DC-DC Power Module MOSFETs

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (USD) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package / Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
onsemi MOSFETs Automotive Power Module, H-Bridge in APM16 Series for LLC and Phaseshifted DC-DC
Datasheet
67In Stock
Min.: 1
Mult.: 1

Si Through Hole APMCA-16 N-Channel 4 Channel 650 V 26 A 82 mOhms - 20 V, 20 V 5 V 79.7 nC - 40 C + 125 C 126 W Enhancement Tube
onsemi MOSFETs Automotive Power Module, H-Bridge in APM16 Series for LLC and Phaseshifted DC-DC
Datasheet
132In Stock
Min.: 1
Mult.: 1

Si Through Hole APMCA-16 N-Channel 4 Channel 650 V 26 A 82 mOhms - 20 V, 20 V 5 V 79.7 nC - 40 C + 125 C 126 W Enhancement Tube
onsemi MOSFETs Automotive Power Module, H-Bridge in APM16 Series for LLC and Phaseshifted DC-DC
Datasheet
288Factory Stock Available
More Info Available
Min.: 1
Mult.: 1

Si Through Hole APMCA-16 N-Channel 4 Channel 650 V 26 A 82 mOhms - 20 V, 20 V 5 V 79.7 nC - 40 C + 125 C 126 W Enhancement Tube
onsemi MOSFETs Automotive Power Module, H-Bridge in APM16 Series for LLC and Phaseshifted DC-DC
Datasheet
Non-Stocked Lead-Time 33 Weeks
Min.: 72
Mult.: 72

Si Through Hole APMCA-16 N-Channel 4 Channel 650 V 26 A 82 mOhms - 20 V, 20 V 5 V 79.7 nC - 40 C + 125 C 126 W Enhancement Tube