|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPTC039N15NM5ATMA1
- Infineon Technologies
-
1:
$6.78
-
6,011En existencias
|
N.º de artículo de Mouser
726-TC039N15NM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
6,011En existencias
|
|
|
$6.78
|
|
|
$4.58
|
|
|
$3.38
|
|
|
$3.15
|
|
|
$3.15
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HDSOP-16
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
- IPD025N06N
- Infineon Technologies
-
1:
$3.09
-
13,751En existencias
|
N.º de artículo de Mouser
726-IPD025N06N
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
|
|
13,751En existencias
|
|
|
$3.09
|
|
|
$2.00
|
|
|
$1.47
|
|
|
$1.24
|
|
|
$1.07
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.1 V
|
83 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 74A TDSON-8
- BSC072N08NS5ATMA1
- Infineon Technologies
-
1:
$2.43
-
30,227En existencias
|
N.º de artículo de Mouser
726-BSC072N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 74A TDSON-8
|
|
30,227En existencias
|
|
|
$2.43
|
|
|
$1.57
|
|
|
$1.07
|
|
|
$0.857
|
|
|
Ver
|
|
|
$0.787
|
|
|
$0.80
|
|
|
$0.787
|
|
|
$0.787
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
74 A
|
7.2 mOhms
|
- 20 V, 20 V
|
2.2 V
|
24 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
- BSC065N06LS5ATMA1
- Infineon Technologies
-
1:
$1.98
-
79,572En existencias
|
N.º de artículo de Mouser
726-BSC065N06LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) DIFFERENTIATED MOSFETS
|
|
79,572En existencias
|
|
|
$1.98
|
|
|
$1.27
|
|
|
$0.853
|
|
|
$0.677
|
|
|
Ver
|
|
|
$0.60
|
|
|
$0.634
|
|
|
$0.624
|
|
|
$0.60
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
64 A
|
5.3 mOhms
|
- 20 V, 20 V
|
1.1 V
|
13 nC
|
- 55 C
|
+ 150 C
|
46 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 40A TDSON-8
- BSZ042N06NSATMA1
- Infineon Technologies
-
1:
$1.72
-
39,198En existencias
|
N.º de artículo de Mouser
726-BSZ042N06NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 40A TDSON-8
|
|
39,198En existencias
|
|
|
$1.72
|
|
|
$1.27
|
|
|
$0.871
|
|
|
$0.692
|
|
|
Ver
|
|
|
$0.608
|
|
|
$0.651
|
|
|
$0.617
|
|
|
$0.608
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
98 A
|
4.9 mOhms
|
- 20 V, 20 V
|
2.8 V
|
27 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LSATMA1
- Infineon Technologies
-
1:
$2.38
-
67,147En existencias
|
N.º de artículo de Mouser
726-BSC010N04LSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
67,147En existencias
|
|
|
$2.38
|
|
|
$1.53
|
|
|
$1.05
|
|
|
$0.835
|
|
|
Ver
|
|
|
$0.763
|
|
|
$0.775
|
|
|
$0.763
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
133 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ075N08NS5ATMA1
- Infineon Technologies
-
1:
$1.65
-
70,187En existencias
|
N.º de artículo de Mouser
726-BSZ075N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
70,187En existencias
|
|
|
$1.65
|
|
|
$1.16
|
|
|
$0.896
|
|
|
$0.752
|
|
|
Ver
|
|
|
$0.68
|
|
|
$0.72
|
|
|
$0.709
|
|
|
$0.68
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
8.5 mOhms
|
- 20 V, 20 V
|
3 V
|
24 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
- BSC061N08NS5ATMA1
- Infineon Technologies
-
1:
$2.54
-
11,115En existencias
|
N.º de artículo de Mouser
726-BSC061N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
|
|
11,115En existencias
|
|
|
$2.54
|
|
|
$1.64
|
|
|
$1.12
|
|
|
$0.897
|
|
|
Ver
|
|
|
$0.832
|
|
|
$0.846
|
|
|
$0.832
|
|
|
$0.832
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
82 A
|
6.1 mOhms
|
- 20 V, 20 V
|
2.2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
- IPD025N06NATMA1
- Infineon Technologies
-
1:
$3.04
-
7,506En existencias
|
N.º de artículo de Mouser
726-IPD025N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
|
|
7,506En existencias
|
|
|
$3.04
|
|
|
$1.98
|
|
|
$1.37
|
|
|
$1.15
|
|
|
$1.07
|
|
|
$1.07
