 nC
|
- 55 C
|
+ 175 C
|
163 W
|
Enhancement
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
- NTMFS0D4N04XMT1G
- onsemi
-
1:
$4.14
-
5,907En pedido
|
N.º de artículo de Mouser
863-NTMFS0D4N04XMT1G
|
onsemi
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 40V T10M IN S08FL HEFET GEN 2 PACKAGE
|
|
5,907En pedido
En pedido:
4,407 Se espera el 5/4/2027
1,500 Se espera el 12/4/2027
Plazo de entrega de fábrica:
53 Semanas
|
|
|
$4.14
|
|
|
$2.72
|
|
|
$1.91
|
|
|
$1.59
|
|
|
$1.59
|
|
Min.: 1
Mult.: 1
Máx.: 750
:
1,500
|
|
|
Si
|
SMD/SMT
|
DFN-5
|
N-Channel
|
1 Channel
|
40 V
|
509 A
|
420 uOhms
|
20 V
|
3.5 V
|
133 nC
|
- 55 C
|
+ 175 C
|
197 W
|
Enhancement
|
Reel, Cut Tape
|
|
