|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
- STD3N65M6
- STMicroelectronics
-
1:
$1.67
-
2,441En existencias
|
N.º de artículo de Mouser
511-STD3N65M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
|
|
2,441En existencias
|
|
|
$1.67
|
|
|
$1.06
|
|
|
$0.705
|
|
|
$0.578
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.428
|
|
|
$0.417
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
- STU16N65M2
- STMicroelectronics
-
1:
$2.86
-
818En existencias
|
N.º de artículo de Mouser
511-STU16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package
|
|
818En existencias
|
|
|
$2.86
|
|
|
$1.33
|
|
|
$1.21
|
|
|
$1.03
|
|
|
Ver
|
|
|
$0.882
|
|
|
$0.857
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU18N65M2
- STMicroelectronics
-
1:
$3.14
-
978En existencias
|
N.º de artículo de Mouser
511-STFU18N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
978En existencias
|
|
|
$3.14
|
|
|
$1.57
|
|
|
$1.42
|
|
|
$1.15
|
|
|
Ver
|
|
|
$1.05
|
|
|
$0.986
|
|
|
$0.974
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
12 A
|
330 mOhms
|
- 25 V, 25 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
- STF38N65M5
- STMicroelectronics
-
1:
$6.05
-
431En existencias
|
N.º de artículo de Mouser
511-STF38N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650V 0.076 Ohm 30 A MDmesh M5
|
|
431En existencias
|
|
|
$6.05
|
|
|
$3.44
|
|
|
$3.08
|
|
|
$2.63
|
|
|
Ver
|
|
|
$2.58
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
19 A
|
95 mOhms
|
- 25 V, 25 V
|
3 V
|
71 nC
|
- 55 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
- STD10N60DM2
- STMicroelectronics
-
1:
$1.96
-
2,122En existencias
|
N.º de artículo de Mouser
511-STD10N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 440 mOhm typ., 8 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,122En existencias
|
|
|
$1.96
|
|
|
$1.25
|
|
|
$0.844
|
|
|
$0.669
|
|
|
$0.553
|
|
|
Ver
|
|
|
$0.614
|
|
|
$0.511
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
8 A
|
440 mOhms
|
- 25 V, 25 V
|
3 V
|
15 nC
|
- 55 C
|
+ 150 C
|
109 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET
- STD1HN60K3
- STMicroelectronics
-
1:
$2.11
-
1,444En existencias
|
N.º de artículo de Mouser
511-STD1HN60K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET
|
|
1,444En existencias
|
|
|
$2.11
|
|
|
$1.36
|
|
|
$0.921
|
|
|
$0.735
|
|
|
$0.591
|
|
|
Ver
|
|
|
$0.674
|
|
|
$0.561
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
1.2 A
|
6.7 Ohms
|
- 30 V, 30 V
|
3.75 V
|
9.5 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
- STFU26N60M2
- STMicroelectronics
-
1:
$3.55
-
922En existencias
|
N.º de artículo de Mouser
511-STFU26N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 140 mOhm typ., 20 A MDmesh M2 Power MOSFET in a TO-220FP ultra
|
|
922En existencias
|
|
|
$3.55
|
|
|
$2.30
|
|
|
$1.76
|
|
|
$1.48
|
|
|
Ver
|
|
|
$1.19
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
20 A
|
165 mOhms
|
- 25 V, 25 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6 A MDmesh K5
- STP8N80K5
- STMicroelectronics
-
1:
$2.97
-
984En existencias
|
N.º de artículo de Mouser
511-STP8N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 800V 0.76 Ohm 6 A MDmesh K5
|
|
984En existencias
|
|
|
$2.97
|
|
|
$1.30
|
|
|
$1.21
|
|
|
$1.08
|
|
|
Ver
|
|
|
$0.978
|
|
|
$0.924
|
|
|
$0.903
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
6 A
|
950 mOhms
|
- 30 V, 30 V
|
4 V
|
16.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
- STB24NM60N
- STMicroelectronics
-
1:
$7.03
-
223En existencias
|
N.º de artículo de Mouser
511-STB24NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.168 Ohm 17A Mdmesh II
|
|
223En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
17 A
|
168 mOhms
|
- 30 V, 30 V
|
3 V
|
46 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
- STF19NM50N
