TP65H070G4RS-TR

Renesas Electronics
227-TP65H070G4RS-TR
TP65H070G4RS-TR

Mfr.:

Description:
GaN FETs 650V, 70mohm GaN FET in TOLT

Datasheet:
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Learn more about Renesas Electronics TP65H070G4RS-TR

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
TOLT-16
N-Channel
1 Channel
650 V
29 A
85 mOhms
- 20 V, + 20 V
4.8 V
9 nC
- 55 C
+ 150 C
96 W
Enhancement
SuperGaN
GaN
Brand: Renesas Electronics
Configuration: Single
Fall Time: 7.2 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Rise Time: 6.2 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 1300
Subcategory: Transistors
Typical Turn-Off Delay Time: 56 ns
Typical Turn-On Delay Time: 43.4 ns
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Attributes selected: 0

Datasheet

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Compliance Codes
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

TP65H070G4RS 650V SuperGaN® FET in TOLT

Renesas Electronics TP65H070G4RS 650V SuperGaN® FET in TOLT features an on-resistance RDS(on) of 72mΩ typical in a top-side-cooled, surface-mount TOLT package that meets the JEDEC standard MO-332. The TOLT package offers thermal management flexibility, especially in systems that do not allow for conventional surface-mount devices with bottom-side cooling. The TP65H070G4RS is a normally-off device that combines low-voltage silicon MOSFET and high-voltage GaN HEMT technologies to deliver superior reliability and performance. The Gen IV SuperGaN platform leverages advanced epitaxial (epi) and patented design technologies to streamline manufacturability and enhance efficiency compared to silicon. It achieves this by reducing gate charge, crossover loss, output capacitance, and reverse recovery charge. Renesas Electronics TP65H070G4RS 650V SuperGaN TOLT FET is ideal for datacom, industrial, computing, and other applications.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

In Stock: 1,659

Stock:
1,659 Can Ship Immediately
Factory Lead-Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
$-.--
Ext. Price:
$-.--
Est. Tariff:

Pricing (USD)

Qty. Unit Price
Ext. Price
$8.53 $8.53
$4.63 $46.30
$4.26 $426.00
$4.18 $2,090.00
Full Reel (Order in multiples of 1300)
$3.42 $4,446.00
$3.41 $8,866.00

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