|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
- BSC061N08NS5ATMA1
- Infineon Technologies
-
1:
$2.31
-
11,215En existencias
|
N.º de artículo de Mouser
726-BSC061N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 82A TDSON-8
|
|
11,215En existencias
|
|
|
$2.31
|
|
|
$1.40
|
|
|
$1.06
|
|
|
$0.897
|
|
|
Ver
|
|
|
$0.727
|
|
|
$0.845
|
|
|
$0.782
|
|
|
$0.727
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
82 A
|
6.1 mOhms
|
- 20 V, 20 V
|
2.2 V
|
27 nC
|
- 55 C
|
+ 150 C
|
74 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 180A D2PAK-6 OptiMOS 3
- IPB036N12N3 G
- Infineon Technologies
-
1:
$6.30
-
1,310En existencias
|
N.º de artículo de Mouser
726-IPB036N12N3GXT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 120V 180A D2PAK-6 OptiMOS 3
|
|
1,310En existencias
|
|
|
$6.30
|
|
|
$4.83
|
|
|
$3.91
|
|
|
$3.47
|
|
|
$2.97
|
|
|
Ver
|
|
|
$2.96
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
120 V
|
180 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2 V
|
211 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A DPAK-2 OptiMOS-T2
- IPD100N04S4-02
- Infineon Technologies
-
1:
$2.07
-
5,324En existencias
|
N.º de artículo de Mouser
726-IPD100N04S4-02
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 100A DPAK-2 OptiMOS-T2
|
|
5,324En existencias
|
|
|
$2.07
|
|
|
$1.27
|
|
|
$1.03
|
|
|
$0.865
|
|
|
$0.699
|
|
|
Ver
|
|
|
$0.808
|
|
|
$0.696
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1.7 mOhms
|
- 20 V, 20 V
|
3 V
|
91 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD25N06S4L30ATMA2
- Infineon Technologies
-
1:
$0.41
-
34,243En existencias
|
N.º de artículo de Mouser
726-IPD25N06S4L30ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
34,243En existencias
|
|
|
$0.41
|
|
|
$0.394
|
|
|
$0.367
|
|
|
$0.353
|
|
|
$0.297
|
|
|
Ver
|
|
|
$0.344
|
|
|
$0.29
|
|
|
$0.286
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
25 A
|
30 mOhms
|
- 16 V, 16 V
|
1.7 V
|
16.3 nC
|
- 55 C
|
+ 175 C
|
29 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2 OptiMOS-T2
- IPD30N03S4L-14
- Infineon Technologies
-
1:
$1.09
-
8,752En existencias
|
N.º de artículo de Mouser
726-IPD30N03S4L-14
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2 OptiMOS-T2
|
|
8,752En existencias
|
|
|
$1.09
|
|
|
$0.684
|
|
|
$0.448
|
|
|
$0.347
|
|
|
$0.242
|
|
|
Ver
|
|
|
$0.314
|
|
|
$0.236
|
|
|
$0.227
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
30 A
|
13.6 mOhms
|
- 16 V, 16 V
|
1.5 V
|
14 nC
|
- 55 C
|
+ 175 C
|
31 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
- BSC026N08NS5ATMA1
- Infineon Technologies
-
1:
$3.81
-
6,358En existencias
|
N.º de artículo de Mouser
726-BSC026N08NS5ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 80V 100A TDSON-8
|
|
6,358En existencias
|
|
|
$3.81
|
|
|
$2.50
|
|
|
$1.78
|
|
|
$1.59
|
|
|
Ver
|
|
|
$1.29
|
|
|
$1.44
|
|
|
$1.38
|
|
|
$1.29
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
80 V
|
100 A
|
3.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
74 nC
|
- 55 C
|
+ 150 C
|
156 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
- IPB011N04L G
- Infineon Technologies
-
1:
$3.94
-
1,774En existencias
|
N.º de artículo de Mouser
726-IPB011N04LG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
|
|
1,774En existencias
|
|
|
$3.94
|
|
|
$2.58
|
|
|
$1.90
|
|
|
$1.70
|
|
|
$1.43
|
|
|
Ver
|
|
|
$1.36
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
180 A
|
800 uOhms
|
- 20 V, 20 V
|
1.2 V
|
346 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
- IPB027N10N3 G
- Infineon Technologies
-
1:
$4.96
-
5,063En existencias
|
N.º de artículo de Mouser
726-IPB027N10N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 120A D2PAK-2 OptiMOS 3
|
|
5,063En existencias
|
|
|
$4.96
|
|
|
$3.63
|
|
|
$2.94
|
|
|
$2.61
|
|
|
$2.22
|
|
|
$2.21
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
120 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2 V
|
206 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
- IPD025N06NATMA1
- Infineon Technologies
-
1:
$3.04
-
7,506En existencias
|
N.º de artículo de Mouser
