|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 2.3m max(VGS=10V) DPAK
- TK100S04N1L,LQ
- Toshiba
-
1:
$3.50
-
3,703En existencias
|
N.º de artículo de Mouser
757-TK100S04N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 2.3m max(VGS=10V) DPAK
|
|
3,703En existencias
|
|
|
$3.50
|
|
|
$2.28
|
|
|
$1.60
|
|
|
$1.39
|
|
|
$1.30
|
|
|
$1.30
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
100 A
|
1.9 mOhms
|
- 20 V, 20 V
|
2.5 V
|
76 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
- TJ60S04M3L(T6L1,NQ
- Toshiba
-
1:
$1.94
-
1,307En existencias
|
N.º de artículo de Mouser
757-TJ60S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -40V 90W 6510pF 0.0063
|
|
1,307En existencias
|
|
|
$1.94
|
|
|
$1.24
|
|
|
$0.838
|
|
|
$0.665
|
|
|
$0.609
|
|
|
$0.579
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
60 A
|
6.3 mOhms
|
- 20 V, 10 V
|
3 V
|
125 nC
|
- 55 C
|
+ 175 C
|
90 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -60V 100W 7760pF 0.0112
- TJ60S06M3L(T6L1,NQ
- Toshiba
-
1:
$2.95
-
563En existencias
-
2,000Se espera el 13/3/2026
|
N.º de artículo de Mouser
757-TJ60S06M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -60A -60V 100W 7760pF 0.0112
|
|
563En existencias
2,000Se espera el 13/3/2026
|
|
|
$2.95
|
|
|
$1.76
|
|
|
$1.29
|
|
|
$1.10
|
|
|
$1.05
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
60 V
|
60 A
|
11.2 mOhms
|
- 20 V, 10 V
|
2 V
|
156 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q100
|
U-MOSVI
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 4.3m max(VGS=10V) DPAK
- TK65S04N1L,LQ
- Toshiba
-
1:
$2.73
-
100En existencias
-
2,000Se espera el 15/6/2026
|
N.º de artículo de Mouser
757-TK65S04N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 40V 4.3m max(VGS=10V) DPAK
|
|
100En existencias
2,000Se espera el 15/6/2026
|
|
|
$2.73
|
|
|
$1.77
|
|
|
$1.22
|
|
|
$0.986
|
|
|
$0.944
|
|
|
$0.92
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
40 V
|
65 A
|
3.3 mOhms
|
- 20 V, 20 V
|
2.5 V
|
39 nC
|
- 55 C
|
+ 175 C
|
68 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 60V 3.3m max(VGS=10V) DPAK
- TK90S06N1L,LQ
- Toshiba
-
1:
$2.95
-
218En existencias
-
2,000Se espera el 13/3/2026
|
N.º de artículo de Mouser
757-TK90S06N1LLQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) UMOSVIII 60V 3.3m max(VGS=10V) DPAK
|
|
218En existencias
2,000Se espera el 13/3/2026
|
|
|
$2.95
|
|
|
$1.91
|
|
|
$1.32
|
|
|
$1.10
|
|
|
$1.05
|
|
|
$1.03
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
N-Channel
|
1 Channel
|
60 V
|
90 A
|
5.2 mOhms
|
- 20 V, 20 V
|
1.5 V
|
81 nC
|
- 55 C
|
+ 175 C
|
100 W
|
Enhancement
|
AEC-Q101
|
U-MOSVIII-H
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
- TJ80S04M3L(T6L1,NQ
- Toshiba
-
2,000:
$0.519
-
No en existencias
|
N.º de artículo de Mouser
757-TJ80S04M3LT6L1NQ
|
Toshiba
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) P-Ch MOS -80A -40V 100W 7770pF 0.0052
|
|
No en existencias
|
|
Min.: 2,000
Mult.: 2,000
|
|
|
Si
|
SMD/SMT
|
DPAK-3 (TO-252-3)
|
P-Channel
|
1 Channel
|
40 V
|
80 A
|
5.2 mOhms
|
|
|
|
|
|
100 W
|
|
AEC-Q100
|
U-MOSVI
|
Reel
|
|
