|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 300 Volt 60 Amp Zener SuperMESH3
- STY60NK30Z
- STMicroelectronics
-
1:
$13.47
-
493En existencias
|
N.º de artículo de Mouser
511-STY60NK30Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 300 Volt 60 Amp Zener SuperMESH3
|
|
493En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
Max247-3
|
N-Channel
|
1 Channel
|
300 V
|
60 A
|
45 mOhms
|
- 30 V, 30 V
|
4.5 V
|
220 nC
|
- 55 C
|
+ 150 C
|
450 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET
- STLD200N4F6AG
- STMicroelectronics
-
1:
$4.01
-
2,251En existencias
-
NRND
|
N.º de artículo de Mouser
511-STLD200N4F6AG
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 40 V, 1.27 mOhm typ., 120 A STripFET F6 Power MOSFET
|
|
2,251En existencias
|
|
|
$4.01
|
|
|
$2.64
|
|
|
$1.92
|
|
|
$1.70
|
|
|
$1.66
|
|
|
$1.32
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.27 mOhms
|
- 20 V, 20 V
|
2 V
|
172 nC
|
- 55 C
|
+ 175 C
|
158 W
|
Enhancement
|
AEC-Q101
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
- STP11NM60FDFP
- STMicroelectronics
-
1:
$3.61
-
537En existencias
-
NRND
|
N.º de artículo de Mouser
511-STP11NM60FDFP
NRND
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 11 Amp
|
|
537En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
11 A
|
450 mOhms
|
- 30 V, 30 V
|
3 V
|
40 nC
|
- 65 C
|
+ 150 C
|
35 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
- STF18N60DM2
- STMicroelectronics
-
1:
$3.08
-
371En existencias
|
N.º de artículo de Mouser
511-STF18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220FP pack
|
|
371En existencias
|
|
|
$3.08
|
|
|
$1.99
|
|
|
$1.46
|
|
|
$1.22
|
|
|
Ver
|
|
|
$1.05
|
|
|
$1.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
13 A
|
260 mOhms
|
- 25 V, 25 V
|
3 V
|
20 nC
|
- 55 C
|
+ 150 C
|
25 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
- STF80N240K6
- STMicroelectronics
-
1:
$5.93
-
1,023En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STF80N240K6
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 197 mOhm typ., 16 A MDmesh K6 Power MOSFET
|
|
1,023En existencias
|
|
|
$5.93
|
|
|
$4.48
|
|
|
$3.62
|
|
|
$3.22
|
|
|
$2.76
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220FP-3
|
N-Channel
|
1 Channel
|
800 V
|
16 A
|
220 mOhms
|
- 30 V, 30 V
|
3.5 V
|
25.9 nC
|
- 55 C
|
+ 150 C
|
27 W
|
Enhancement
|
|
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
- STFW8N120K5
- STMicroelectronics
-
1:
$7.28
-
169En existencias
|
N.º de artículo de Mouser
511-STFW8N120K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 1200 V, 1.65 Ohm typ., 6 A MDmesh K5 Power MOSFET in a TO-3PF package
|
|
169En existencias
|
|
|
$7.28
|
|
|
$5.38
|
|
|
$4.35
|
|
|
$3.86
|
|
|
$3.31
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-3PF-3
|
N-Channel
|
1 Channel
|
1.2 kV
|
6 A
|
2 Ohms
|
- 30 V, 30 V
|
3 V
|
13.7 nC
|
- 55 C
|
+ 150 C
|
48 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
- STL4N10F7
- STMicroelectronics
-
1:
$0.98
-
923En existencias
|
N.º de artículo de Mouser
511-STL4N10F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 100 V, 0.062 Ohm typ., 4.5 A STripFET F7 Power MOSFET in a PowerFLAT 3