726-IPD025N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 90A DPAK-2
|
|
7,506En existencias
|
|
|
$3.04
|
|
|
$1.98
|
|
|
$1.37
|
|
|
$1.15
|
|
|
Ver
|
|
|
$0.932
|
|
|
$1.05
|
|
|
$0.932
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
2.1 mOhms
|
- 20 V, 20 V
|
2.1 V
|
83 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 70A DPAK-2 OptiMOS-T2
- IPD70N03S4L-04
- Infineon Technologies
-
1:
$1.54
-
9,365En existencias
|
N.º de artículo de Mouser
726-IPD70N03S4L-04
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 70A DPAK-2 OptiMOS-T2
|
|
9,365En existencias
|
|
|
$1.54
|
|
|
$0.965
|
|
|
$0.641
|
|
|
$0.506
|
|
|
$0.417
|
|
|
Ver
|
|
|
$0.456
|
|
|
$0.377
|
|
|
$0.365
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
70 A
|
3.6 mOhms
|
- 16 V, 16 V
|
1 V
|
48 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
- IPD90N04S4L-04
- Infineon Technologies
-
1:
$1.61
-
4,444En existencias
|
N.º de artículo de Mouser
726-IPD90N04S4L-04
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
|
4,444En existencias
|
|
|
$1.61
|
|
|
$1.01
|
|
|
$0.67
|
|
|
$0.529
|
|
|
$0.436
|
|
|
Ver
|
|
|
$0.477
|
|
|
$0.394
|
|
|
$0.381
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
3.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
60 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
- BSC054N04NSGATMA1
- Infineon Technologies
-
1:
$1.24
-
53,900En existencias
-
NRND
|
N.º de artículo de Mouser
726-BSC054N04NSGATMA
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 81A TDSON-8 OptiMOS 3
|
|
53,900En existencias
|
|
|
$1.24
|
|
|
$0.777
|
|
|
$0.512
|
|
|
$0.398
|
|
|
$0.28
|
|
|
Ver
|
|
|
$0.331
|
|
|
$0.33
|
|
|
$0.27
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
81 A
|
4.5 mOhms
|
- 20 V, 20 V
|
2 V
|
34 nC
|
- 55 C
|
+ 150 C
|
57 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TISON-8
- BSC0925ND
- Infineon Technologies
-
1:
$1.29
-
7,001En existencias
|
N.º de artículo de Mouser
726-BSC0925ND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 40A TISON-8
|
|
7,001En existencias
|
|
|
$1.29
|
|
|
$0.817
|
|
|
$0.54
|
|
|
$0.442
|
|
|
$0.303
|
|
|
Ver
|
|
|
$0.376
|
|
|
$0.351
|
|
|
$0.292
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
4.2 mOhms, 4.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
17 nC
|
- 55 C
|
+ 150 C
|
30 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
- IPB026N06NATMA1
- Infineon Technologies
-
1:
$3.14
-
1,682En existencias
|
N.º de artículo de Mouser
726-IPB026N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A D2PAK-2
|
|
1,682En existencias
|
|
|
$3.14
|
|
|
$2.05
|
|
|
$1.42
|
|
|
$1.20
|
|
|
$1.01
|
|
|
Ver
|
|
|
$0.976
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
2.3 mOhms
|
- 20 V, 20 V
|
2.1 V
|
66 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
- IPD90N04S4-03
- Infineon Technologies
-
1:
$1.92
-
5,487En existencias
|
N.º de artículo de Mouser
726-IPD90N04S4-03
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 90A DPAK-2 OptiMOS-T2
|
|
5,487En existencias
|
|
|
$1.92
|
|
|
$1.21
|
|
|
$0.813
|
|
|
$0.666
|
|
|
$0.536
|
|
|
Ver
|
|
|
$0.583
|
|
|
$0.486
|
|
|
$0.481
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
90 A
|
2.7 mOhms
|
- 20 V, 20 V
|
2 V
|
66 nC
|
- 55 C
|
+ 175 C
|
94 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD90N06S405ATMA2
- Infineon Technologies
-
1:
$2.19
-
13,891En existencias
|
N.º de artículo de Mouser
726-IPD90N06S405ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
13,891En existencias
|
|
|
$2.19
|
|
|
$1.40
|
|
|
$0.949
|
|
|
$0.756
|
|
|
$0.609
|
|
|
Ver
|
|
|
$0.712
|
|
|
$0.593
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
5.1 mOhms
|
- 20 V, 20 V
|
3 V
|
81 nC
|
- 55 C
|
+ 175 C
|
107 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V 50A DPAK-4 OptiMOS P
- SPD50P03L G
- Infineon Technologies
-
1:
$3.16
-
2,451En existencias
|
N.º de artículo de Mouser
726-SPD50P03LG
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch -30V 50A DPAK-4 OptiMOS P
|
|
2,451En existencias
|
|
|
$3.16
|
|
|
$2.05
|
|
|
$1.51
|
|
|
$1.26
|
|
|
$1.10
|
|
|
$1.01
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
