|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -30A -60V 68W 3950pF 0.0218
- TJ30S06M3L(T6L1,NQ
- Toshiba
-
1:
$2.27
-
5,662En existencias
|
N.º de artículo de Mouser
757-TJ30S06M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -30A -60V 68W 3950pF 0.0218
|
|
5,662En existencias
|
|
|
$2.27
|
|
|
$1.46
|
|
|
$0.992
|
|
|
$0.792
|
|
|
$0.653
|
|
|
Ver
|
|
|
$0.745
|
|
|
$0.65
|
|
|
$0.626
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
30 A
|
21.8 mOhms
|
- 20 V, 10 V
|
3 V
|
80 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -60V 100W 7760pF 0.0112
- TJ60S06M3L(T6L1,NQ
- Toshiba
-
1:
$2.95
-
563En existencias
-
2,000Se espera el 10/4/2026
|
N.º de artículo de Mouser
757-TJ60S06M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -60V 100W 7760pF 0.0112
|
|
563En existencias
2,000Se espera el 10/4/2026
|
|
|
$2.95
|
|
|
$1.76
|
|
|
$1.29
|
|
|
$1.10
|
|
|
$0.96
|
|
|
Ver
|
|
|
$1.02
|
|
|
$0.893
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
60 A
|
11.2 mOhms
|
- 20 V, 10 V
|
2 V
|
156 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -8A -60V 27W 890pF 0.104
- TJ8S06M3L(T6L1,NQ)
- Toshiba
-
1:
$1.80
-
2,565En existencias
|
N.º de artículo de Mouser
757-TJ8S06M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -8A -60V 27W 890pF 0.104
|
|
2,565En existencias
|
|
|
$1.80
|
|
|
$1.15
|
|
|
$0.769
|
|
|
$0.608
|
|
|
$0.496
|
|
|
Ver
|
|
|
$0.556
|
|
|
$0.453
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
8 A
|
104 mOhms
|
- 20 V, 10 V
|
2 V
|
19 nC
|
- 55 C
|
+ 175 C
|
27 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 60V 3.3m max(VGS=10V) DPAK
- TK90S06N1L,LQ
- Toshiba
-
1:
$2.91
-
218En existencias
-
2,000Se espera el 2/3/2026
|
N.º de artículo de Mouser
757-TK90S06N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 60V 3.3m max(VGS=10V) DPAK
|
|
218En existencias
2,000Se espera el 2/3/2026
|
|
|
$2.91
|
|
|
$1.90
|
|
|
$1.32
|
|
|
$1.10
|
|
|
$0.893
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
5.2 mOhms
|
- 20 V, 20 V
|
1.5 V
|
81 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