|
|
923En existencias
|
|
|
$0.98
|
|
|
$0.611
|
|
|
$0.398
|
|
|
$0.307
|
|
|
$0.234
|
|
|
Ver
|
|
|
$0.27
|
|
|
$0.224
|
|
|
$0.219
|
|
|
$0.217
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-3.3x3.3-8
|
N-Channel
|
1 Channel
|
100 V
|
4.5 A
|
70 mOhms
|
- 20 V, 20 V
|
4.5 V
|
7.8 nC
|
- 55 C
|
+ 150 C
|
2.9 W
|
Enhancement
|
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
- STD3N65M6
- STMicroelectronics
-
1:
$1.67
-
2,441En existencias
|
N.º de artículo de Mouser
511-STD3N65M6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 1.4 Ohm typ., 3.5 A MDmesh M6 Power MOSFET in a DPAK package
|
|
2,441En existencias
|
|
|
$1.67
|
|
|
$1.06
|
|
|
$0.705
|
|
|
$0.578
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.525
|
|
|
$0.428
|
|
|
$0.417
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
- STP16N65M2
- STMicroelectronics
-
1:
$2.83
-
251En existencias
-
1,000Se espera el 27/7/2026
|
N.º de artículo de Mouser
511-STP16N65M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
|
|
251En existencias
1,000Se espera el 27/7/2026
|
|
|
$2.83
|
|
|
$1.82
|
|
|
$1.30
|
|
|
$1.09
|
|
|
Ver
|
|
|
$0.922
|
|
|
$0.916
|
|
|
$0.902
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
360 mOhms
|
- 25 V, 25 V
|
3 V
|
19.5 nC
|
- 55 C
|
+ 150 C
|
110 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
- STHU47N60DM6AG
- STMicroelectronics
-
1:
$6.50
-
59En existencias
|
N.º de artículo de Mouser
511-STHU47N60DM6AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in
|
|
59En existencias
|
|
|
$6.50
|
|
|
$4.58
|
|
|
$3.30
|
|
|
$3.16
|
|
|
$3.05
|
|
|
$3.00
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
|
N-Channel
|
1 Channel
|
600 V
|
36 A
|
80 Ohms
|
- 25 V, 25 V
|
4.75 V
|
55 nC
|
- 55 C
|
+ 150 C
|
250 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
- STL52DN4LF7AG
- STMicroelectronics
-
1:
$1.73
-
2,805En existencias
|
N.º de artículo de Mouser
511-STL52DN4LF7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel 40 V, 9 mOhm typ., 18 A STripFET F7 Power MOSFET
|
|
2,805En existencias
|
|
|
$1.73
|
|
|
$1.10
|
|
|
$0.734
|
|
|
$0.602
|
|
|
$0.457
|
|
|
Ver
|
|
|
$0.527
|
|
|
$0.425
|
|
|
$0.418
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-4
|
N-Channel
|
2 Channel
|
40 V
|
18 A
|
16 mOhms
|
- 20 V, 20 V
|
1.5 V
|
9.4 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
- STL64DN4F7AG
- STMicroelectronics
-
1:
$2.16
-
654En existencias
|
N.º de artículo de Mouser
511-STL64DN4F7AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade dual N-channel, 40 V, 7.0 mOhm typ., 40 A, STripFET F7 Power M
|
|
654En existencias
|
|
|
$2.16
|
|
|
$1.39
|
|
|
$0.957
|
|
|
$0.811
|
|
|
$0.59
|
|
|
Ver
|
|
|
$0.678
|
|
|
$0.563
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
- STB12N60DM2AG
- STMicroelectronics
-
1:
$3.37
-
227En existencias
|
N.º de artículo de Mouser
511-STB12N60DM2AG
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in
|
|
227En existencias
|
|
|
$3.37
|
|
|
$2.19
|
|
|
$1.68
|
|
|
$1.40
|
|
|
$1.14
|
|
|
$1.13
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
10 A
|
