|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long l
- STWA40N95DK5
- STMicroelectronics
-
1:
$15.41
-
595En existencias
|
N.º de artículo de Mouser
511-STWA40N95DK5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 950 V, 0.120 Ohm typ., 38 A MDmesh DK5 Power MOSFET in a TO-247 long l
|
|
595En existencias
|
|
|
$15.41
|
|
|
$9.47
|
|
|
$9.24
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
38 A
|
120 mOhms
|
- 30 V, 30 V
|
3 V
|
100 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
- STH65N050DM9-7AG
- STMicroelectronics
-
1:
$9.00
-
796En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STH65N050DM9-7AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
|
|
796En existencias
|
|
|
$9.00
|
|
|
$6.17
|
|
|
$4.91
|
|
|
$4.59
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
51 A
|
50 mOhms
|
30 V
|
4.5 V
|
100 nC
|
- 50 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
- STHU65N050DM9AG
- STMicroelectronics
-
1:
$9.48
-
455En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STHU65N050DM9AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 38 mOhm typ., 51 A MDmesh DM9 Power MOSFET
|
|
455En existencias
|
|
|
$9.48
|
|
|
$6.51
|
|
|
$5.25
|
|
|
$4.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HU3PAK-7
|
N-Channel
|
1 Channel
|
650 V
|
51 A
|
50 mOhms
|
30 V
|
4.5 V
|
100 nC
|
- 55 C
|
+ 150 C
|
245 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
- STO450N6F7
- STMicroelectronics
-
1:
$5.79
-
1,616En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STO450N6F7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
|
|
1,616En existencias
|
|
|
$5.79
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
$2.86
|
|
|
$2.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
60 V
|
545 A
|
850 mOhms
|
- 20 V, 20 V
|
4 V
|
300 nC
|
- 55 C
|
+ 175 C
|
454 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
- STP15N60M2-EP
- STMicroelectronics
-
1:
$2.36
-
1,962En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP15N60M2-EP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.340 Ohm typ., 11 A MDmesh M2 EP Power MOSFET in a TO-220 pack
|
|
1,962En existencias
|
|
|
$2.36
|
|
|
$1.36
|
|
|
$1.05
|
|
|
$0.883
|
|
|
Ver
|
|
|
$0.736
|
|
|
$0.734
|
|
|
$0.706
|
|
|
$0.703
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
378 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
- STD15N60M2-EP
- STMicroelectronics
-
1:
$2.32
-
2,461En existencias
-
NRND
|
N.º de artículo de Mouser
511-STD15N60M2-EP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 340 mOhm typ., 11 A MDmesh M2 EP Power MOSFET in a DPAK package
|
|
2,461En existencias
|
|
|
$2.32
|
|
|
$1.48
|
|
|
$1.03
|
|
|
$0.869
|
|
|
$0.726
|
|
|
$0.691
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
378 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 3 Amp Zener SuperMESH
- STD4NK50ZT4
- STMicroelectronics
-
1:
$1.94
-
2,304En existencias
-
NRND
|
N.º de artículo de Mouser
511-STD4NK50Z
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500 Volt 3 Amp Zener SuperMESH
|
|
2,304En existencias
|
|
|
$1.94
|
|
|
$1.23
|
|
|
$0.824
|
|
|
$0.664
|
|
|
$0.597
|
|
|
$0.55
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
3 A
|
2.4 Ohms
|
- 30 V, 30 V
|
4.5 V
|
12 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
- STLD125N4F6AG
- STMicroelectronics
-
1:
$3.21
-
2,487En existencias
-
NRND
|
N.º de artículo de Mouser
511-STLD125N4F6AG
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 2.4 mOhm typ., 120 A STripFET F6 Power MOSFET i
|
|
2,487En existencias
|
|
|
$3.21
|
|
|
$2.10
|
|
|
$1.53
|
|
|
$1.30
|
|
|
$1.16
|
|
|
$1.16
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
2 V
|
91 nC
|
- 55 C
|
+ 175 C
|
130 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF19NM50N
- STMicroelectronics
-
1:
$4.93
-
556En existencias
|
N.º de artículo de Mouser
511-STF19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
556En existencias
|
|
|
$4.93
|
|
|
$2.85
|
|
|
$2.60
|
|
|
$2.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
250 mOhms
|
- 25 V, 25 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
- STH260N6F6-2
- STMicroelectronics
-
1:
$4.09
-
693En existencias
|
N.º de artículo de Mouser
511-STH260N6F6-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
|
|
693En existencias
|
|
|
$4.09
|
|
|
$3.06
|
|
|
$2.36
|
|
|
$2.09
|
|
|
$1.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
75 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
4 V
|
183 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
- STI13NM60N
- STMicroelectronics
-
1:
$2.70
-
913En existencias
|
N.º de artículo de Mouser
511-STI13NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
|
|
913En existencias
|
|
|
$2.70
|
|
|
$1.73
|
|
|
$1.18
|
|
|
$0.979
|
|
|
$0.848
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
- STD6N60M2
- STMicroelectronics
-
1:
$1.99
-
2,265En existencias
|
N.º de artículo de Mouser
511-STD6N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 1.06Ohm 4.5A MDmesh M2
|
|
2,265En existencias
|
|
|
$1.99
|
|
|
$1.27
|
|
|
$0.862
|
|
|
