|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V MDMesh
- STB18NM80
- STMicroelectronics
-
1:
$5.27
-
596En existencias
|
N.º de artículo de Mouser
511-STB18NM80
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V MDMesh
|
|
596En existencias
|
|
|
$5.27
|
|
|
$3.66
|
|
|
$2.63
|
|
|
$2.55
|
|
|
$2.38
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
17 A
|
295 mOhms
|
- 30 V, 30 V
|
5 V
|
70 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 18A MDmesh M5 0.19Ohm
- STB20N65M5
- STMicroelectronics
-
1:
$4.26
-
272En existencias
|
N.º de artículo de Mouser
511-STB20N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 18A MDmesh M5 0.19Ohm
|
|
272En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.81
|
|
|
$1.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
18 A
|
190 mOhms
|
- 25 V, 25 V
|
4 V
|
36 nC
|
- 55 C
|
+ 150 C
|
130 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
- STB20NM60T4
- STMicroelectronics
-
1:
$5.06
-
471En existencias
|
N.º de artículo de Mouser
511-STB20NM60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 20 Amp
|
|
471En existencias
|
|
|
$5.06
|
|
|
$3.36
|
|
|
$2.67
|
|
|
$2.37
|
|
|
$2.10
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
290 mOhms
|
- 30 V, 30 V
|
3 V
|
54 nC
|
- 65 C
|
+ 150 C
|
192 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
- STB21N65M5
- STMicroelectronics
-
1:
$5.12
-
423En existencias
|
N.º de artículo de Mouser
511-STB21N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 650V
|
|
423En existencias
|
|
|
$5.12
|
|
|
$3.68
|
|
|
$2.64
|
|
|
$2.56
|
|
|
$2.39
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
190 mOhms
|
- 25 V, 25 V
|
4 V
|
50 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
- STB28N60DM2
- STMicroelectronics
-
1:
$4.26
-
83En existencias
|
N.º de artículo de Mouser
511-STB28N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.13 Ohm typ., 21 A MDmesh DM2 Power MOSFET in D2PAK package
|
|
83En existencias
|
|
|
$4.26
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.81
|
|
|
$1.66
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
22 A
|
130 mOhms
|
- 25 V, 25 V
|
3 V
|
39 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
- STB30N80K5
- STMicroelectronics
-
1:
$7.94
-
134En existencias
-
1,000Se espera el 2/6/2026
|
N.º de artículo de Mouser
511-STB30N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.15 Ohm typ., 24 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
134En existencias
1,000Se espera el 2/6/2026
|
|
|
$7.94
|
|
|
$5.41
|
|
|
$4.17
|
|
|
$3.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
24 A
|
180 mOhms
|
- 30 V, 30 V
|
3 V
|
43 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
- STB5N80K5
- STMicroelectronics
-
1:
$2.75
-
700En existencias
|
N.º de artículo de Mouser
511-STB5N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.50 Ohm typ., 4 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
700En existencias
|
|
|
$2.75
|
|
|
$1.78
|
|
|
$1.27
|
|
|
$1.05
|
|
|
$0.904
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
4 A
|
1.5 Ohms
|
- 30 V, 30 V
|
3 V
|
5 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package
- STB6N80K5
- STMicroelectronics
-
1:
$2.80
-
634En existencias
|
N.º de artículo de Mouser
511-STB6N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in a D2PAK package
|
|
634En existencias
|
|
|
$2.80
|
|
|
$1.81
|
|
|
$1.28
|
|
|
$1.07
|
|
|
$0.924
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
4.5 A
|
1.6 Ohms
|
- 30 V, 30 V
|
4 V
|
7.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 0.019 61A Mdmesh V
- STB80N20M5
- STMicroelectronics
-
1:
$5.93
-
14En existencias
-
2,000Se espera el 1/2/2027
|
N.º de artículo de Mouser
511-STB80N20M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 200V 0.019 61A Mdmesh V
|
|
14En existencias
2,000Se espera el 1/2/2027
|
|
|
$5.93
|
|
|
$4.13
|
|
|
$2.98
|
|
|
$2.96
