|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
- STL260N4F7
- STMicroelectronics
-
1:
$3.67
-
5,403En existencias
|
N.º de artículo de Mouser
511-STL260N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
|
|
5,403En existencias
|
|
|
$3.67
|
|
|
$2.41
|
|
|
$1.69
|
|
|
$1.48
|
|
|
$1.38
|
|
|
$1.38
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
72 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
- STP12N60M2
- STMicroelectronics
-
1:
$2.35
-
968En existencias
|
N.º de artículo de Mouser
511-STP12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
|
|
968En existencias
|
|
|
$2.35
|
|
|
$1.32
|
|
|
$1.03
|
|
|
$0.834
|
|
|
Ver
|
|
|
$0.747
|
|
|
$0.74
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
395 mOhms
|
- 25 V, 25 V
|
2 V
|
16 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STP13N95K3
- STMicroelectronics
-
1:
$7.89
-
374En existencias
|
N.º de artículo de Mouser
511-STP13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
374En existencias
|
|
|
$7.89
|
|
|
$4.48
|
|
|
$4.12
|
|
|
$3.86
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
- STP18N60DM2
- STMicroelectronics
-
1:
$3.18
-
1,235En existencias
|
N.º de artículo de Mouser
511-STP18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
|
|
1,235En existencias
|
|
|
$3.18
|
|
|
$1.68
|
|
|
$1.52
|
|
|
$1.24
|
|
|
$1.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
260 mOhms
|
- 25 V, 25 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
- STP46N60M6
- STMicroelectronics
-
1:
$7.40
-
994En existencias
|
N.º de artículo de Mouser
511-STP46N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 68 mOhm typ., 36 A MDmesh M6 Power MOSFET in a TO-220 package
|
|
994En existencias
|
|
|
$7.40
|
|
|
$5.23
|
|
|
$4.36
|
|
|
$3.88
|
|
|
$3.63
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 mOhms
|
- 25 V, 25 V
|
3.25 V
|
53.5 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
- STP7NK80ZFP
- STMicroelectronics
-
1:
$3.87
-
810En existencias
|
N.º de artículo de Mouser
511-STP7NK80ZFP
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 Volt 5.2 A Zener SuperMESH
|
|
810En existencias
|
|
|
$3.87
|
|
|
$1.97
|
|
|
$1.78
|
|
|
$1.68
|
|
|
$1.48
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
5.2 A
|
1.8 Ohms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
- STP8N90K5
- STMicroelectronics
-
1:
$3.77
-
798En existencias
|
N.º de artículo de Mouser
511-STP8N90K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 900 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package
|
|
798En existencias
|
|
|
$3.77
|
|
|
$1.96
|
|
|
$1.77
|
|
|
$1.45
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
680 mOhms
|
- 30 V, 30 V
|
5 V
|
11 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
- STU7N80K5
- STMicroelectronics
-
1:
$2.63
-
1,841En existencias
|
N.º de artículo de Mouser
511-STU7N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
|
|
1,841En existencias
|
|
|
$2.63
|
|
|
$1.22
|
|
|
$1.10
|
|
|
$0.932
|
|
|
$0.835
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
950 mOhms
|
- 30 V, 30 V
|
4 V
|
13.4 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STW13N95K3
- STMicroelectronics
-
1:
$8.63
-
1,107En existencias
|
N.º de artículo de Mouser
511-STW13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
1,107En existencias
|
|
|
$8.63
|
|
|
$6.28
|
|
|
$5.23
|
|
|
$4.36
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
- STW33N60M6
- STMicroelectronics
-
1:
$5.65
-
427En existencias
|
N.º de artículo de Mouser
511-STW33N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 105 mOhm typ., 25 A MDmesh M6 Power MOSFET in a TO-247 package
|
|
427En existencias
|
|
|
$5.65
|
|
|
$4.07
|
|
|
$2.94
|
|
|
$2.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
26 A
|
125 mOhms
|
- 25 V, 25 V
|
3.25 V
|
33.4 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
- STW58N65DM2AG
- STMicroelectronics
-
1:
$12.09
-
454En existencias
|
N.º de artículo de Mouser
511-STW58N65DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 0.058 Ohm typ., 48 A MDmesh DM2 Power MOSFET i
|
|
454En existencias
|
|
|
$12.09
|
|
|
$9.85
|
|
|
$8.21
|
|
|
$6.83
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
48 A
|
65 mOhms
|
- 25 V, 25 V
|
4 V
|
88 nC
|
- 55 C
|
+ 150 C
|
360 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package
- STW75N65DM6-4
- STMicroelectronics
-
1:
$13.93
-
556En existencias
|
N.º de artículo de Mouser
511-STW75N65DM6-4
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 33 mOhm typ., 75 A MDmesh DM6 Power MOSFET in a TO247-4 package
|
|
556En existencias
|
|
|
$13.93
|
|
|
$10.46
|
|
|
$9.16
|
|
|
$8.98
|
|
|
$8.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-4
|
N-Channel
|
1 Channel
|
650 V
|
75 A
|
36 mOhms
|
- 25 V, 25 V
|
4.75 V
|
118 nC
|
- 55 C
|
+ 150 C
|
480 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
- STWA30N65DM6AG
- STMicroelectronics
-
1:
$7.27
-
352En existencias
|
N.º de artículo de Mouser
511-STWA30N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in
|
|
352En existencias
|
|
|
$7.27
|
|
|
$4.37
|
|
|
$3.67
|
|
|
$3.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
4.75 V
|
46 nC
|
- 55 C
|
+ 150 C
|
284 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA65N60DM6
- STMicroelectronics
-
1:
$7.21
-
589En existencias
