|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte
- STU3N80K5
- STMicroelectronics
-
1:
$1.52
-
2,731En existencias
|
N.º de artículo de Mouser
511-STU3N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 2.8Ohm typ 2.5A Zener-protecte
|
|
2,731En existencias
|
|
|
$1.52
|
|
|
$0.748
|
|
|
$0.709
|
|
|
$0.637
|
|
|
Ver
|
|
|
$0.543
|
|
|
$0.486
|
|
|
$0.478
|
|
|
$0.477
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
800 V
|
2.5 A
|
3.5 Ohms
|
- 30 V, 30 V
|
3 V
|
9.5 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
- STF6N62K3
- STMicroelectronics
-
1:
$1.21
-
1,671En existencias
|
N.º de artículo de Mouser
511-STF6N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-1.1ohms 5.5A
|
|
1,671En existencias
|
|
|
$1.21
|
|
|
$0.932
|
|
|
$0.889
|
|
|
$0.877
|
|
|
Ver
|
|
|
$0.876
|
|
|
$0.812
|
|
|
$0.81
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
5.5 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3.75 V
|
34 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
- STFU28N65M2
- STMicroelectronics
-
1:
$2.14
-
1,787En existencias
|
N.º de artículo de Mouser
511-STFU28N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP ultra na
|
|
1,787En existencias
|
|
|
$2.14
|
|
|
$1.73
|
|
|
$1.64
|
|
|
$1.52
|
|
|
Ver
|
|
|
$1.37
|
|
|
$1.29
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
20 A
|
180 mOhms
|
- 25 V, 25 V
|
2 V
|
35 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.3 20 Ohm 10A MDmesh II
- STL13NM60N
- STMicroelectronics
-
1:
$3.39
-
2,235En existencias
|
N.º de artículo de Mouser
511-STL13NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.3 20 Ohm 10A MDmesh II
|
|
2,235En existencias
|
|
|
$3.39
|
|
|
$2.21
|
|
|
$1.69
|
|
|
$1.41
|
|
|
$1.22
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
385 mOhms
|
- 25 V, 25 V
|
2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 100 V, 3.2 mOhm max., 154 A STripFET F8 Power MOSFET
- STL165N10F8AG
- STMicroelectronics
-
1:
$3.48
-
2,330En existencias
|
N.º de artículo de Mouser
511-STL165N10F8AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 100 V, 3.2 mOhm max., 154 A STripFET F8 Power MOSFET
|
|
2,330En existencias
|
|
|
$3.48
|
|
|
$2.27
|
|
|
$1.78
|
|
|
$1.49
|
|
|
$1.39
|
|
|
$1.17
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
100 V
|
158 A
|
3.2 mOhms
|
- 20 V, 20 V
|
4 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
- STL26NM60N
- STMicroelectronics
-
1:
$5.13
-
2,119En existencias
|
N.º de artículo de Mouser
511-STL26NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.160 Ohm 19A HV Mdmesh II
|
|
2,119En existencias
|
|
|
$5.13
|
|
|
$3.65
|
|
|
$2.88
|
|
|
$2.87
|
|
|
$2.61
|
|
|
$2.23
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-HV-5
|
N-Channel
|
1 Channel
|
600 V
|
19 A
|
160 mOhms
|
- 25 V, 25 V
|
4 V
|
60 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.63 6.5A MDmesh II Power MO
- STD9NM60N
- STMicroelectronics
-
1:
$3.20
-
2,341En existencias
|
N.º de artículo de Mouser
511-STD9NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.63 6.5A MDmesh II Power MO
|
|
2,341En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
6.5 A
|
745 mOhms
|
- 25 V, 25 V
|
2 V
|
17.4 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5
- STL31N65M5
- STMicroelectronics
-
1:
$4.90
-
2,921En existencias
|
N.º de artículo de Mouser
511-STL31N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.135 Ohm typ. 15A MDmeshM5
|
|
2,921En existencias
|
|
|
$4.90
|
|
|
$3.25
|
|
|
$2.45
|
|
|
$2.29
|
|
|
Ver
|
|
|
$1.77
|
|
|
$1.96
|
|
|
$1.77
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-5
|
N-Channel
|
1 Channel
|
650 V
|
15 A
|
162 mOhms
|
- 25 V, 25 V
|
4 V
|
45 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190 ohm 16A Mdmesh
- STB22NM60N
- STMicroelectronics
-