430 mOhms
|
|
5 V
|
14.5 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
AEC-Q101
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
- STD155N3LH6
- STMicroelectronics
-
1:
$2.36
-
363En existencias
|
N.º de artículo de Mouser
511-STD155N3LH6
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Nchannel 30 V 0.0024 Ohm80A DPAK STripFET
|
|
363En existencias
|
|
|
$2.36
|
|
|
$1.52
|
|
|
$1.03
|
|
|
$0.807
|
|
|
$0.671
|
|
|
Ver
|
|
|
$0.785
|
|
|
$0.64
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
80 A
|
3 mOhms
|
- 20 V, 20 V
|
1 V
|
80 nC
|
- 55 C
|
+ 175 C
|
110 W
|
Enhancement
|
AEC-Q100
|
STripFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
- STO450N6F7
- STMicroelectronics
-
1:
$6.10
-
1,620En existencias
-
Nuevo producto
|
N.º de artículo de Mouser
511-STO450N6F7
Nuevo producto
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 60 V, 0.85 mOhm max., 545 A STripFET F7 Power MOSFET
|
|
1,620En existencias
|
|
|
$6.10
|
|
|
$4.24
|
|
|
$3.07
|
|
|
$3.06
|
|
|
Ver
|
|
|
$2.50
|
|
|
$2.75
|
|
|
$2.50
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-LL-8
|
N-Channel
|
1 Channel
|
60 V
|
545 A
|
850 mOhms
|
- 20 V, 20 V
|
4 V
|
300 nC
|
- 55 C
|
+ 175 C
|
454 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 7 Amp Zener SuperMESH
- STB9NK60ZT4
- STMicroelectronics
-
1:
$4.10
-
695En existencias
|
N.º de artículo de Mouser
511-STB9NK60Z
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 7 Amp Zener SuperMESH
|
|
695En existencias
|
|
|
$4.10
|
|
|
$2.70
|
|
|
$1.90
|
|
|
$1.75
|
|
|
$1.44
|
|
|
$1.40
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
600 V
|
7 A
|
950 mOhms
|
- 30 V, 30 V
|
3 V
|
53 nC
|
- 55 C
|
+ 150 C
|
125 W
|
Enhancement
|
|
SuperMESH
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.308 Ohm 11A MDmesh M5
- STD15N65M5
- STMicroelectronics
-
1:
$2.94
-
999En existencias
|
N.º de artículo de Mouser
511-STD15N65M5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 650 V 0.308 Ohm 11A MDmesh M5
|
|
999En existencias
|
|
|
$2.94
|
|
|
$1.90
|
|
|
$1.34
|
|
|
$1.11
|
|
|
$0.908
|
|
|
Ver
|
|
|
$1.01
|
|
|
$0.907
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
650 V
|
11 A
|
340 mOhms
|
- 25 V, 25 V
|
4 V
|
22 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package
- STD6N60DM2
- STMicroelectronics
-
1:
$2.04
-
2,182En existencias
|
N.º de artículo de Mouser
511-STD6N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a DPAK package
|
|
2,182En existencias
|
|
|
$2.04
|
|
|
$1.29
|
|
|
$0.866
|
|
|
$0.709
|
|
|
$0.527
|
|
|
Ver
|
|
|
$0.621
|
|
|
$0.493
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
600 V
|
3.2 A
|
1.1 Ohms
|
- 20 V, 20 V
|
3.25 V
|
6.2 nC
|
- 55 C
|
+ 150 C
|
60 W
|
Enhancement
|
|
MDmesh
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 40 Amp
- STE40NC60
- STMicroelectronics
-
1:
$39.94
-
146En existencias
|
N.º de artículo de Mouser
511-STE40NC60
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 600 Volt 40 Amp
|
|
146En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
ISOTOP-4
|
N-Channel
|
1 Channel
|
600 V
|
40 A
|
130 mOhms
|
- 30 V, 30 V
|
2 V
|
430 nC
