|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V StrongIRFET Power Mosfet
- IRFH7545TRPBF
- Infineon Technologies
-
1:
$1.87
-
3,402En existencias
|
N.º de artículo de Mouser
942-IRFH7545TRPBF
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) 60V StrongIRFET Power Mosfet
|
|
3,402En existencias
|
|
|
$1.87
|
|
|
$1.02
|
|
|
$0.794
|
|
|
$0.634
|
|
|
$0.482
|
|
|
Ver
|
|
|
$0.585
|
|
|
$0.553
|
|
|
$0.478
|
|
|
$0.47
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
PQFN-8
|
N-Channel
|
1 Channel
|
60 V
|
85 A
|
6 mOhms
|
- 20 V, 20 V
|
3.7 V
|
73 nC
|
- 55 C
|
+ 150 C
|
83 W
|
Enhancement
|
StrongIRFET
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
- IPT029N08N5ATMA1
- Infineon Technologies
-
1:
$4.76
-
2,157En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPT029N08N5ATMA1
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MV POWER MOS
|
|
2,157En existencias
|
|
|
$4.76
|
|
|
$3.17
|
|
|
$3.16
|
|
|
$2.26
|
|
|
$1.85
|
|
|
Ver
|
|
|
$2.25
|
|
|
$1.87
|
|
|
$1.86
|
|
|
$1.78
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
80 V
|
169 A
|
2.9 mOhms
|
- 20 V, 20 V
|
2.2 V
|
87 nC
|
- 55 C
|
+ 175 C
|
167 W
|
Enhancement
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 180A D2PAK-2
- IPB017N10N5ATMA1
- Infineon Technologies
-
1:
$6.14
-
26,687En existencias
|
N.º de artículo de Mouser
726-IPB017N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 180A D2PAK-2
|
|
26,687En existencias
|
|
|
$6.14
|
|
|
$3.92
|
|
|
$3.17
|
|
|
$3.06
|
|
|
$2.61
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
100 V
|
180 A
|
1.7 mOhms
|
- 20 V, 20 V
|
2.2 V
|
168 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
- IPT007N06NATMA1
- Infineon Technologies
-
1:
$6.59
-
9,219En existencias
|
N.º de artículo de Mouser
726-IPT007N06NATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET 60V
|
|
9,219En existencias
|
|
|
$6.59
|
|
|
$4.60
|
|
|
$3.53
|
|
|
$3.49
|
|
|
$2.90
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
60 V
|
300 A
|
750 uOhms
|
- 20 V, 20 V
|
2.1 V
|
216 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 300A HSOF-8
- IPT015N10N5ATMA1
- Infineon Technologies
-
1:
$4.77
-
12,607En existencias
-
8,000Se espera el 2/3/2026
|
N.º de artículo de Mouser
726-IPT015N10N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 300A HSOF-8
|
|
12,607En existencias
8,000Se espera el 2/3/2026
|
|
|
$4.77
|
|
|
$3.48
|
|
|
$2.58
|
|
|
$2.41
|
|
|
$2.03
|
|
|
Ver
|
|
|
$2.29
|
|
|
$2.02
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
HSOF-8
|
N-Channel
|
1 Channel
|
100 V
|
300 A
|
1.5 mOhms
|
- 20 V, 20 V
|
2.2 V
|
169 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 60V 293A 2.1mOhm 200nC Qg
- IRFS3006TRL7PP
- Infineon Technologies
-
1:
$5.10
-
1,243En existencias
-
NRND
|
N.º de artículo de Mouser
942-IRFS3006TRL7PP
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFT 60V 293A 2.1mOhm 200nC Qg
|
|
1,243En existencias
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TO-263-7
|
N-Channel
|
1 Channel
|
60 V
|
293 A
|
1.5 mOhms
|
- 20 V, 20 V
|
1.8 V
|
200 nC
|
- 55 C
|
+ 175 C
|
375 W
|
Enhancement
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
- IPB048N15N5ATMA1
- Infineon Technologies
-
1:
$5.14
-
1,070En existencias
|
N.º de artículo de Mouser
726-IPB048N15N5ATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) IFX FET >100-150V
|
|
1,070En existencias
|
|
|
$5.14
|
|
|
$3.61
|
|
|
$2.58
|
|
|
$2.49
|
|
|
$2.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
150 V
|
120 A
|
3.7 mOhms
|
- 20 V, 20 V
|
3 V
|
100 nC
|
- 55 C
|
+ 175 C
|
300 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8
- BSC039N06NSATMA1
- Infineon Technologies
-
1:
$2.31
-
7,285En existencias
-
5,000Se espera el 30/4/2026
|
N.º de artículo de Mouser
726-BSC039N06NSATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 60V 100A TDSON-8
|
|
7,285En existencias
5,000Se espera el 30/4/2026
|
|
|
$2.31
|
|
|
$1.48
|
|
|
$1.01
|
|
|
$0.806
|
|
|
Ver
|
|
|
$0.638
|
|
|
$0.761
|
|
|
$0.709
|
|
|
$0.638
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
1 Channel
|
60 V
|
100 A
|
3.9 mOhms
|
- 20 V, 20 V
|
2.1 V
|
27 nC
|
- 55 C
|
+ 150 C
|
69 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
- IPB042N10N3GATMA1
- Infineon Technologies
-
1:
$2.70
-
2,091En existencias
-
2,000Se espera el 6/3/2026
|
N.º de artículo de Mouser
726-IPB042N10N3GATMA
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 100V 100A D2PAK-2 OptiMOS 3
|
|
2,091En existencias
2,000Se espera el 6/3/2026
|
|
|
$2.70
|
|
|
$1.75
|
|
|
$1.20
|
|
|
$0.971
|
|
|
$0.851
|
|
|
$0.793
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
D2PAK-3 (TO-263-3)
|
N-Channel
|
1 Channel
|
100 V
|
100 A
|
4.2 mOhms
|
- 20 V, 20 V
|
2 V
|
88 nC
|
- 55 C
|
+ 175 C
|
214 W
|
Enhancement
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|