1:
$3.14
-
1,030En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STB22NM60N
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V 0.190 ohm 16A Mdmesh
|
|
1,030En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
220 mOhms
|
- 30 V, 30 V
|
4 V
|
44 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 5 Amp
- STB8NM60T4
- STMicroelectronics
-
1:
$1.51
-
919En existencias
|
N.º de artículo de Mouser
511-STB8NM60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 Volt 5 Amp
|
|
919En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
900 mOhms
|
- 30 V, 30 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
100 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
- STF16N65M2
- STMicroelectronics
-
1:
$2.59
-
926En existencias
|
N.º de artículo de Mouser
511-STF16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220FP package
|
|
926En existencias
|
|
|
$2.59
|
|
|
$1.02
|
|
|
$0.941
|
|
|
$0.843
|
|
|
Ver
|
|
|
$0.842
|
|
|
$0.795
|
|
|
$0.76
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
320 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
- STF80N1K1K6
- STMicroelectronics
-
1:
$2.46
-
1,003En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N1K1K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 1.0 Ohm typ., 5 A MDmesh K6 Power MOSFET
|
|
1,003En existencias
|
|
|
$2.46
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.893
|
|
|
Ver
|
|
|
$0.786
|
|
|
$0.728
|
|
|
$0.703
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
5 A
|
1.1 Ohms
|
- 30 V, 30 V
|
4 V
|
5.7 nC
|
- 55 C
|
+ 150 C
|
21 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
- STF80N600K6
- STMicroelectronics
-
1:
$3.18
-
1,047En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N600K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET
|
|
1,047En existencias
|
|
|
$3.18
|
|
|
$2.07
|
|
|
$1.58
|
|
|
$1.32
|
|
|
Ver
|
|
|
$1.13
|
|
|
$1.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
7 A
|
600 mOhms
|
- 30 V, 30 V
|
4 V
|
10.7 nC
|
- 55 C
|
+ 150 C
|
23 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
- STF2N62K3
- STMicroelectronics
-
1:
$2.31
-
1,861En existencias
|
N.º de artículo de Mouser
511-STF2N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 620V 3 Ohm 2.2A SuperMESH3
|
|
1,861En existencias
|
|
|
$2.31
|
|
|
$0.703
|
|
|
$0.684
|
|
|
$0.678
|
|
|
Ver
|
|
|
$0.627
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
2.2 A
|
3.6 Ohms
|
- 30 V, 30 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
- STP18N65M2
- STMicroelectronics
-
1:
$2.65
-
953En existencias
|
N.º de artículo de Mouser
511-STP18N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
|
|
953En existencias
|
|
|
$2.65
|
|
|
$1.48
|
|
|
$1.45
|
|
|
$1.20
|
|
|
Ver
|
|
|
$1.08
|
|
|
$1.02
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
275 mOhms
|
- 25 V, 25 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V 1.1
- STP6N62K3
- STMicroelectronics
-
1:
$1.95
-
939En existencias
|
N.º de artículo de Mouser
511-STP6N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620V 1.1
|
|
939En existencias
|
|
|
$1.95
|
|
|
$0.852
|
|
|
$0.831
|
|
|
$0.825
|
|
|
Ver
|
|
|
$0.776
|
|
|
$0.747
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
5.5 A
|
1.28 Ohms
|
- 30 V, 30 V
|
3 V
|
34 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
- STF10N62K3
- STMicroelectronics
-
1:
$2.71
-
976En existencias
|
N.º de artículo de Mouser
511-STF10N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 620 V 8.4 A TO-220 TO-22
|
|
976En existencias
|
|
|
$2.71
|
|
|
$1.74
|
|
|
$1.18
|
|
|
$0.983
|
|
|
Ver
|
|
|
$0.835
|
|
|
$0.80
|
|
|
$0.773
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
620 V
|
8.4 A
|
680 mOhms
|
- 30 V, 30 V
|
3 V
|
42 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
- STFH13N60M2
