|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N04S412AATMA1
- Infineon Technologies
-
1:
$1.66
-
16,413En existencias
|
N.º de artículo de Mouser
726-IPG20N04S412AATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
16,413En existencias
|
|
|
$1.66
|
|
|
$1.05
|
|
|
$0.702
|
|
|
$0.553
|
|
|
Ver
|
|
|
$0.404
|
|
|
$0.496
|
|
|
$0.468
|
|
|
$0.404
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
20 A
|
12.2 mOhms
|
- 20 V, 20 V
|
2 V
|
18 nC
|
- 55 C
|
+ 175 C
|
41 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L-22A
- Infineon Technologies
-
1:
$2.43
-
4,857En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,857En existencias
|
|
|
$2.43
|
|
|
$1.56
|
|
|
$1.06
|
|
|
$0.882
|
|
|
Ver
|
|
|
$0.693
|
|
|
$0.776
|
|
|
$0.718
|
|
|
$0.693
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L35ATMA1
- Infineon Technologies
-
1:
$1.81
-
24,518En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L35ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
24,518En existencias
|
|
|
$1.81
|
|
|
$1.06
|
|
|
$0.792
|
|
|
$0.66
|
|
|
Ver
|
|
|
$0.502
|
|
|
$0.603
|
|
|
$0.557
|
|
|
$0.502
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
29 mOhms, 29 mOhms
|
- 16 V, 16 V
|
1.1 V
|
17.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL_55/60V
- IPG20N06S4L11AATMA1
- Infineon Technologies
-
1:
$2.38
-
2,710En existencias
|
N.º de artículo de Mouser
726-IPG20N06S4L11AAT
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-CHANNEL_55/60V
|
|
2,710En existencias
|
|
|
$2.38
|
|
|
$1.53
|
|
|
$1.05
|
|
|
$0.833
|
|
|
Ver
|
|
|
$0.665
|
|
|
$0.773
|
|
|
$0.716
|
|
|
$0.665
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
60 V
|
20 A
|
11.2 mOhms
|
- 16 V, 16 V
|
1.2 V
|
53 nC
|
- 55 C
|
+ 175 C
|
65 W
|
Enhancement
|
AEC-Q101
|
OptiMOS
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L35AATMA1
- Infineon Technologies
-
1:
$1.98
-
4,978En existencias
|
N.º de artículo de Mouser
726-20N10S4L35AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,978En existencias
|
|
|
$1.98
|
|
|
$1.26
|
|
|
$0.851
|
|
|
$0.675
|
|
|
$0.52
|
|
|
Ver
|
|
|
$0.621
|
|
|
$0.573
|
|
|
$0.517
|
|
|
Presupuesto
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
45 mOhms
|
- 16 V, 16 V
|
1.1 V
|
17.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPZ40N04S5L4R8ATMA1
- Infineon Technologies
-
1:
$0.89
-
6,519En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPZ40N04S5L4R8AT
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
6,519En existencias
|
|
|
$0.89
|
|
|
$0.609
|
|
|
$0.607
|
|
|
$0.448
|
|
|
Ver
|
|
|
$0.314
|
|
|
$0.447
|
|
|
$0.398
|
|
|
$0.339
|
|
|
$0.338
|
|
|
$0.314
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
4.8 mOhms
|
- 16 V, 16 V
|
1.6 V
|
29 nC
|
- 55 C
|
+ 175 C
|
48 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
- IPZ40N04S5L7R4ATMA1
- Infineon Technologies
-
1:
$0.51
-
10,416En existencias
-
NRND
|
N.º de artículo de Mouser
726-IPZ40N04S5L7R4AT
NRND
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(20V 40V)
|
|
10,416En existencias
|
|
|
$0.51
|
|
|
$0.429
|
|
|
$0.338
|
|
|
$0.312
|
|
|
$0.297
|
|
|
$0.261
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TSDSON-8
|
N-Channel
|
1 Channel
|
40 V
|
40 A
|
7.4 mOhms
|
- 16 V, 16 V
|
1.6 V
|
17 nC
|
- 55 C
|
+ 175 C
|
34 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
- IPG20N04S4-12
- Infineon Technologies
-
1:
$1.65
-
9,144En existencias
|
N.º de artículo de Mouser
726-IPG20N04S4-12
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) N-Ch 40V 20A TDSON-8 OptiMOS-T2
|
|
9,144En existencias
|
|
|
$1.65
|
|
|
$1.05
|
|
|
$0.697
|
|
|
$0.562
|
|
|
$0.417
|
|
|
Ver
|
|
|
$0.492
|
|
|
$0.488
|
|
|
$0.407
|
|
|
$0.405
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
40 V
|
20 A
|
12.2 mOhms
|
- 20 V, 20 V
|
3 V
|
18 nC
|
- 55 C
|
+ 175 C
|
41 W
|
Enhancement
|
AEC-Q100
|
OptiMOS
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-22
- Infineon Technologies
-
1:
$2.38
-
6,269En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
6,269En existencias
|
|
|
$2.38
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.862
|
|
|
$0.696
|
|
|
Ver
|
|
|
$0.82
|
|
|
$0.678
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L22ATMA1
- Infineon Technologies
-
1:
$2.16
-
3,054En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L22ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
3,054En existencias
|
|
|
$2.16
|
|
|
$1.33
|
|
|
$0.966
|
|
|
$0.808
|
|
|
Ver
|
|
|
$0.653
|
|
|
$0.759
|
|
|
$0.756
|
|
|
$0.653
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L22AATMA1
- Infineon Technologies
-
1:
$2.05
-
1,921En existencias
|
N.º de artículo de Mouser
726-20N10S4L22AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,921En existencias
|
|
|
$2.05
|
|
|
$1.25
|
|
|
$0.957
|
|
|
$0.818
|
|
|
$0.776
|
|
|
$0.667
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-35
- Infineon Technologies
-
1:
$1.93
-
1,583En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-35
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
1,583En existencias
|
|
|
$1.93
|
|
|
$1.24
|
|
|
$0.853
|
|
|
$0.723
|
|
|
$0.536
|
|
|
Ver
|
|
|
$0.631
|
|
|
$0.527
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
35 mOhms
|
- 16 V, 16 V
|
1.1 V
|
13.4 nC
|
- 55 C
|
+ 175 C
|
43 W
|
Enhancement
|
AEC-Q100
|
|
Reel, Cut Tape, MouseReel
|
|