- STMicroelectronics
-
1:
$4.93
-
556En existencias
|
N.º de artículo de Mouser
511-STF19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V
|
|
556En existencias
|
|
|
$4.93
|
|
|
$2.67
|
|
|
$2.50
|
|
|
$2.16
|
|
|
Ver
|
|
|
$2.04
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
250 mOhms
|
- 25 V, 25 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
- STH260N6F6-2
- STMicroelectronics
-
1:
$3.81
-
693En existencias
|
N.º de artículo de Mouser
511-STH260N6F6-2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 0.0016 Ohm 180A STripFET DG VI
|
|
693En existencias
|
|
|
$3.81
|
|
|
$3.04
|
|
|
$2.35
|
|
|
$2.08
|
|
|
$1.63
|
|
|
$1.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
H2PAK-2
|
N-Channel
|
1 Channel
|
75 V
|
120 A
|
2.4 mOhms
|
- 20 V, 20 V
|
4 V
|
183 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
- STI13NM60N
- STMicroelectronics
-
1:
$2.69
-
913En existencias
|
N.º de artículo de Mouser
511-STI13NM60N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600V 0.28Ohm 11A Mdmesh II I2PAK
|
|
913En existencias
|
|
|
$2.69
|
|
|
$1.72
|
|
|
$1.17
|
|
|
$0.978
|
|
|
Ver
|
|
|
$0.831
|
|
|
$0.797
|
|
|
$0.77
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
2 V
|
30 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
- ST8L60N065DM9
- STMicroelectronics
-
1:
$6.21
-
244En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L60N065DM9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 51 mOhm typ., 39 A MDmesh DM9 Power MOSFET
|
|
244En existencias
|
|
|
$6.21
|
|
|
$4.76
|
|
|
$3.85
|
|
|
$3.42
|
|
|
$2.93
|
|
|
$2.93
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
|
600 V
|
39 A
|
65 mOhms
|
- 30 V, 30 V
|
4.5 V
|
66 nC
|
- 55 C
|
+ 150 C
|
202 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
- ST8L65N044M9
- STMicroelectronics
-
1:
$7.63
-
227En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-ST8L65N044M9
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 36 mOhm typ., 58 A MDmesh M9 Power MOSFET
|
|
227En existencias
|
|
|
$7.63
|
|
|
$5.39
|
|
|
$4.49
|
|
|
$4.00
|
|
|
$3.56
|
|
|
$3.56
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5
|
N-Channel
|
1 Channel
|
650 V
|
58 A
|
44 mOhms
|
30 V
|
4.2 V
|
110 nC
|
- 55 C
|
+ 150 C
|
166 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
- STK615N4F8AG
- STMicroelectronics
-
1:
$4.83
-
496En existencias
-
2,000Se espera el 29/6/2026
-
Nuevo producto
|
N.º de artículo de Mouser
511-STK615N4F8AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-channel 40 V, 0.48 mOhm max., 672 A STripFET F8 Power MOSFET
|
|
496En existencias
2,000Se espera el 29/6/2026
|
|
|
$4.83
|
|
|
$3.21
|
|
|
$2.55
|
|
|
$2.27
|
|
|
$2.14
|
|
|
$1.81
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
- STL160N6LF7
- STMicroelectronics
-
1:
$2.10
-
910En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL160N6LF7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel logic level 60 V, 2.5 mOhm max., 160 A, STripFET F7 Power MOSFET
|
|
910En existencias
|
|
|
$2.10
|
|
|
$1.34
|
|
|
$0.908
|
|
|
$0.722
|
|
|
$0.586
|
|
|
Ver
|
|
|
$0.672
|
|
|
$0.56
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
$5.93
-
1,023En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N240K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,023En existencias
|
|
|
$5.93
|
|
|
$4.48
|
|
|
$3.62
|
|
|
$3.22
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 mOhms
|
- 30 V, 30 V
|
3.5 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO
- STF14NM50N
- STMicroelectronics
-
1:
$4.60
-
1,620En existencias
|
N.º de artículo de Mouser
511-STF14NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 500V 0.246 Ohm 12A Mdmesh 2 PWR MO
|
|
1,620En existencias
|
|
|
$4.60
|
|
|
$2.25
|
|
|
$2.10
|
|
|
$1.86
|
|
|
Ver
|
|
|
$1.70
|
|
|
$1.69
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