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
200 V
|
61 A
|
23 mOhms
|
- 25 V, 25 V
|
5 V
|
104 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
- STB8N65M5
- STMicroelectronics
-
1:
$3.46
-
908En existencias
|
N.º de artículo de Mouser
511-STB8N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
|
|
908En existencias
|
|
|
$3.46
|
|
|
$2.26
|
|
|
$1.58
|
|
|
$1.37
|
|
|
$1.28
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
560 mOhms
|
- 25 V, 25 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 1.5Ohm typ 5.2A Zener-protecte
- STB9NK80Z
- STMicroelectronics
-
1:
$2.77
-
334En existencias
|
N.º de artículo de Mouser
511-STB9NK80Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CH 800V 1.5Ohm typ 5.2A Zener-protecte
|
|
334En existencias
|
|
|
$2.77
|
|
|
$1.79
|
|
|
$1.23
|
|
|
$1.01
|
|
|
$0.937
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
800 V
|
5.2 A
|
1.5 Ohms
|
- 30 V, 30 V
|
3.75 V
|
40 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
- STB9NK90Z
- STMicroelectronics
-
1:
$5.28
-
303En existencias
-
1,000Se espera el 27/4/2026
|
N.º de artículo de Mouser
511-STB9NK90Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N Ch 900V 1.1 8A Zener SuperMESH
|
|
303En existencias
1,000Se espera el 27/4/2026
|
|
|
$5.28
|
|
|
$3.83
|
|
|
$2.75
|
|
|
$2.69
|
|
|
$2.51
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
900 V
|
8 A
|
1.3 Ohms
|
- 30 V, 30 V
|
3 V
|
72 nC
|
- 55 C
|
+ 150 C
|
160 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
- STD10NM60ND
- STMicroelectronics
-
1:
$2.85
-
857En existencias
|
N.º de artículo de Mouser
511-STD10NM60ND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.57 Ohm 8A FDmesh II PWR
|
|
857En existencias
|
|
|
$2.85
|
|
|
$1.84
|
|
|
$1.29
|
|
|
$1.06
|
|
|
$0.988
|
|
|
$0.94
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
600 mOhms
|
- 25 V, 25 V
|
2 V
|
19 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
- STD10P10F6
- STMicroelectronics
-
1:
$1.31
-
3,067En existencias
|
N.º de artículo de Mouser
511-STD10P10F6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-channel 100 V, 0.136 Ohm typ., 10 A STripFET F6 Power MOSFET in a DPAK package
|
|
3,067En existencias
|
|
|
$1.31
|
|
|
$0.821
|
|
|
$0.544
|
|
|
$0.427
|
|
|
$0.386
|
|
|
$0.336
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
100 V
|
10 A
|
180 mOhms
|
- 20 V, 20 V
|
2 V
|
16.5 nC
|
- 55 C
|
+ 175 C
|
40 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
- STD11N50M2
- STMicroelectronics
-
1:
$1.50
-
968En existencias
|
N.º de artículo de Mouser
511-STD11N50M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.45 Ohm typ., 8 A MDmesh M2 Power MOSFET in DPAK package
|
|
968En existencias
|
|
|
$1.50
|
|
|
$0.95
|
|
|
$0.633
|
|
|
$0.496
|
|
|
$0.452
|
|
|
$0.405
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
8 A
|
450 mOhms
|
- 25 V, 25 V
|
2 V
|
12 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
- STD11N60DM2
- STMicroelectronics
-
1:
$2.29
-
1,878En existencias
|
N.º de artículo de Mouser
511-STD11N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 370 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
1,878En existencias
|
|
|
$2.29
|
|
|
$1.47
|
|
|
$0.998
|
|
|
$0.798
|
|
|
$0.744
|
|
|
$0.686
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
370 mOhms
|
- 25 V, 25 V
|
3 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
- STD11N65M2
- STMicroelectronics
-
1:
$2.20
-
1,294En existencias
|
N.º de artículo de Mouser
511-STD11N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.60 Ohm typ., 7 A MDmesh M2 Power MOSFET in DPAK package
|
|
1,294En existencias
|
|
|
$2.20
|
|
|
$1.41
|
|
|
$1.02
|
|
|
$0.86
|
|
|
$0.719
|
|
|
$0.684
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
7 A
|
670 mOhms
|
- 25 V, 25 V
|
3 V
|
12.5 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh II Plus
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS
- STD11N65M5
- STMicroelectronics
-
1:
$2.51
-
1,127En existencias
|
N.º de artículo de Mouser
511-STD11N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.43 Ohm 9A MDmesh M5 MOS
|
|
1,127En existencias
|
|
|
$2.51
|
|
|
$1.62
|
|
|
$1.11
|
|
|
$0.889
|
|
|
$0.856
|
|
|
$0.823
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
9 A
|
480 mOhms
|
- 25 V, 25 V
|
3 V
|
17 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
- STD12N50M2
- STMicroelectronics
-
1:
$2.08
-
678En existencias
|
N.º de artículo de Mouser
511-STD12N50M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 325 mOhm typ., 10 A MDmesh M2 Power MOSFET in a DPAK package
|
|
678En existencias
|
|
|
$2.08
|
|
|
$1.33
|
|
|
$0.898
|
|
|
$0.715
|
|
|
$0.663
|
|
|
$0.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
10 A
|
325 mOhms
|
- 30 V, 30 V
|
2 V
|
15 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package
- STD12N65M2
- STMicroelectronics
-
1:
$2.18
-
424En existencias
-
2,500Se espera el 6/4/2026
|
N.º de artículo de Mouser
511-STD12N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 420 mOhm typ., 8 A MDmesh M2 Power MOSFET in a DPAK package
|
|
424En existencias
2,500Se espera el 6/4/2026
|
|
|
$2.18
|
|
|
$1.40
|
|
|
$0.951
|
|
|
$0.759
|
|
|
$0.701
|
|
|
$0.646
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
8 A
|
420 mOhms
|
- 25 V, 25 V
|
2 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 285 mOhm typ., 12 A MDmesh II Power MOSFET in
- STD14NM50NAG
- STMicroelectronics
-
1:
$2.54
-
1,088En existencias
|
N.º de artículo de Mouser
511-STD14NM50NAG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 500 V, 285 mOhm typ., 12 A MDmesh II Power MOSFET in
|
|
1,088En existencias
|
|
|
$2.54
|
|
|
$1.65
|
|
|
$1.13
|
|
|
$0.903
|
|
|
$0.875
|
|
|
$0.838
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
500 V
|
12 A
|
280 mOhms
|
- 25 V, 25 V
|
2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package
- STD15N60DM6
- STMicroelectronics
-
1:
$2.80
-
733En existencias
|
N.º de artículo de Mouser
511-STD15N60DM6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 286 mOhm typ., 12 A MDmesh DM6 Power MOSFET in a DPAK package
|
|
733En existencias
|
|
|
$2.80
|
|
|
$1.82
|
|
|
$1.25
|
|
|
$1.03
|
|
|
$0.953
|
|
|
$0.953
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
338 mOhms
|
- 25 V, 25 V
|
4.75 V
|
15.3 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
- STD16N50M2
- STMicroelectronics
-
1:
$2.21
-
551En existencias
-
2,500Se espera el 19/3/2026
|
N.º de artículo de Mouser
511-STD16N50M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 500 V, 0.24 Ohm typ., 13 A MDmesh M2 Power MOSFET in a DPAK package
|
|
551En existencias
2,500Se espera el 19/3/2026
|
|
|
$2.21
|
|
|
$1.42
|
|
|
$0.963
|
|
|
$0.768
|
|
|
$0.725
|
|
|
$0.69
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
550 V
|
13 A
|
240 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package
- STD16N60M6
- STMicroelectronics
-
1:
$2.57
-
18En existencias
|
N.º de artículo de Mouser
511-STD16N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh M6 Power MOSFET in a DPAK package
|
|
18En existencias
|
|
|
$2.57
|
|
|
$1.66
|
|
|
$1.19
|
|
|
$0.991
|
|
|
$0.858
|
|
|
$0.858
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
320 mOhms
|
- 25 V, 25 V
|
4.75 V
|
16.7 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 17 Amp
- STD17NF03LT4
- STMicroelectronics
-
1:
$0.82
-
6,485En existencias
|
N.º de artículo de Mouser
511-STD17NF03L
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30 Volt 17 Amp
|
|
6,485En existencias
|
|
|
$0.82
|
|
|
$0.518
|
|
|
$0.359
|
|
|
$0.275
|
|
|
$0.218
|
|
|
Ver
|
|
|
$0.248
|
|
|
$0.207
|
|
|
$0.193
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
17 A
|
50 mOhms
|
- 16 V, 16 V
|
1 V
|
4.8 nC
|
- 55 C
|
+ 175 C
|
30 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|