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STPSC30H12CWL

STMicroelectronics

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See Product Specifications

Mouser #:

511-STPSC30H12CWL

Mfr. #:

STPSC30H12CWL

Mfr.:

STMicroelectronics

Description:

SiC Schottky Diodes 1200 V power Schottky silicon carbide diode

Complete Your Design

Lifecycle:

End of Life:

Scheduled for obsolescence and will be discontinued by the manufacturer.

Datasheet:

STPSC30H12CWL Datasheet (PDF)

ECAD Model:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC Schottky Diodes
RoHS:
Mounting Style:	Through Hole
Package / Case:	TO-247-LL-3
Configuration:	Dual
If - Forward Current:	15 A
Vrrm - Repetitive Reverse Voltage:	1.2 kV
Vf - Forward Voltage:	1.35 V
Ifsm - Forward Surge Current:	630 A
Ir - Reverse Current:	7.5 uA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Vr - Reverse Voltage:	800 V
Series:	STPSC30H12C
Packaging:	Tube
Brand:	STMicroelectronics
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	600
Subcategory:	Diodes & Rectifiers
Unit Weight:	6.100 g

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Attributes selected: 0

Filter Document:

Datasheet

STPSC30H12CWL Datasheet (PDF)

EOL

Product Discontinuation Notification 2025-7-29 (PDF)

PCN

Compliance Codes

CNHTS:: 8541590000
CAHTS:: 8541100090
USHTS:: 8541100080
JPHTS:: 854110090
KRHTS:: 8541109000
MXHTS:: 8541100101
ECCN:: EAR99

Origin Classifications

Country of Origin:: Philippines
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

FEATURED PRODUCTS

STMICROELECTRONICS

STPSC Schottky Silicon-Carbide Diodes

Superior physical characteristics over standard silicon, with 15% less forward voltage.

600V Power Schottky Silicon Carbide Diode

Ultrahigh performance power schottky diode manufactured using a silicon carbide substrate.

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In Stock: 243

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Pricing (USD)

Qty.	Unit Price	Ext. Price
	$15.00	$15.00
	$10.87	$108.70
	$9.08	$908.00
	$8.43	$5,058.00
	$7.78	$9,336.00
3,000	Quote