500 V
|
12 A
|
320 mOhms
|
- 20 V, 20 V
|
2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
- STP7NK40Z
- STMicroelectronics
-
1:
$2.46
-
2,343En existencias
|
N.º de artículo de Mouser
511-STP7NK40Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 400 Volt 5.4 A Zener SuperMESH
|
|
2,343En existencias
|
|
|
$2.46
|
|
|
$0.953
|
|
|
$0.761
|
|
|
$0.725
|
|
|
Ver
|
|
|
$0.724
|
|
|
$0.697
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
400 V
|
5.4 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
26 nC
|
- 55 C
|
+ 150 C
|
70 W
|
Enhancement
|
|
SuperMESH
|
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40V, 2.6mOhm max, 154A STripFET F8 Power MOSFET
- STL165N4F8AG
- STMicroelectronics
-
1:
$2.04
-
3,051En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL165N4F8AG
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive N-Channel 40V, 2.6mOhm max, 154A STripFET F8 Power MOSFET
|
|
3,051En existencias
|
|
|
$2.04
|
|
|
$1.31
|
|
|
$0.882
|
|
|
$0.701
|
|
|
$0.568
|
|
|
Ver
|
|
|
$0.648
|
|
|
$0.54
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-4
|
N-Channel
|
1 Channel
|
40 V
|
154 A
|
2.6 mOhms
|
- 20 V, 20 V
|
4 V
|
28 nC
|
- 55 C
|
+ 175 C
|
111 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 40V, 1.1mohm max, 290 STripFET F8 Power MOSFET
- STL300N4F8
- STMicroelectronics
-
1:
$2.59
-
5,976En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STL300N4F8
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Channel Enhancement Mode 40V, 1.1mohm max, 290 STripFET F8 Power MOSFET
|
|
5,976En existencias
|
|
|
$2.59
|
|
|
$1.67
|
|
|
$1.15
|
|
|
$0.919
|
|
|
$0.754
|
|
|
Ver
|
|
|
$0.891
|
|
|
$0.748
|
|
Min.: 1
Mult.: 1
|
|
|
|
|
|
N-Channel
|
|
|
290 A
|
1.1 mOhms
|
|
|
|
|
|
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID)
- STL21N65M5
- STMicroelectronics
-
1:
$3.86
-
2,732En existencias
|
N.º de artículo de Mouser
511-STL21N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Mdmesh 650V .19 Ohms 1mm TO-220 17A (ID)
|
|
2,732En existencias
|
|
|
$3.86
|
|
|
$3.08
|
|
|
$2.59
|
|
|
$2.54
|
|
|
Ver
|
|
|
$2.46
|
|
|
$2.47
|
|
|
$2.46
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-8x8-HV-5
|
N-Channel
|
1 Channel
|
650 V
|
17 A
|
175 mOhms
|
- 25 V, 25 V
|
5 V
|
44 nC
|
- 55 C
|
+ 150 C
|
3 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-2.2ohms 2.7A
- STU3N62K3
- STMicroelectronics
-
1:
$1.96
-
2,988En existencias
|
N.º de artículo de Mouser
511-STU3N62K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch, 620V-2.2ohms 2.7A
|
|
2,988En existencias
|
|
|
$1.96
|
|
|
$0.918
|
|
|
$0.836
|
|
|
$0.704
|
|
|
Ver
|
|
|
$0.602
|
|
|
$0.535
|
|
|
$0.53
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
620 V
|
2.7 A
|
2.5 Ohms
|
- 30 V, 30 V
|
3 V
|
13 nC
|
- 55 C
|
+ 150 C
|
45 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V 13A
- STW19NM50N
- STMicroelectronics
-
1:
$6.63
-
428En existencias
|
N.º de artículo de Mouser
511-STW19NM50N
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) POWER MOSFET N-CH 500V 13A
|
|
428En existencias
|
|
|
$6.63
|
|
|
$3.24
|
|
|
$2.96
|
|
|
$2.95
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-247-3
|
N-Channel
|
1 Channel
|
500 V
|
14 A
|
250 mOhms
|
- 25 V, 25 V
|
4 V
|
34 nC
|
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 5 Amp
- STD5NM60-1
- STMicroelectronics
-
1:
$3.41
-
2,017En existencias
|
N.º de artículo de Mouser
511-STD5NM60-1
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 5 Amp
|
|
2,017En existencias
|
|
|
$3.41
|
|
|
$1.62
|
|
|
$1.53
|
|
|
$1.31
|
|
|
Ver
|
|
|
$1.14
|
|
|
$1.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-251-3
|
N-Channel
|
1 Channel
|
600 V
|
5 A
|
1 Ohms
|
- 30 V, 30 V
|
3 V
|
18 nC
|
- 55 C
|
+ 150 C
|
96 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
