|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
- BSC118N10NS G
- Infineon Technologies
-
1:
$1.99
-
4,333En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC118N10NSG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 71A TDSON-8 OptiMOS 2
|
|
4,333En existencias
|
|
|
$1.99
|
|
|
$1.26
|
|
|
$0.856
|
|
|
$0.679
|
|
|
Ver
|
|
|
$0.594
|
|
|
$0.625
|
|
|
$0.594
|
|
|
$0.594
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
11 A
|
11.8 mOhms
|
- 20 V, 20 V
|
4 V
|
56 nC
|
- 55 C
|
+ 150 C
|
114 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD25CN10NGATMA1
- Infineon Technologies
-
1:
$1.74
-
15,387En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPD25CN10NGATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
15,387En existencias
|
|
|
$1.74
|
|
|
$1.11
|
|
|
$0.741
|
|
|
$0.585
|
|
|
$0.534
|
|
|
$0.495
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
35 A
|
19 mOhms
|
- 20 V, 20 V
|
3 V
|
23 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSFGATMA1
- Infineon Technologies
-
1:
$1.70
-
24,303En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFGATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
24,303En existencias
|
|
|
$1.70
|
|
|
$1.09
|
|
|
$0.725
|
|
|
$0.572
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.516
|
|
|
$0.488
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD33CN10NGATMA1
- Infineon Technologies
-
1:
$1.55
-
2,144En existencias
|
N.º de artículo de Mouser
726-IPD33CN10NGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
2,144En existencias
|
|
|
$1.55
|
|
|
$0.979
|
|
|
$0.653
|
|
|
$0.513
|
|
|
$0.468
|
|
|
$0.421
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
27 A
|
25 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 175 C
|
58 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSF G
- Infineon Technologies
-
1:
$1.50
-
2,155En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
2,155En existencias
|
|
|
$1.50
|
|
|
$0.946
|
|
|
$0.628
|
|
|
$0.496
|
|
|
Ver
|
|
|
$0.394
|
|
|
$0.447
|
|
|
$0.41
|
|
|
$0.394
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC265N10LSFGATMA1
- Infineon Technologies
-
1:
$1.47
-
5,517En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC265N10LSFGATM
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
5,517En existencias
|
|
|
$1.47
|
|
|
$0.897
|
|
|
$0.622
|
|
|
$0.487
|
|
|
$0.424
|
|
|
$0.394
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
20 mOhms
|
- 20 V, 20 V
|
1.2 V
|
21 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
- BSC100N10NSF G
- Infineon Technologies
-
1:
$2.62
-
10,695En existencias
|
N.º de artículo de Mouser
726-BSC100N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 90A TDSON-8 OptiMOS 2
|
|
10,695En existencias
|
|
|
$2.62
|
|
|
$1.69
|
|
|
$1.17
|
|
|
$0.936
|
|
|
$0.874
|
|
|
$0.874
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
90 A
|
10 mOhms
|
- 20 V, 20 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
- BSC252N10NSF G
- Infineon Technologies
-
1:
$1.75
-
1,599En existencias
|
N.º de artículo de Mouser
726-BSC252N10NSFG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 40A TDSON-8 OptiMOS 2
|
|
1,599En existencias
|
|
|
$1.75
|
|
|
$1.11
|
|
|
$0.739
|
|
|
$0.606
|
|
|
Ver
|
|
|
$0.482
|
|
|
$0.531
|
|
|
$0.515
|
|
|
$0.482
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
40 A
|
19.5 mOhms
|
- 20 V, 20 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
78 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
- IPD78CN10NGATMA1
- Infineon Technologies
-
1:
$1.17
-
6,959En pedido
|
N.º de artículo de Mouser
726-IPD78CN10NGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >80 - 100V
|
|
6,959En pedido
En pedido:
4,459 Se espera el 9/3/2026
2,500 Se espera el 19/3/2026
Plazo de entrega de fábrica:
8 Semanas
|
|
|
$1.17
|
|
|
$0.731
|
|
|
$0.481
|
|
|
$0.376
|
|
|
$0.293
|
|
|
Ver
|
|
|
$0.339
|
|
|
$0.287
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
100 V
|
13 A
|
78 mOhms
|
- 20 V, 20 V
|
3 V
|
8 nC
|
- 55 C
|
+ 175 C
|
31 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 29A DPAK-2
- IPD350N06L G
- Infineon Technologies
-
1:
$1.03
-
2,300Se espera el 9/4/2026
-
NRND
|
N.º de artículo de Mouser
726-IPD350N06LG
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 29A DPAK-2
|
|
2,300Se espera el 9/4/2026
|
|
|
$1.03
|
|
|
$0.658
|
|
|
$0.441
|
|
|
$0.336
|
|
|
$0.277
|
|
|
Ver
|
|
|
$0.323
|
|
|
$0.269
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
29 A
|
35 mOhms
|
- 20 V, 20 V
|
1.2 V
|
10 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|