30 V
|
50 A
|
5.7 mOhms
|
- 20 V, 20 V
|
2 V
|
126 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPD90N06S404ATMA2
- Infineon Technologies
-
1:
$2.64
-
1,848En existencias
|
N.º de artículo de Mouser
726-IPD90N06S404ATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
1,848En existencias
|
|
|
$2.64
|
|
|
$1.70
|
|
|
$1.18
|
|
|
$0.948
|
|
|
Ver
|
|
|
$0.774
|
|
|
$0.876
|
|
|
$0.774
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
3.8 mOhms
|
- 20 V, 20 V
|
3 V
|
128 nC
|
- 55 C
|
+ 175 C
|
150 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V,30V 40A,40A TISON-8
- BSC0924NDI
- Infineon Technologies
-
1:
$1.55
-
4,168En existencias
|
N.º de artículo de Mouser
726-BSC0924NDI
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V,30V 40A,40A TISON-8
|
|
4,168En existencias
|
|
|
$1.55
|
|
|
$0.722
|
|
|
$0.459
|
|
|
$0.384
|
|
|
$0.383
|
|
|
$0.368
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TISON-8
|
N-Channel
|
2 Channel
|
30 V
|
40 A
|
3.8 mOhms, 2.8 mOhms
|
- 20 V, 20 V
|
1.2 V
|
10 nC, 12.8 nC
|
- 55 C
|
+ 150 C
|
2.5 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
- IPB011N04LGATMA1
- Infineon Technologies
-
1:
$3.89
-
2,000En existencias
|
N.º de artículo de Mouser
726-IPB011N04LGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS 3
|
|
2,000En existencias
|
|
|
$3.89
|
|
|
$2.56
|
|
|
$1.80
|
|
|
$1.60
|
|
|
$1.32
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
180 A
|
800 uOhms
|
- 20 V, 20 V
|
1.2 V
|
346 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6 OptiMOS 3
- IPB016N06L3 G
- Infineon Technologies
-
1:
$4.84
-
1,779En existencias
|
N.º de artículo de Mouser
726-IPB016N06L3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 180A D2PAK-6 OptiMOS 3
|
|
1,779En existencias
|
|
|
$4.84
|
|
|
$3.20
|
|
|
$2.51
|
|
|
$2.23
|
|
|
$1.89
|
|
|
Ver
|
|
|
$1.79
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
60 V
|
180 A
|
1.2 mOhms
|
- 20 V, 20 V
|
1.2 V
|
166 nC
|
- 55 C
|
+ 175 C
|
250 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
- IPB090N06N3 G
- Infineon Technologies
-
1:
$1.85
-
4,077En existencias
|
N.º de artículo de Mouser
726-IPB090N06N3G
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 50A D2PAK-2 OptiMOS 3
|
|
4,077En existencias
|
|
|
$1.85
|
|
|
$1.18
|
|
|
$0.791
|
|
|
$0.632
|
|
|
$0.555
|
|
|
Ver
|
|
|
$0.49
|
|
|
$0.464
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
60 V
|
50 A
|
9 mOhms
|
- 20 V, 20 V
|
3 V
|
36 nC
|
- 55 C
|
+ 175 C
|
71 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS-T2
- IPB180N04S4-01
- Infineon Technologies
-
1:
$3.65
-
9,397En existencias
|
N.º de artículo de Mouser
726-IPB180N04S4-01
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 180A D2PAK-6 OptiMOS-T2
|
|
9,397En existencias
|
|
|
$3.65
|
|
|
$2.39
|
|
|
$1.67
|
|
|
$1.47
|
|
|
$1.24
|
|
|
Ver
|
|
|
$1.19
|
|
|
$1.18
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
40 V
|
180 A
|
1.3 mOhms
|
- 20 V, 20 V
|
3 V
|
135 nC
|
- 55 C
|
+ 175 C
|
188 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2
- IPD135N03LGATMA1
- Infineon Technologies
-
1:
$0.48
-
19,533En existencias
|
N.º de artículo de Mouser
726-IPD135N03LGATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 30V 30A DPAK-2
|
|
19,533En existencias
|
|
|
$0.48
|
|
|
$0.348
|
|
|
$0.328
|
|
|
$0.28
|
|
|
$0.186
|
|
|
Ver
|
|
|
$0.253
|
|
|
$0.18
|
|
|
$0.174
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
30 V
|
30 A
|
13.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
6.4 nC
|
- 55 C
|
+ 175 C
|
31 W
|
Enhancement
|
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
- IPD30N08S2L-21
- Infineon Technologies
-
1:
$2.50
-
18,036En existencias
|
N.º de artículo de Mouser
726-IPD30N08S2L-21
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 75V 30A DPAK-2 OptiMOS
|
|
18,036En existencias
|
|
|
$2.50
|
|
|
$1.60
|
|
|
$1.09
|
|
|
$0.908
|
|
|
$0.739
|
|
|
Ver
|
|
|
$0.799
|
|
|
$0.714
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
75 V
|
30 A
|
20.5 mOhms
|
- 20 V, 20 V
|
1.2 V
|
56 nC
|
- 55 C
|
+ 175 C
|
136 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|