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.1 V
|
83 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
- IPB026N06NATMA1
- Infineon Technologies
-
1:
$2.81
-
1,681En existencias
|
N.º de artículo de Mouser
726-IPB026N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
|
|
1,681En existencias
|
|
|
$2.81
|
|
|
$1.99
|
|
|
$1.42
|
|
|
$1.20
|
|
|
$1.12
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.1 V
|
66 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
- BSC026NE2LS5ATMA1
- Infineon Technologies
-
1:
$1.16
-
6,548En existencias
|
N.º de artículo de Mouser
726-BSC026NE2LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) LV POWER MOS
|
|
6,548En existencias
|
|
|
$1.16
|
|
|
$0.775
|
|
|
$0.558
|
|
|
$0.467
|
|
|
$0.439
|
|
|
$0.439
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
25 V
|
82 A
|
4 mOhms
|
- 16 V, 16 V
|
1.2 V
|
12 nC
|
- 55 C
|
+ 150 C
|
29 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0500NSIATMA1
- Infineon Technologies
-
1:
$2.05
-
4,735En existencias
|
N.º de artículo de Mouser
726-BSC0500NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
4,735En existencias
|
|
|
$2.05
|
|
|
$1.31
|
|
|
$0.887
|
|
|
$0.705
|
|
|
Ver
|
|
|
$0.622
|
|
|
$0.654
|
|
|
$0.622
|
|
|
$0.622
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
1.3 mOhms
|
- 20 V, 20 V
|
2 V
|
52 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPI051N15N5AKSA1
- Infineon Technologies
-
1:
$7.01
-
454En existencias
|
N.º de artículo de Mouser
726-IPI051N15N5AKSA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
454En existencias
|
|
|
$7.01
|
|
|
$5.13
|
|
|
$4.15
|
|
|
$3.26
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
Through Hole
|
TO-262-3
|
N-Channel
|
1 Channel
|
150 V
|
120 A
|
5.1 mOhms
|
- 20 V, 20 V
|
3.8 V
|
100 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Tube
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSC0502NSIATMA1
- Infineon Technologies
-
1:
$1.56
-
9,978En existencias
|
N.º de artículo de Mouser
726-BSC0502NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
9,978En existencias
|
|
|
$1.56
|
|
|
$0.987
|
|
|
$0.659
|
|
|
$0.52
|
|
|
Ver
|
|
|
$0.429
|
|
|
$0.459
|
|
|
$0.435
|
|
|
$0.429
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
26 nC
|
- 55 C
|
+ 150 C
|
43 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
- BSZ0503NSIATMA1
- Infineon Technologies
-
1:
$1.26
-
9,366En existencias
|
N.º de artículo de Mouser
726-BSZ0503NSIATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 15V-30V
|
|
9,366En existencias
|
|
|
$1.26
|
|
|
$0.79
|
|
|
$0.523
|
|
|
$0.414
|
|
|
Ver
|
|
|
$0.324
|
|
|
$0.347
|
|
|
$0.34
|
|
|
$0.324
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
30 V
|
82 A
|
3.5 mOhms
|
- 20 V, 20 V
|
2 V
|
15 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPTG039N15NM5ATMA1
- Infineon Technologies
-
1:
$6.32
-
2,482En existencias
|
N.º de artículo de Mouser
726-TG039N15NM5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
2,482En existencias
|
|
|
$6.32
|
|
|
$4.49
|
|
|
$3.30
|
|
|
$3.08
|
|
|
$3.08
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOG-8
|
N-Channel
|
1 Channel
|
150 V
|
190 A
|
3.9 mOhms
|
- 20 V, 20 V
|
3 V
|
74 nC
|
- 55 C
|
+ 175 C
|
319 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
- BSC010N04LS
- Infineon Technologies
-
1:
$2.43
-
27,420En existencias
|
N.º de artículo de Mouser
726-BSC010N04LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A TDSON-8 FL OptiMOS
|
|
27,420En existencias
|
|
|
$2.43
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.881
|
|
|
Ver
|
|
|
$0.763
|
|
|
$0.775
|
|
|
$0.763
|
|
|
$0.763
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1 mOhms
|
- 20 V, 20 V
|
1.2 V
|
95 nC
|
- 55 C
|
+ 150 C
|
139 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
- BSZ084N08NS5ATMA1
- Infineon Technologies
-
1:
$2.05
-