- STMicroelectronics
-
1:
$3.15
-
981En existencias
-
Verificar estado con la fábrica
|
N.º de artículo de Mouser
511-STFH13N60M2
Verificar estado con la fábrica
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.35 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220FP wide creep
|
|
981En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
350 mOhms
|
- 25 V, 25 V
|
2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
- STO36N60M6
- STMicroelectronics
-
1:
$6.03
-
504En existencias
|
N.º de artículo de Mouser
511-STO36N60M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 85 mOhm typ., 30 A MDmesh M6 Power MOSFET
|
|
504En existencias
|
|
|
$6.03
|
|
|
$4.04
|
|
|
$2.92
|
|
|
$2.90
|
|
|
Ver
|
|
|
$2.35
|
|
|
$2.60
|
|
|
$2.35
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
600 V
|
30 A
|
99 mOhms
|
- 25 V, 25 V
|
4.75 V
|
44.3 nC
|
- 55 C
|
+ 150 C
|
230 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
- STW35N60DM2
- STMicroelectronics
-
1:
$5.06
-
384En existencias
|
N.º de artículo de Mouser
511-STW35N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) in TO-247 package
|
|
384En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
600 V
|
28 A
|
110 mOhms
|
- 25 V, 25 V
|
3 V
|
54 nC
|
- 55 C
|
+ 150 C
|
210 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
- SH63N65DM6AG
- STMicroelectronics
-
1:
$21.96
-
194En existencias
|
N.º de artículo de Mouser
511-SH63N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 650V, 56 mOhm typ., 53 A MDmesh DM6 Power MOSFET
|
|
194En existencias
|
|
|
$21.96
|
|
|
$17.39
|
|
|
$12.60
|
|
|
$12.60
|
|
|
$10.50
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
ACEPACK SMIT-9
|
N-Channel
|
2 Channel
|
650 V
|
53 A
|
64 mOhms
|
- 25 V, 25 V
|
4.75 V
|
80 nC
|
- 55 C
|
+ 150 C
|
424 W
|
Enhancement
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
- SH68N65DM6AG
- STMicroelectronics
-
1:
$19.06
-
192En existencias
|
N.º de artículo de Mouser
511-SH68N65DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
|
|
192En existencias
|
|
|
$19.06
|
|
|
$13.62
|
|
|
$10.63
|
|
|
$10.63
|
|
|
$10.62
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
N-Channel
|
|
650 V
|
64 A
|
35 mOhms
|
|
|
|
|
|
|
|
AQG 324
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
- STH12N120K5-2AG
- STMicroelectronics
-
1:
$12.01
-
686En existencias
-
1,000Se espera el 6/4/2026
|
N.º de artículo de Mouser
511-STH12N120K5-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 1200 V, 1.45 Ohm typ., 7 A MDmesh K5 Power MOSFET
|
|
686En existencias
1,000Se espera el 6/4/2026
|
|
|
$12.01
|
|
|
$9.72
|
|
|
$8.10
|
|
|
$7.37
|
|
|
$5.89
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
1.2 kV
|
7 A
|
1.9 Ohms
|
- 30 V, 30 V
|
5 V
|
36 nC
|
- 55 C
|
+ 150 C
|
266 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
- STH60N099DM9-2AG
- STMicroelectronics
-
1:
$5.80
-
1,142En existencias
-
1,000Se espera el 9/3/2026
|
N.º de artículo de Mouser
511-STH60N099DM9-2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 76 mOhm typ., 27 A MDmesh DM9 Power MOSFET
|
|
1,142En existencias
1,000Se espera el 9/3/2026
|
|
|
$5.80
|
|
|
$4.05
|
|
|
$3.28
|
|
|
$2.91
|
|
|
$2.49
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
600 V
|
27 A
|
99 mOhms
|
- 30 V, 30 V
|
4.5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
179 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
- STL160N10F8
- STMicroelectronics
-
1:
$3.26
-
2,940En existencias
|
N.º de artículo de Mouser
511-STL160N10F8
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 100V, 3.2mOhm max, 158A STripFET F8 Power MOSFET
|
|
2,940En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
100 V
|
158 A
|
3.2 mOhms
|
- 20 V, 20 V
|
4 V
|
90 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape
|
|