$0.731
|
|
|
$0.634
|
|
|
$0.581
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
4.5 A
|
1.06 Ohms
|
- 25 V, 25 V
|
3 V
|
8 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
- STU16N65M2
- STMicroelectronics
-
1:
$2.86
-
808En existencias
|
N.º de artículo de Mouser
511-STU16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
|
|
808En existencias
|
|
|
$2.86
|
|
|
$1.33
|
|
|
$1.21
|
|
|
$1.03
|
|
|
$0.98
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET
- STD1HN60K3
- STMicroelectronics
-
1:
$2.13
-
1,444En existencias
|
N.º de artículo de Mouser
511-STD1HN60K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET
|
|
1,444En existencias
|
|
|
$2.13
|
|
|
$1.36
|
|
|
$0.932
|
|
|
$0.766
|
|
|
$0.675
|
|
|
$0.643
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
1.2 A
|
6.7 Ohms
|
- 30 V, 30 V
|
3.75 V
|
9.5 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
- STF15N95K5
- STMicroelectronics
-
1:
$4.88
-
671En existencias
|
N.º de artículo de Mouser
511-STF15N95K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 950V 0.41Ohm typ. 12A MDmesh K5
|
|
671En existencias
|
|
|
$4.88
|
|
|
$2.64
|
|
|
$2.33
|
|
|
$1.99
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
12 A
|
410 mOhms
|
- 30 V, 30 V
|
4 V
|
40 nC
|
- 55 C
|
+ 150 C
|
40 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU26N60M2
- STMicroelectronics
-
1:
$3.55
-
922En existencias
|
N.º de artículo de Mouser
511-STFU26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
922En existencias
|
|
|
$3.55
|
|
|
$2.31
|
|
|
$1.77
|
|
|
$1.48
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
165 mOhms
|
- 25 V, 25 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6 A MDmesh K5
- STP8N80K5
- STMicroelectronics
-
1:
$2.97
-
984En existencias
|
N.º de artículo de Mouser
511-STP8N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6 A MDmesh K5
|
|
984En existencias
|
|
|
$2.97
|
|
|
$1.48
|
|
|
$1.28
|
|
|
$1.08
|
|
|
$1.04
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
950 mOhms
|
- 30 V, 30 V
|
4 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD10N60DM2
- STMicroelectronics
-
1:
$1.96
-
2,122En existencias
|
N.º de artículo de Mouser
511-STD10N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,122En existencias
|
|
|
$1.96
|
|
|
$1.26
|
|
|
$0.845
|
|
|
$0.671
|
|
|
$0.615
|
|
|
$0.585
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
440 mOhms
|
- 25 V, 25 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
109 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
- ST8L60N065DM9
- STMicroelectronics
-
1:
$6.39
-
243En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L60N065DM9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
|
|
243En existencias
|
|
|
$6.39
|
|
|
$4.44
|
|
|
$3.25
|
|
|
$3.07
|
|
|
$3.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
600 V
|
39 A
|
65 mOhms
|
- 30 V, 30 V
|
4.5 V
|
66 nC
|
- 55 C
|
+ 150 C
|
202 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
- ST8L65N044M9
- STMicroelectronics
-
1:
$7.68
-
225En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L65N044M9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
|
|
225En existencias
|
|
|
$7.68
|
|
|
$5.25
|
|
|
$4.01
|
|
|
$3.77
|
|
|
$3.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
44 mOhms
|
30 V
|
4.2 V
|
110 nC
|
- 55 C
|
+ 150 C
|
166 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
$4.83
-
496En existencias
-
2,000Se espera el 29/6/2026
-
Nuevo producto
|
N.º de artículo de Mouser
511-STK615N4F8AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496En existencias
2,000Se espera el 29/6/2026
|
|
|
$4.83
|
|
|
$3.21
|
|
|
$2.28
|
|
|
$2.15
|
|
|
$2.03
|
|
|
$2.00
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
$2.10
-
910En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL160N6LF7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910En existencias
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.908
|
|
|
$0.722
|
|
|
$0.673
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
$5.94
-
1,022En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N240K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,022En existencias
|
|
|
$5.94
|
|
|
$4.49
|
|
|
$3.62
|
|
|
$3.22
|
|
|
$2.85
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 mOhms
|
- 30 V, 30 V
|
3.5 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO
- STF14NM50N
- STMicroelectronics
-
1:
$4.61
-
1,608En existencias
|
N.º de artículo de Mouser
511-STF14NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO
|
|
1,608En existencias
|
|
|
$4.61
|
|
|
$2.48
|
|
|
$2.20
|
|
|
$1.88
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
12 A
|
320 mOhms
|
- 20 V, 20 V
|
2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
- STP7NK40Z
- STMicroelectronics
-
1:
$2.46
-
2,333En existencias
|
N.º de artículo de Mouser
511-STP7NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
|
|
2,333En existencias
|
|
|
$2.46
|
|
|
$1.21
|
|
|
$0.874
|
|
|
$0.797
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
5.4 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
|
|