10,772En existencias
|
N.º de artículo de Mouser
726-BSZ084N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 40A TSDSON-8
|
|
10,772En existencias
|
|
|
$2.05
|
|
|
$1.29
|
|
|
$0.887
|
|
|
$0.705
|
|
|
Ver
|
|
|
$0.622
|
|
|
$0.654
|
|
|
$0.622
|
|
|
$0.622
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
40 A
|
11.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
20 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
- IAUC41N06S5L100ATMA1
- Infineon Technologies
-
1:
$1.28
-
14,785En existencias
|
N.º de artículo de Mouser
726-IAUC41N06S5L100A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_)40V 60V)
|
|
14,785En existencias
|
|
|
$1.28
|
|
|
$0.807
|
|
|
$0.534
|
|
|
$0.43
|
|
|
Ver
|
|
|
$0.33
|
|
|
$0.367
|
|
|
$0.347
|
|
|
$0.33
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8-3
|
N-Channel
|
1 Channel
|
60 V
|
41 A
|
10 mOhms
|
- 16 V, 16 V
|
1.7 V
|
12.7 nC
|
- 55 C
|
+ 175 C
|
42 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSC034N06NSATMA1
- Infineon Technologies
-
1:
$2.57
-
13,551En existencias
|
N.º de artículo de Mouser
726-BSC034N06NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
13,551En existencias
|
|
|
$2.57
|
|
|
$1.66
|
|
|
$1.14
|
|
|
$0.913
|
|
|
Ver
|
|
|
$0.849
|
|
|
$0.863
|
|
|
$0.849
|
|
|
$0.849
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.4 mOhms
|
- 20 V, 20 V
|
2.1 V
|
33 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
- IPB031N08N5
- Infineon Technologies
-
1:
$3.86
-
1,376En existencias
|
N.º de artículo de Mouser
726-IPB031N08N5
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 120A D2PAK-2
|
|
1,376En existencias
|
|
|
$3.86
|
|
|
$2.53
|
|
|
$1.86
|
|
|
$1.66
|
|
|
$1.47
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
80 V
|
120 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- BSZ099N06LS5ATMA1
- Infineon Technologies
-
1:
$1.37
-
26,564En existencias
|
N.º de artículo de Mouser
726-BSZ099N06LS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
26,564En existencias
|
|
|
$1.37
|
|
|
$0.849
|
|
|
$0.57
|
|
|
$0.445
|
|
|
Ver
|
|
|
$0.354
|
|
|
$0.379
|
|
|
$0.373
|
|
|
$0.354
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
40 A
|
9.9 mOhms
|
- 20 V, 20 V
|
1.1 V
|
6.9 nC
|
- 55 C
|
+ 150 C
|
36 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
- BSZ028N04LS
- Infineon Technologies
-
1:
$1.53
-
1,850En existencias
|
N.º de artículo de Mouser
726-BSZ028N04LS
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 40V
|
|
1,850En existencias
|
|
|
$1.53
|
|
|
$0.963
|
|
|
$0.639
|
|
|
$0.505
|
|
|
Ver
|
|
|
$0.401
|
|
|
$0.455
|
|
|
$0.417
|
|
|
$0.401
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
114 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2 V
|
45 nC
|
- 55 C
|
+ 150 C
|
63 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS5 power MOSFET 100 V in a PQFN 3x3
- BSZ097N10NS5
- Infineon Technologies
-
1:
$2.26
-
11,553En existencias
|
N.º de artículo de Mouser
726-BSZ097N10NS5
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) OptiMOS5 power MOSFET 100 V in a PQFN 3x3
|
|
11,553En existencias
|
|
|
$2.26
|
|
|
$1.44
|
|
|
$0.998
|
|
|
$0.846
|
|
|
$0.719
|
|
|
$0.672
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
69 A
|
13 mOhms
|
- 20 V, 20 V
|
3.8 V
|
22 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pwr transistor 100V OptiMOS 5
- BSC098N10NS5
- Infineon Technologies
-
1:
$1.98
-
22,204En existencias
|
N.º de artículo de Mouser
726-BSC098N10NS5
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) Pwr transistor 100V OptiMOS 5
|
|
22,204En existencias
|
|
|
$1.98
|
|
|
$1.26
|
|
|
$0.838
|
|
|
$0.687
|
|
|
Ver
|
|
|
$0.546
|
|
|
$0.602
|
|
|
$0.553
|
|
|
$0.546
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
100 V
|
60 A
|
9.8 mOhms
|
- 20 V, 20 V
|
2.2 V
|
22 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|