|
N.º de artículo de Mouser
511-STWA65N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 60 mOhm typ., 46 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
589En existencias
|
|
|
$7.21
|
|
|
$5.33
|
|
|
$4.31
|
|
|
$3.76
|
|
|
$3.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
38 A
|
71 mOhms
|
- 25 V, 25 V
|
3.25 V
|
54 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea
- STWA70N65DM6
- STMicroelectronics
-
1:
$14.80
-
596En existencias
|
N.º de artículo de Mouser
511-STWA70N65DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 68 A MDmesh DM6 Power MOSFET in a TO-247 long lea
|
|
596En existencias
|
|
|
$14.80
|
|
|
$11.05
|
|
|
$9.56
|
|
|
$8.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
650 V
|
68 A
|
40 mOhms
|
- 25 V, 25 V
|
4.75 V
|
125 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
- STB100N6F7
- STMicroelectronics
-
1:
$2.19
-
1,291En existencias
|
N.º de artículo de Mouser
511-STB100N6F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 4.7 mOhm typ., 100 A STripFET F7 Power MOSFET in a D2PAK package
|
|
1,291En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.951
|
|
|
$0.758
|
|
|
$0.695
|
|
|
$0.679
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
5.6 mOhms
|
- 20 V, 20 V
|
2 V
|
30 nC
|
- 55 C
|
+ 175 C
|
125 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
- STB34NM60N
- STMicroelectronics
-
1:
$10.55
-
970En existencias
|
N.º de artículo de Mouser
511-STB34NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.092Ohm 29A MDMesh II MOS
|
|
970En existencias
|
|
|
$10.55
|
|
|
$7.37
|
|
|
$6.13
|
|
|
$5.72
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
29 A
|
92 mOhms
|
- 25 V, 25 V
|
2 V
|
84 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
- STD2NC45-1
- STMicroelectronics
-
1:
$0.68
-
5,449En existencias
|
N.º de artículo de Mouser
511-STD2NC45-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 450V-4.1ohms 1.5A
|
|
5,449En existencias
|
|
|
$0.68
|
|
|
$0.555
|
|
|
$0.42
|
|
|
$0.33
|
|
|
Ver
|
|
|
$0.275
|
|
|
$0.248
|
|
|
$0.221
|
|
|
$0.212
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
450 V
|
1.5 A
|
4.5 Ohms
|
- 30 V, 30 V
|
2.3 V
|
7 nC
|
- 65 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
- STD5N52K3
- STMicroelectronics
-
1:
$1.91
-
1,510En existencias
|
N.º de artículo de Mouser
511-STD5N52K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 525 V 4.4 A SuperMESH3
|
|
1,510En existencias
|
|
|
$1.91
|
|
|
$1.22
|
|
|
$0.812
|
|
|
$0.655
|
|
|
$0.588
|
|
|
$0.541
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
525 V
|
4.4 A
|
1.2 Ohms
|
- 30 V, 30 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF11NM50N
- STMicroelectronics
-
1:
$3.83
-
808En existencias
|
N.º de artículo de Mouser
511-STF11NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
808En existencias
|
|
|
$3.83
|
|
|
$2.02
|
|
|
$1.68
|
|
|
$1.57
|
|
|
$1.45
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
8.5 A
|
470 mOhms
|
- 25 V, 25 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
- STF12N60M2
- STMicroelectronics
-
1:
$1.93
-
2,073En existencias
|
N.º de artículo de Mouser
511-STF12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
2,073En existencias
|
|
|
$1.93
|
|
|
$0.928
|
|
|
$0.826
|
|
|
$0.658
|
|
|
Ver
|
|
|
$0.581
|
|
|
$0.538
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
450 mOhms
|
- 25 V, 25 V
|
4 V
|
16 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
- STF24N60DM2
- STMicroelectronics
-
1:
$3.27
-
1,168En existencias
|
N.º de artículo de Mouser
511-STF24N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.175 Ohm typ., 18 A MDmesh DM2 Power MOSFET in TO-220FP packag
|
|
1,168En existencias
|
|
|
$3.27
|
|
|
$2.06
|
|
|
$1.63
|
|
|
$1.37
|
|
|
$1.19
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
18 A
|
175 mOhms
|
- 25 V, 25 V
|
3 V
|
29 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
- STF28N60M2
- STMicroelectronics
-
1:
$3.79
-
798En existencias
|
N.º de artículo de Mouser
511-STF28N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.135Ohm typ. 22A MDmesh M2
|
|
798En existencias
|
|
|
$3.79
|
|
|
$1.96
|
|
|
$1.86
|
|
|
$1.54
|
|
|
$1.41
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
24 A
|
120 mOhms
|
- 25 V, 25 V
|
3 V
|
37 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.72Ohm 5.5A MDMesh M2
- STF9N60M2
- STMicroelectronics
-
1:
$1.98
-
1,816En existencias
|
N.º de artículo de Mouser
511-STF9N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 600V 0.72Ohm 5.5A MDMesh M2
|
|
1,816En existencias
|
|
|
$1.98
|
|
|
$1.04
|
|
|
$0.762
|
|
|
$0.657
|
|
|
Ver
|
|
|
$0.604
|
|
|
$0.555
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
5.5 A
|
780 mOhms
|
- 25 V, 25 V
|
3 V
|
10 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 80V 17mOhm 180A STripFET VII
- STH270N8F7-6
- STMicroelectronics
-
1:
$5.14
-
1,884En existencias
|
N.º de artículo de Mouser
511-STH270N8F7-6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 80V 17mOhm 180A STripFET VII
|
|
1,884En existencias
|
|
|
$5.14
|
|
|
$3.42
|
|
|
$2.44
|
|
|
$2.33
|
|
|
$2.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
80 V
|
180 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2 V
|
193 nC
|
- 55 C
|
+ 175 C
|
315 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|