|
- 65 C
|
+ 150 C
|
460 W
|
Enhancement
|
|
PowerMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP packa
- STF14N80K5
- STMicroelectronics
-
1:
$3.81
-
794En existencias
|
N.º de artículo de Mouser
511-STF14N80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP packa
|
|
794En existencias
|
|
|
$3.81
|
|
|
$2.47
|
|
|
$1.76
|
|
|
$1.44
|
|
|
Ver
|
|
|
$1.32
|
|
|
$1.26
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
12 A
|
445 mOhms
|
- 30 V, 30 V
|
3 V
|
22 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
- STF4LN80K5
- STMicroelectronics
-
1:
$2.29
-
1,856En existencias
|
N.º de artículo de Mouser
511-STF4LN80K5
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in a TO-220FP package
|
|
1,856En existencias
|
|
|
$2.29
|
|
|
$1.12
|
|
|
$1.01
|
|
|
$0.80
|
|
|
Ver
|
|
|
$0.706
|
|
|
$0.668
|
|
|
$0.633
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
800 V
|
3 A
|
2.1 Ohms
|
- 30 V, 30 V
|
3 V
|
3.7 nC
|
- 55 C
|
+ 150 C
|
20 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
- STL260N4F7
- STMicroelectronics
-
1:
$3.67
-
5,403En existencias
|
N.º de artículo de Mouser
511-STL260N4F7
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 40 V, 0.9 mOhm typ., 120 A, STripFET F7 Power MOSFET in a PowerFLAT 5
|
|
5,403En existencias
|
|
|
$3.67
|
|
|
$2.41
|
|
|
$1.68
|
|
|
$1.48
|
|
|
$1.25
|
|
|
Ver
|
|
|
$1.36
|
|
|
$1.20
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PowerFLAT-5x6-8
|
N-Channel
|
1 Channel
|
40 V
|
120 A
|
1.1 mOhms
|
- 20 V, 20 V
|
4 V
|
72 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
- STP12N60M2
- STMicroelectronics
-
1:
$2.34
-
968En existencias
|
N.º de artículo de Mouser
511-STP12N60M2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.395 Ohm typ., 9 A MDmesh M2 Power MOSFET in TO-220 package
|
|
968En existencias
|
|
|
$2.34
|
|
|
$1.23
|
|
|
$1.02
|
|
|
$0.824
|
|
|
Ver
|
|
|
$0.747
|
|
|
$0.692
|
|
|
$0.646
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
9 A
|
395 mOhms
|
- 25 V, 25 V
|
2 V
|
16 nC
|
- 55 C
|
+ 150 C
|
85 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
- STP13N95K3
- STMicroelectronics
-
1:
$6.99
-
374En existencias
|
N.º de artículo de Mouser
511-STP13N95K3
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 950V SuperMESH3 Zener-Protected 10A
|
|
374En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
950 V
|
10 A
|
680 mOhms
|
- 30 V, 30 V
|
4 V
|
51 nC
|
- 55 C
|
+ 150 C
|
190 W
|
Enhancement
|
|
SuperMESH
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
- STP18N60DM2
- STMicroelectronics
-
1:
$3.17
-
1,235En existencias
|
N.º de artículo de Mouser
511-STP18N60DM2
|
STMicroelectronics
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-channel 600 V, 0.260 Ohm typ., 12 A MDmesh DM2 Power MOSFET in a TO-220 packag
|
|
1,235En existencias
|
|
|
$3.17
|
|
|
$1.68
|
|
|
$1.51
|
|
|
$1.24
|
|
|
Ver
|
|
|
$1.07
|
|
|
$1.03
|
|
|
$1.02
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-220-3
|
N-Channel
|
1 Channel
|
600 V
|
12 A
|
260 mOhms
|
- 25 V, 25 V
|
2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
90 W
|
Enhancement
|
|
MDmesh
|
Tube
|
|