|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -40A -40V 68W 4140pF 0.0091
- TJ40S04M3L(T6L1,NQ
- Toshiba
-
1:
$1.51
-
4,317En existencias
|
N.º de artículo de Mouser
757-TJ40S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -40A -40V 68W 4140pF 0.0091
|
|
4,317En existencias
|
|
|
$1.51
|
|
|
$1.25
|
|
|
$0.894
|
|
|
$0.758
|
|
|
$0.642
|
|
|
Ver
|
|
|
$0.744
|
|
|
$0.618
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
40 A
|
9.1 mOhms
|
- 20 V, 10 V
|
3 V
|
83 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
- TJ60S04M3L(T6L1,NQ
- Toshiba
-
1:
$1.68
-
1,307En existencias
|
N.º de artículo de Mouser
757-TJ60S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
|
|
1,307En existencias
|
|
|
$1.68
|
|
|
$1.24
|
|
|
$0.838
|
|
|
$0.664
|
|
|
$0.544
|
|
|
Ver
|
|
|
$0.609
|
|
|
$0.506
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
60 A
|
6.3 mOhms
|
- 20 V, 10 V
|
3 V
|
125 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 4.3m max(VGS=10V) DPAK
- TK65S04N1L,LQ
- Toshiba
-
1:
$2.73
-
100En existencias
|
N.º de artículo de Mouser
757-TK65S04N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 4.3m max(VGS=10V) DPAK
|
|
100En existencias
|
|
|
$2.73
|
|
|
$1.77
|
|
|
$1.22
|
|
|
$0.986
|
|
|
$0.973
|
|
|
$0.805
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
65 A
|
3.3 mOhms
|
- 20 V, 20 V
|
2.5 V
|
39 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
- TJ80S04M3L(T6L1,NQ
- Toshiba
-
2,000:
$0.496
-
Plazo de entrega no en existencias 20 Semanas
|
N.º de artículo de Mouser
757-TJ80S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
|
|
Plazo de entrega no en existencias 20 Semanas
|
|
|
$0.496
|
|
|
$0.453
|
|
Min.: 2,000
Mult.: 2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
80 A
|
5.2 mOhms
|
|
|
|
|
|
100 W
|
|
AEC-Q100
|
U-MOSVI
|
Reel
|
|
